KR910010219B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

Info

Publication number
KR910010219B1
KR910010219B1 KR1019880011034A KR880011034A KR910010219B1 KR 910010219 B1 KR910010219 B1 KR 910010219B1 KR 1019880011034 A KR1019880011034 A KR 1019880011034A KR 880011034 A KR880011034 A KR 880011034A KR 910010219 B1 KR910010219 B1 KR 910010219B1
Authority
KR
South Korea
Prior art keywords
wiring
semiconductor device
area
manufacturing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880011034A
Other languages
English (en)
Korean (ko)
Other versions
KR890004394A (ko
Inventor
다츠야 히로사와
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR890004394A publication Critical patent/KR890004394A/ko
Application granted granted Critical
Publication of KR910010219B1 publication Critical patent/KR910010219B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
KR1019880011034A 1987-08-31 1988-08-30 반도체장치의 제조방법 Expired KR910010219B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-216667 1987-08-31
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
KR890004394A KR890004394A (ko) 1989-04-21
KR910010219B1 true KR910010219B1 (ko) 1991-12-21

Family

ID=16692039

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011034A Expired KR910010219B1 (ko) 1987-08-31 1988-08-30 반도체장치의 제조방법

Country Status (2)

Country Link
JP (1) JPS6459832A (enExample)
KR (1) KR910010219B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
JP2742863B2 (ja) * 1993-06-28 1998-04-22 セイコーエプソン株式会社 フレキシブル回路基板の製造方法及びマスク
KR100191126B1 (ko) 1995-11-28 1999-06-15 윤덕용 비닐4-t-부톡시카르보닐옥시벤잘-비닐 알코올-비닐 아세테이트 공중합체와 비닐 4-t-부톡시카르보닐옥시벤잘-비닐 4-히드록시벤잘-비닐 알코올-비닐 아세테이트 공중합체 및 그들의 제조방법
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
TWI845296B (zh) * 2023-05-04 2024-06-11 頎邦科技股份有限公司 軟性電路板之佈線結構

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (ja) * 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR890004394A (ko) 1989-04-21
JPH0583176B2 (enExample) 1993-11-25
JPS6459832A (en) 1989-03-07

Similar Documents

Publication Publication Date Title
US4423547A (en) Method for forming dense multilevel interconnection metallurgy for semiconductor devices
US5598010A (en) Semiconductor integrated circuit device having dummy pattern effective against micro loading effect
MY118300A (en) Method of forming transistor electrodes from directionally deposited silicide
US4261772A (en) Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
US5237199A (en) Semiconductor device with interlayer insulating film covering the chip scribe lines
KR910010219B1 (ko) 반도체장치의 제조방법
US5502336A (en) Semiconductor device and manufacturing method thereof
US5298792A (en) Integrated circuit device with bi-level contact landing pads
US5525544A (en) Semiconductor device with a MOS structure and a manufacturing method thereof
US20020061614A1 (en) Method for producing circuit structures on a semiconductor substrate and semiconductor configuration with functional circuit structures and dummy circuit structures
KR950000519B1 (ko) 폴리실리콘층을 이용한 자기정렬콘택 제조방법
US6495897B1 (en) Integrated circuit having etch-resistant layer substantially covering shallow trench regions
KR100268426B1 (ko) 반도체 장치의 제조 방법
KR0183899B1 (ko) 자기 정렬 콘택 홀 형성 방법
US6287902B1 (en) Methods of forming etch inhibiting structures on field isolation regions
US6100134A (en) Method of fabricating semiconductor device
US5401673A (en) Process for the formation of contact holes in semiconductor integrated circuit
KR0153616B1 (ko) 포토레지스터 에치 백 스텝의 안정화 방법
KR100461336B1 (ko) 반도체 소자의 제조방법
KR960013633B1 (ko) 반도체 집적회로의 쉴딩 방법
KR100195236B1 (ko) 반도체 장치의 금속 배선 형성 방법
KR19980044787A (ko) 반도체 장치에서의 콘택부분 노치현상 방지방법
KR0139576B1 (ko) 반도체 소자 제조방법
KR100191779B1 (ko) 반도체 장치의 소자 분리용 트랜치
KR100406586B1 (ko) 정전기 방지 장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19941222

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19941222

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000