KR910009957A - 기판상에 알루미늄 또는 알루미늄 합금 트랙을 제공하는 방법 - Google Patents

기판상에 알루미늄 또는 알루미늄 합금 트랙을 제공하는 방법 Download PDF

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Publication number
KR910009957A
KR910009957A KR1019900017870A KR900017870A KR910009957A KR 910009957 A KR910009957 A KR 910009957A KR 1019900017870 A KR1019900017870 A KR 1019900017870A KR 900017870 A KR900017870 A KR 900017870A KR 910009957 A KR910009957 A KR 910009957A
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KR
South Korea
Prior art keywords
aluminum
etched
plasma
substrate
aluminum alloy
Prior art date
Application number
KR1019900017870A
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English (en)
Inventor
헤르마누스 빌헬무스 마리아 반델덴 마르티누스
요세푸스 빌헬무스 반 호우툼 헨드리쿠스
Original Assignee
프레데릭 얀 스미트
엔.브이, 필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 프레데릭 얀 스미트, 엔.브이, 필립스 글로아이람펜파브리켄 filed Critical 프레데릭 얀 스미트
Publication of KR910009957A publication Critical patent/KR910009957A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음

Description

기판상에 알루미늄 또는 알루미늄 합금 트랙을 제공하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (5)

  1. 본체 표면은 김광성 내식막 형태로 국소적으로 피복되어 염소 함유 플라즈마로 에칭되는 알루미늄을 포함하는 금속층을 가지며 그 에칭된 표면은 물로 세척되는, 기판상에 알루미늄 혹은 알루미늄 합금 트랙을 제공하는 방법에 있어서, 상기 에칭된 표면은 플라즈마로 에칭된후 세척되기 전에 질소 함유 플라즈마에 노출되는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 에칭된 표면은 플라즈마로 에칭된 직후 공기에 노출되지 않고 질소 함유 플라즈마에 노출되는 것을 특징으로하는 방법.
  3. 제1항 또는 제2항중 어느 한 항에 있어서, 상기 에칭된 표면은 유동질소 대기속으로 생성된 플라즈마에 노출되는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 상기 질소의 유량은 25 내지 100cm/min인 것을 특징으로 하는 방법.
  5. 염소 함유 대기내에서 알루미늄 혹은 알루미늄 합금으로 에칭된 트랙을 갖는 반도체 장치를 제조하는 방법에 있어서, 상기 트랙은 상술한 제1항 내지 제4항의 하나 또는 다수에서 청구한 방법의 사용에 의해 제공되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017870A 1989-11-07 1990-11-06 기판상에 알루미늄 또는 알루미늄 합금 트랙을 제공하는 방법 KR910009957A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8902744A NL8902744A (nl) 1989-11-07 1989-11-07 Werkwijze voor het aanbrengen van sporen uit aluminium of een aluminiumlegering op een substraat.
NL8902744 1989-11-07

Publications (1)

Publication Number Publication Date
KR910009957A true KR910009957A (ko) 1991-06-28

Family

ID=19855580

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017870A KR910009957A (ko) 1989-11-07 1990-11-06 기판상에 알루미늄 또는 알루미늄 합금 트랙을 제공하는 방법

Country Status (4)

Country Link
EP (1) EP0427327A1 (ko)
JP (1) JPH03159121A (ko)
KR (1) KR910009957A (ko)
NL (1) NL8902744A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100453956B1 (ko) * 2001-12-20 2004-10-20 동부전자 주식회사 반도체 장치의 금속 배선 제조 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
JP3191407B2 (ja) * 1991-08-29 2001-07-23 ソニー株式会社 配線形成方法
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
JPH06151382A (ja) * 1992-11-11 1994-05-31 Toshiba Corp ドライエッチング方法
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
EP0774681B1 (en) * 1995-06-05 2007-12-05 Nihon Shingo Kabushiki Kaisha Electromagnetic actuator
US6090717A (en) * 1996-03-26 2000-07-18 Lam Research Corporation High density plasma etching of metallization layer using chlorine and nitrogen
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US20020031914A1 (en) * 1999-06-18 2002-03-14 Julia S. Svirchevski Post-plasma processing wafer cleaning method and system
KR100450565B1 (ko) * 2001-12-20 2004-09-30 동부전자 주식회사 반도체 소자의 금속 배선 후처리 방법
KR100450564B1 (ko) * 2001-12-20 2004-09-30 동부전자 주식회사 반도체 소자의 금속 배선 후처리 방법
JP2019191470A (ja) * 2018-04-27 2019-10-31 東京応化工業株式会社 金属パターンを備える基板の処理方法、及び金属パターンの形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100453956B1 (ko) * 2001-12-20 2004-10-20 동부전자 주식회사 반도체 장치의 금속 배선 제조 방법

Also Published As

Publication number Publication date
EP0427327A1 (en) 1991-05-15
JPH03159121A (ja) 1991-07-09
NL8902744A (nl) 1991-06-03

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