KR910001984A - 플레이너 셀 구조를 갖는 메모리 셀 어레이 - Google Patents

플레이너 셀 구조를 갖는 메모리 셀 어레이

Info

Publication number
KR910001984A
KR910001984A KR1019900008887A KR900008887A KR910001984A KR 910001984 A KR910001984 A KR 910001984A KR 1019900008887 A KR1019900008887 A KR 1019900008887A KR 900008887 A KR900008887 A KR 900008887A KR 910001984 A KR910001984 A KR 910001984A
Authority
KR
South Korea
Prior art keywords
planar
memory cell
cell array
cell structure
array
Prior art date
Application number
KR1019900008887A
Other languages
English (en)
Other versions
KR940011807B1 (ko
Inventor
끼요하라 마사오
Original Assignee
가부시끼가이샤 리코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 리코 filed Critical 가부시끼가이샤 리코
Publication of KR910001984A publication Critical patent/KR910001984A/ko
Application granted granted Critical
Publication of KR940011807B1 publication Critical patent/KR940011807B1/ko

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
KR1019900008887A 1989-06-17 1990-06-16 플레이너 셀 구조를 갖는 메모리 셀 어레이 KR940011807B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15548189 1989-06-17
JP1-155481 1989-06-17

Publications (2)

Publication Number Publication Date
KR910001984A true KR910001984A (ko) 1991-01-31
KR940011807B1 KR940011807B1 (ko) 1994-12-26

Family

ID=15606991

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008887A KR940011807B1 (ko) 1989-06-17 1990-06-16 플레이너 셀 구조를 갖는 메모리 셀 어레이

Country Status (3)

Country Link
US (1) US5051809A (ko)
JP (1) JPH0387063A (ko)
KR (1) KR940011807B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2565213B2 (ja) * 1989-10-27 1996-12-18 ソニー株式会社 読み出し専用メモリ装置
JP2797538B2 (ja) * 1989-10-27 1998-09-17 ソニー株式会社 読み出し専用メモリ装置の製造方法
JPH05218329A (ja) * 1992-02-07 1993-08-27 Ricoh Co Ltd 半導体装置とその製造方法
JPH09293842A (ja) * 1996-04-26 1997-11-11 Ricoh Co Ltd 半導体記憶装置の製造方法
JP2000304490A (ja) 1998-12-15 2000-11-02 Calsonic Kansei Corp 熱交換器のコア部構造および熱交換器のコア部組付方法
US6372580B1 (en) * 2000-03-15 2002-04-16 Winbond Electronics Corp. Process for making mask ROM using a salicide process and mask ROM

Also Published As

Publication number Publication date
JPH0387063A (ja) 1991-04-11
US5051809A (en) 1991-09-24
KR940011807B1 (ko) 1994-12-26

Similar Documents

Publication Publication Date Title
DE59010020D1 (de) Statische Speicherzelle
DE69025215D1 (de) Elektrochemische Feststoffzelle
DE69025089T2 (de) Elektrochemische Zellen
DE344894T1 (de) Speicherzelle.
EP0300467A3 (en) Semiconductur memory device with redundant memory cell array
DE68923061D1 (de) Sonnenzelle.
KR900700416A (ko) 롬(rom) 셀 및 어레이구성
DE69223500T2 (de) Gate-Array-Basiszelle
MX163651B (es) Celda electroquimica
DE3767729D1 (de) Assoziativspeicherzelle.
NO168145C (no) Celle
FI891201A (fi) Elektrokemisk cell.
BR8807806A (pt) Celula eletroquimica
DK440289D0 (da) Braendselcelle
KR910001984A (ko) 플레이너 셀 구조를 갖는 메모리 셀 어레이
DE69132402D1 (de) Nichtflüchtige halbleitende Speicherzellmatrix
DE68910905T2 (de) Sonnenzelle.
DE3854005D1 (de) Speicherzelle.
DE69024921D1 (de) Halbleiterspeicheranordnung mit rückstellbaren Speicherzellen
DE3850048T2 (de) Speicherzellenzugriff.
DE58906904D1 (de) Elektrochemische Speicherzelle.
KR910700552A (ko) 계량된 이송도파관 및 이를 이용한 평면 어레이 안테나
DE3775379D1 (de) Nichtfluechtige speicherzellenanordnung.
FI942600A0 (fi) Sähkökemiallinen kenno
DE68905034T2 (de) Elektrochemische zellen.

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20091210

Year of fee payment: 16

EXPY Expiration of term