KR900700416A - 롬(rom) 셀 및 어레이구성 - Google Patents

롬(rom) 셀 및 어레이구성

Info

Publication number
KR900700416A
KR900700416A KR1019890701621A KR890701621A KR900700416A KR 900700416 A KR900700416 A KR 900700416A KR 1019890701621 A KR1019890701621 A KR 1019890701621A KR 890701621 A KR890701621 A KR 890701621A KR 900700416 A KR900700416 A KR 900700416A
Authority
KR
South Korea
Prior art keywords
array configuration
rom cell
rom
cell
array
Prior art date
Application number
KR1019890701621A
Other languages
English (en)
Inventor
웡 가이 리
에스 치아오 스티븐
Original Assignee
엘리트 세미컨덕터 앤드 시스템즈 인터내셔날 인코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/139,885 external-priority patent/US4888734A/en
Application filed by 엘리트 세미컨덕터 앤드 시스템즈 인터내셔날 인코포레이션 filed Critical 엘리트 세미컨덕터 앤드 시스템즈 인터내셔날 인코포레이션
Publication of KR900700416A publication Critical patent/KR900700416A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C05—FERTILISERS; MANUFACTURE THEREOF
    • C05F—ORGANIC FERTILISERS NOT COVERED BY SUBCLASSES C05B, C05C, e.g. FERTILISERS FROM WASTE OR REFUSE
    • C05F11/00—Other organic fertilisers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019890701621A 1987-12-30 1989-08-28 롬(rom) 셀 및 어레이구성 KR900700416A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/139,885 US4888734A (en) 1987-12-30 1987-12-30 EPROM/flash EEPROM cell and array configuration
US07/187,171 US4888735A (en) 1987-12-30 1988-04-28 ROM cell and array configuration
PCT/US1988/004626 WO1989006429A1 (en) 1987-12-28 1988-12-22 Rom cell and array configuration

Publications (1)

Publication Number Publication Date
KR900700416A true KR900700416A (ko) 1990-08-13

Family

ID=26837626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890701621A KR900700416A (ko) 1987-12-30 1989-08-28 롬(rom) 셀 및 어레이구성

Country Status (4)

Country Link
US (1) US4888735A (ko)
EP (1) EP0348487A1 (ko)
KR (1) KR900700416A (ko)
WO (1) WO1989006429A1 (ko)

Families Citing this family (65)

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US5175704A (en) * 1987-07-29 1992-12-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2712079B2 (ja) * 1988-02-15 1998-02-10 株式会社東芝 半導体装置
JPH0814993B2 (ja) * 1989-01-13 1996-02-14 株式会社東芝 半導体記憶装置
IT1230363B (it) * 1989-08-01 1991-10-18 Sgs Thomson Microelectronics Cella di memoria eeprom, con protezione migliorata da errori dovuti a rottura della cella.
US5177705A (en) * 1989-09-05 1993-01-05 Texas Instruments Incorporated Programming of an electrically-erasable, electrically-programmable, read-only memory array
JP2795935B2 (ja) * 1989-11-24 1998-09-10 三菱電機株式会社 最尤系列推定装置
JP2586187B2 (ja) * 1990-07-16 1997-02-26 日本電気株式会社 半導体記憶装置
US5241507A (en) * 1991-05-03 1993-08-31 Hyundai Electronics America One transistor cell flash memory assay with over-erase protection
DE69219669T2 (de) * 1991-06-07 1997-11-13 Sharp Kk Nichtflüchtiger Speicher
JPH05129561A (ja) * 1991-10-31 1993-05-25 Nippon Steel Corp 半導体記憶装置
US5289411A (en) * 1992-03-13 1994-02-22 Silicon Storage Technology, Inc. Floating gate memory array device having improved immunity to write disturbance
DE69325442T2 (de) * 1993-03-18 1999-12-16 St Microelectronics Srl Nichtflüchtige Flash-EEPROM-Speicheranordnung
EP0616333B1 (en) * 1993-03-18 1999-06-23 STMicroelectronics S.r.l. Method of biasing a nonvolatile flash-EEPROM memory array
DE69305986T2 (de) * 1993-07-29 1997-03-06 Sgs Thomson Microelectronics Schaltungsstruktur für Speichermatrix und entsprechende Herstellungsverfahren
JP3212421B2 (ja) * 1993-09-20 2001-09-25 富士通株式会社 不揮発性半導体記憶装置
US5515319A (en) * 1993-10-12 1996-05-07 Texas Instruments Incorporated Non-volatile memory cell and level shifter
JP3571749B2 (ja) * 1994-04-08 2004-09-29 株式会社ルネサスＬｓｉデザイン 不揮発性半導体記憶装置
EP0806045B1 (en) * 1995-01-26 2001-11-28 Macronix International Co., Ltd. Decoded wordline driver with positive and negative voltage modes
US5659500A (en) * 1995-09-26 1997-08-19 Texas Instruments Incorporated Nonvolatile memory array with compatible vertical source lines
US5838046A (en) * 1996-06-13 1998-11-17 Waferscale Integration Inc. Operating method for ROM array which minimizes band-to-band tunneling
AU4996697A (en) * 1996-12-20 1998-07-17 Intel Corporation Nonvolatile writeable memory with fast programming capability
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6066869A (en) 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US5914511A (en) * 1997-10-06 1999-06-22 Micron Technology, Inc. Circuit and method for a folded bit line memory using trench plate capacitor cells with body bias contacts
US6528837B2 (en) 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
US6025225A (en) 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6134175A (en) 1998-08-04 2000-10-17 Micron Technology, Inc. Memory address decode array with vertical transistors
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
US6091652A (en) * 1998-12-11 2000-07-18 Lsi Logic Corporation Testing semiconductor devices for data retention
US6542396B1 (en) * 2000-09-29 2003-04-01 Artisan Components, Inc. Method and apparatus for a dense metal programmable ROM
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
AU2003230565A1 (en) * 2003-01-29 2004-08-30 Aplus Flash Technology, Inc. A novel highly-integrated flash memory and mask rom array architecture
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US6909638B2 (en) * 2003-04-30 2005-06-21 Freescale Semiconductor, Inc. Non-volatile memory having a bias on the source electrode for HCI programming
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US6965538B1 (en) * 2004-08-03 2005-11-15 Micron Technology, Inc. Programming and evaluating through PMOS injection
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1684308A1 (en) 2005-01-19 2006-07-26 Saifun Semiconductors Ltd. Methods for preventing fixed pattern programming
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US7623367B2 (en) * 2006-10-13 2009-11-24 Agere Systems Inc. Read-only memory device and related method of design
US7684244B2 (en) * 2007-05-16 2010-03-23 Atmel Corporation High density non-volatile memory array
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
US8134870B2 (en) * 2009-06-16 2012-03-13 Atmel Corporation High-density non-volatile read-only memory arrays and related methods
US9053791B2 (en) * 2012-03-07 2015-06-09 Medtronic, Inc. Flash memory with integrated ROM memory cells
US9484110B2 (en) * 2013-07-29 2016-11-01 Qualcomm Incorporated Mask-programmed read only memory with enhanced security

Family Cites Families (4)

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US4467453A (en) * 1979-09-04 1984-08-21 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM

Also Published As

Publication number Publication date
EP0348487A1 (en) 1990-01-03
US4888735A (en) 1989-12-19
WO1989006429A1 (en) 1989-07-13

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