KR910001757A - Field separation insulating film and method of manufacturing the same, and semiconductor storage device using the field separation insulating film - Google Patents

Field separation insulating film and method of manufacturing the same, and semiconductor storage device using the field separation insulating film Download PDF

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Publication number
KR910001757A
KR910001757A KR1019890009001A KR890009001A KR910001757A KR 910001757 A KR910001757 A KR 910001757A KR 1019890009001 A KR1019890009001 A KR 1019890009001A KR 890009001 A KR890009001 A KR 890009001A KR 910001757 A KR910001757 A KR 910001757A
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South Korea
Prior art keywords
electric
insulating film
semiconductor substrate
field separation
film
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KR1019890009001A
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Korean (ko)
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KR930010056B1 (en
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도모하루 마메다니
리쓰고 쓰쓰미
이찌로우 아리모도
마사미 야마모도
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)

Abstract

내용 없음No content

Description

필드 분리절연막 및 그 제조방법과 해당 필드 분리절연막을 사용한 반도체기억장치Field separation insulating film and method of manufacturing the same, and semiconductor storage device using the field separation insulating film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 비대칭 필드(非對稱 field)분리절연막의 단면구조도1 is a cross-sectional structure diagram of an asymmetric field isolation insulating film of the present invention.

제2도는 본 발명의 비대칭 필드 분리산화막을 사용한 DRAM의 메모리셀 어레이의 부분 평면도2 is a partial plan view of a memory cell array of a DRAM using an asymmetric field isolation oxide film of the present invention.

제3도는 제2도의 절단선 Ⅲ-Ⅲ에 따른 방향으로부터의 단면구조도3 is a cross-sectional structural view from the direction according to the cutting line III-III of FIG.

Claims (4)

반도체기판상에 형성된 소자형성영역을 절연분리하는 필드분리절연막에 있어서 전기 반도체기판의 표면상에 형성한 소자간 분리용의 절연막을 부분적을 제거하고 전기 절연막에 덮인 전기 반도체기판의 표면의 일부를 노출시키는 것에 의하여 전기 반도체기판상의 소자형성영역에 접하는 한쪽측을 비교적 막의 두께를 얇게 다른쪽측을 비교적 막의 두께를 두껍게 형성한 것을 특징으로 하는 필드 분리절연막.In a field separation insulating film that insulates and separates an element formation region formed on a semiconductor substrate, an insulating film for separating elements formed on the surface of the electrical semiconductor substrate is partially removed, and a part of the surface of the electrical semiconductor substrate covered with the electrical insulating film is exposed. A field separation insulating film, characterized in that one side in contact with an element formation region on an electric semiconductor substrate is formed with a relatively thin film thickness and the other side with a relatively thick film thickness. 반도체 기판상에 형성된 필드 분리절연막에 있어서 반도체 기판상에 형성된 소자형성영역에 접하는 축을 비교적 얇게 반대측을 비교적 두껍게 형성한 것을 특징으로 하는 필드 분리절연막.A field separation insulating film formed on a semiconductor substrate, wherein the axis contacting the element formation region formed on the semiconductor substrate is formed relatively thinly on the opposite side of the field separation insulating film. 주표면을 가지는 제1도전형의 반도체 기판과 전기 반도체기판의 주표면상에 평행으로 뻗는 복수의 워드선과 전기 반도체기판의 주표면상에 전기 워드선과 직교하는 방향으로 뻗는 복수의 비트선과 전기 워드선과 전기 비트선의 교차부 부근에 형성되는 메모리 셀과 전기 메모리셀간을 절연분리하는 필드분리절연막과를 구비하고 전기 메모리셀은 전기 반도체기판의 주표면상에 절연막을 사이에 두고 형성된 게이트전극과 전기 게이트 전극에 자기 정합하는 위치관계에서 전기 반도체기판중에 형성된 1대의 불순물 영역과를 포함하는 트랜스퍼 게이트 트랜지스터와 전기 반도체기판중에 형성된 절연막과 전기 절연막의 표면상에 형성된 전극층과를 포함하는 전하축적 소자와를 포함하고 전기 메모리셀의 전기 트랜스퍼 게이트 트랜지스터와 전기 전하축적소자와는 전기 워드선의 뻗는 방향에 전기 필드 분리절연막을 사이에 두고 서로 교차하여 배열되고 전기 전하축적소자는 그 일부가 전기 필드 분리절연막의 전기 전하축적소자측에 위치하는 부분의 일부를 제거하는 것에 의하여 노출한 전기 반도체기판의 표면상에 형성되어 있는 반도체기억장치.A plurality of word lines extending in parallel on the main surface of the first conductive semiconductor substrate and the electrical semiconductor substrate having a main surface, and a plurality of bit lines and electric word lines extending in a direction orthogonal to the electric word lines on the main surface of the electric semiconductor substrate; And a field isolation insulating film for insulating isolation between the memory cell and the electric memory cell formed near the intersection of the electric bit line, the electric memory cell having a gate electrode and an electric gate electrode formed with an insulating film interposed therebetween on a main surface of the electric semiconductor substrate. And a transfer gate transistor comprising one impurity region formed in the electric semiconductor substrate in a positional relationship of self-matching therewith, an insulating film formed in the electric semiconductor substrate, and an electrode layer formed on the surface of the electric insulating film. Electrical transfer gate transistors and electrical transfer in electrical memory cells The accumulating element is arranged so as to cross each other with the electric field isolation insulating film interposed therebetween in the extending direction of the electric word line, and the electric charge accumulating element removes a part of the portion located at the electric charge storage element side of the electric field isolation insulating film. A semiconductor memory device formed on a surface of an electric semiconductor substrate exposed by 반도체기판의 주표면상에 실리콘 산화막을 형성하는 공정과 전기 실리콘 산화막상에 실리콘 질화막을 형성하는 공정과 전기 실리콘 질화막상에 레지스트를 도포하고 소정의 형상으로 패터닝하는 공정과 패터닝된 전기 레지스트를 마스크로 하고 전기 실리콘 질화막을 에칭한는 공정과 선택적으로 에칭된 전기 실리콘 질화막을 마스크로 하여 전기 실리콘 기판표면을 선택적으로 산화하여 필드 분리 절연막을 형성하는 공정과 전기 실리콘 질화막을 제거하는 공정과 전기 필드 분리절연막 및 전기 실리콘 산화막의 표면을 웨트 에칭하는 공정과 전기 웨트에칭에 의하여 새로운 표면이 노출한 전기 실리콘 산화막 및 전기 필드 분리절연막의 표면상에 레지스트를 도포하고 소정의 형상으로 패터닝하는 것에 의하여 적어도 그 일부가 필드분리절연막의 표면상의 일부분을 덮는 레지스트 마스크를 형성하는 공정과 전기 레지스트 마스크를 사용하여 에칭하고 전기 실리콘 산화막 및 전기 필드 분리절연막을 선택적으로 제거하는 것에 의하여 전기 필드 분리절연막에 덮여 있던 전기 반도체기판의 표면의 일부를 노출시키는 공정과를 구비한 필드분리절연막의 제조방법.Forming a silicon oxide film on the main surface of the semiconductor substrate; forming a silicon nitride film on the electro silicon oxide film; applying a resist on the silicon silicon film and patterning the resist into a predetermined shape; and patterning the electrical resist as a mask. And etching the electro-silicon nitride film, selectively oxidizing the surface of the electro-silicon substrate using the selectively-etched electro-silicon nitride film as a mask, forming a field-separating insulating film, removing the electro-silicon nitride film, electric-field separating insulating film, The process of wet etching the surface of the electro-silicon oxide film and applying a resist on the surfaces of the electro-silicon oxide film and the electric field separation insulating film exposed by the new wet etching and patterning to a predetermined shape at least a part of the field Separation insulation A part of the surface of the electric semiconductor substrate covered with the electric field separation insulating film is formed by the step of forming a resist mask covering a portion of the surface and etching using the electric resist mask and selectively removing the electric silicon oxide film and the electric field separation insulating film. A method of manufacturing a field separation insulating film having a step of exposing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890009001A 1988-06-28 1989-06-28 Semiconductor device using field isolation film KR930010056B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP16184088 1988-06-28
JP63-161840 1988-06-28
JP88-161840 1988-06-28
JP89-12782 1989-01-19
JP63-12782 1989-01-19
JP1278289 1989-01-19

Publications (2)

Publication Number Publication Date
KR910001757A true KR910001757A (en) 1991-01-31
KR930010056B1 KR930010056B1 (en) 1993-10-14

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