KR910000385B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR910000385B1
KR910000385B1 KR1019860004837A KR860004837A KR910000385B1 KR 910000385 B1 KR910000385 B1 KR 910000385B1 KR 1019860004837 A KR1019860004837 A KR 1019860004837A KR 860004837 A KR860004837 A KR 860004837A KR 910000385 B1 KR910000385 B1 KR 910000385B1
Authority
KR
South Korea
Prior art keywords
bit line
memory cell
circuit
latch
latch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860004837A
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English (en)
Korean (ko)
Other versions
KR870000702A (ko
Inventor
다까야스 사꾸라이
Original Assignee
가부시끼가이샤 도오시바
와타리 스기이찌로
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바, 와타리 스기이찌로 filed Critical 가부시끼가이샤 도오시바
Publication of KR870000702A publication Critical patent/KR870000702A/ko
Application granted granted Critical
Publication of KR910000385B1 publication Critical patent/KR910000385B1/ko
Expired legal-status Critical Current

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019860004837A 1985-06-19 1986-06-18 반도체장치 Expired KR910000385B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60133420A JPS61292292A (ja) 1985-06-19 1985-06-19 半導体記憶装置
JP133420 1985-06-19

Publications (2)

Publication Number Publication Date
KR870000702A KR870000702A (ko) 1987-02-20
KR910000385B1 true KR910000385B1 (ko) 1991-01-24

Family

ID=15104352

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004837A Expired KR910000385B1 (ko) 1985-06-19 1986-06-18 반도체장치

Country Status (2)

Country Link
JP (1) JPS61292292A (enrdf_load_stackoverflow)
KR (1) KR910000385B1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685357B2 (ja) * 1990-12-14 1997-12-03 株式会社東芝 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132595A (en) * 1979-04-04 1980-10-15 Nec Corp Semiconductor circuit
JPS5919291A (ja) * 1982-07-21 1984-01-31 Hitachi Ltd 半導体メモリ装置
US4630240A (en) * 1984-07-02 1986-12-16 Texas Instruments Incorporated Dynamic memory with intermediate column derode
US4658377A (en) * 1984-07-26 1987-04-14 Texas Instruments Incorporated Dynamic memory array with segmented bit lines

Also Published As

Publication number Publication date
KR870000702A (ko) 1987-02-20
JPH0513359B2 (enrdf_load_stackoverflow) 1993-02-22
JPS61292292A (ja) 1986-12-23

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