KR910000020B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR910000020B1
KR910000020B1 KR1019880001873A KR880001873A KR910000020B1 KR 910000020 B1 KR910000020 B1 KR 910000020B1 KR 1019880001873 A KR1019880001873 A KR 1019880001873A KR 880001873 A KR880001873 A KR 880001873A KR 910000020 B1 KR910000020 B1 KR 910000020B1
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KR
South Korea
Prior art keywords
film
hole
side wall
semiconductor device
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880001873A
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English (en)
Korean (ko)
Other versions
KR880010495A (ko
Inventor
도시요 이토
신이치 다카
지로 오시마
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR880010495A publication Critical patent/KR880010495A/ko
Application granted granted Critical
Publication of KR910000020B1 publication Critical patent/KR910000020B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019880001873A 1987-02-24 1988-02-23 반도체장치의 제조방법 Expired KR910000020B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-039027 1987-02-24
JP62039027A JPS63207177A (ja) 1987-02-24 1987-02-24 半導体装置の製造方法
JP62-39027 1987-02-24

Publications (2)

Publication Number Publication Date
KR880010495A KR880010495A (ko) 1988-10-10
KR910000020B1 true KR910000020B1 (ko) 1991-01-19

Family

ID=12541626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880001873A Expired KR910000020B1 (ko) 1987-02-24 1988-02-23 반도체장치의 제조방법

Country Status (3)

Country Link
US (1) US4910170A (https=)
JP (1) JPS63207177A (https=)
KR (1) KR910000020B1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4971929A (en) * 1988-06-30 1990-11-20 Microwave Modules & Devices, Inc. Method of making RF transistor employing dual metallization with self-aligned first metal
US4988632A (en) * 1990-01-02 1991-01-29 Motorola, Inc. Bipolar process using selective silicon deposition
US5045483A (en) * 1990-04-02 1991-09-03 National Semiconductor Corporation Self-aligned silicided base bipolar transistor and resistor and method of fabrication
US5342808A (en) * 1992-03-12 1994-08-30 Hewlett-Packard Company Aperture size control for etched vias and metal contacts
EP0569745A1 (de) * 1992-05-14 1993-11-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Feldeffekttransistoren mit asymmetrischer Gate-Struktur
US6040604A (en) * 1997-07-21 2000-03-21 Motorola, Inc. Semiconductor component comprising an electrostatic-discharge protection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696097A (en) * 1985-10-08 1987-09-29 Motorola, Inc. Poly-sidewall contact semiconductor device method
US4689869A (en) * 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
US4798928A (en) * 1987-03-26 1989-01-17 Foster Wheeler Energy Corporation Apparatus for tack welding a tube to a tubesheet
US4799990A (en) * 1987-04-30 1989-01-24 Ibm Corporation Method of self-aligning a trench isolation structure to an implanted well region

Also Published As

Publication number Publication date
JPH0513535B2 (https=) 1993-02-22
KR880010495A (ko) 1988-10-10
JPS63207177A (ja) 1988-08-26
US4910170A (en) 1990-03-20

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