JPS6110996B2 - - Google Patents
Info
- Publication number
- JPS6110996B2 JPS6110996B2 JP52110725A JP11072577A JPS6110996B2 JP S6110996 B2 JPS6110996 B2 JP S6110996B2 JP 52110725 A JP52110725 A JP 52110725A JP 11072577 A JP11072577 A JP 11072577A JP S6110996 B2 JPS6110996 B2 JP S6110996B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- substrate
- diffusion layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072577A JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072577A JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444483A JPS5444483A (en) | 1979-04-07 |
| JPS6110996B2 true JPS6110996B2 (https=) | 1986-04-01 |
Family
ID=14542899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11072577A Granted JPS5444483A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444483A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63223397A (ja) * | 1987-03-12 | 1988-09-16 | Tsurumi Mfg Co Ltd | 電動遠心ポンプの羽根車 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209350A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming diffusions having narrow dimensions utilizing reactive ion etching |
| US4209349A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
| US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
| US4329186A (en) * | 1979-12-20 | 1982-05-11 | Ibm Corporation | Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices |
| JPS59167067A (ja) * | 1982-12-28 | 1984-09-20 | マステク,コ−パレイシヤン | 電界効果トランジスタの製法 |
-
1977
- 1977-09-14 JP JP11072577A patent/JPS5444483A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63223397A (ja) * | 1987-03-12 | 1988-09-16 | Tsurumi Mfg Co Ltd | 電動遠心ポンプの羽根車 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5444483A (en) | 1979-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4074300A (en) | Insulated gate type field effect transistors | |
| JPH0362024B2 (https=) | ||
| US5554554A (en) | Process for fabricating two loads having different resistance levels in a common layer of polysilicon | |
| US3528168A (en) | Method of making a semiconductor device | |
| JP2553030B2 (ja) | 集積回路構造体およびその製造方法 | |
| JPH05865B2 (https=) | ||
| US5430317A (en) | Semiconductor device | |
| JPS6110996B2 (https=) | ||
| US4640000A (en) | Method of manufacturing semiconductor device | |
| KR910000020B1 (ko) | 반도체장치의 제조방법 | |
| JPS60217657A (ja) | 半導体集積回路装置の製造方法 | |
| JPS62285468A (ja) | Ldd電界効果トランジスタの製造方法 | |
| KR100272182B1 (ko) | 반도체 소자의 듀얼 게이트 전극 형성을 위한게이트폴리실리콘 식각 방법 | |
| JPS5933271B2 (ja) | 半導体装置の製造方法 | |
| JPH0481327B2 (https=) | ||
| JPS6039868A (ja) | 半導体装置の製造方法 | |
| JP3146490B2 (ja) | 半導体装置の製造方法 | |
| JPH06204241A (ja) | 電界効果トランジスタ及びその製造方法 | |
| KR930001893B1 (ko) | 씨모스 트랜지스터 제조방법 | |
| KR20010078344A (ko) | 집적된 주입 논리 셀의 반도체 장치 및 그 제조 프로세스 | |
| JPH01260857A (ja) | 半導体素子およびその製造方法 | |
| JP3507750B2 (ja) | 半導体装置の製造方法 | |
| JPS58207676A (ja) | 半導体装置の製造方法 | |
| JPH04360539A (ja) | 半導体装置の製造方法 | |
| JPS63224363A (ja) | 半導体集積回路の製造方法 |