KR900019269A - 이미지 센서로서의 포토다이오드 및 그 제조방법 - Google Patents
이미지 센서로서의 포토다이오드 및 그 제조방법 Download PDFInfo
- Publication number
- KR900019269A KR900019269A KR1019890007437A KR890007437A KR900019269A KR 900019269 A KR900019269 A KR 900019269A KR 1019890007437 A KR1019890007437 A KR 1019890007437A KR 890007437 A KR890007437 A KR 890007437A KR 900019269 A KR900019269 A KR 900019269A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- photodiode
- image sensor
- manufacturing
- depositing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 238000000151 deposition Methods 0.000 claims 5
- 239000011651 chromium Substances 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 포토다이오드 단면도.
Claims (2)
- 유리기판(G)과 그 위에 크롬층과 ITO층 및 i-a-Si : H, p-a-Si : H층을 갖는 이미지 센서로서의 포토다이오드에 있어서, ITO층과 Cr층간 부도체로서의 SiO2층과, 상기 ITO층에서 상기 i-a-Si : H층으로 인듐 침투억제를 위해 형성되는 Si3N4층을 포함하고, 상기 i-a-Si : H, p-a-Si : H층 및 Al 전극은 상기 Si3N4층상에 연이어 적층되는 것을 특징으로 하는 이미지 센서로서의 포토다이오드.
- 이미지 센서로서의 포토다이오드 제조방법에 있어서, 유리기판(G)상에 Cr을 증착, 패터닝하고 부도체인 SiO2층을 스퍼터링 증착하는 단계와, 상기 형상체상에 ITO층을 증착, 패터닝하고 Si3N4층을 증착하는 단계와, i-a-Si : H, p-a-Si : H 및 Al전극층을 연이어 증착 형성되는 단계를포함하여 형성되는 이미지 센서로서의 포토다이오드 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890007437A KR0134627B1 (ko) | 1989-05-31 | 1989-05-31 | 이미지 센서로서의 포토다이오드 및 그 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890007437A KR0134627B1 (ko) | 1989-05-31 | 1989-05-31 | 이미지 센서로서의 포토다이오드 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900019269A true KR900019269A (ko) | 1990-12-24 |
| KR0134627B1 KR0134627B1 (ko) | 1998-04-20 |
Family
ID=19286681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890007437A KR0134627B1 (ko) | 1989-05-31 | 1989-05-31 | 이미지 센서로서의 포토다이오드 및 그 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0134627B1 (ko) |
-
1989
- 1989-05-31 KR KR1019890007437A patent/KR0134627B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0134627B1 (ko) | 1998-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |