KR900017214A - 비정질실리콘 태양전지의 열처리방법 - Google Patents

비정질실리콘 태양전지의 열처리방법 Download PDF

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Publication number
KR900017214A
KR900017214A KR1019890005840A KR890005840A KR900017214A KR 900017214 A KR900017214 A KR 900017214A KR 1019890005840 A KR1019890005840 A KR 1019890005840A KR 890005840 A KR890005840 A KR 890005840A KR 900017214 A KR900017214 A KR 900017214A
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KR
South Korea
Prior art keywords
heat treatment
solar cell
amorphous silicon
treatment method
silicon solar
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KR1019890005840A
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English (en)
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KR950004594B1 (ko
Inventor
지일환
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정용문
삼성전자 주식회사
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Application filed by 정용문, 삼성전자 주식회사 filed Critical 정용문
Priority to KR1019890005840A priority Critical patent/KR950004594B1/ko
Publication of KR900017214A publication Critical patent/KR900017214A/ko
Application granted granted Critical
Publication of KR950004594B1 publication Critical patent/KR950004594B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음.

Description

비정질실리콘 태양전지의 열처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 비정질 실리콘 태양전지의 에너지 밴드 다이어그램.

Claims (2)

  1. 비정질 실리콘을 이용한 광전 변환 소자의 막질 개선을 위한 열처리 방법에 있어서, 태양전지의 양전극에 봉입전압을 상쇄시키기 위한 역바이어스 전압을 걸어준 상태에서 열처리 하는것을 특징으로 하는 비정질 실리콘 태양전지의 열처리 방법.
  2. 제1항에 있어서, 상기 역바이어스 전압은 0.5∼5.0V로 하고 60~150℃의 온도에서 30∼60분간 열처리하도록 하는 것을 특징으로 하는 비정질 실리콘 태양전지의 열처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005840A 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법 KR950004594B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

Publications (2)

Publication Number Publication Date
KR900017214A true KR900017214A (ko) 1990-11-15
KR950004594B1 KR950004594B1 (ko) 1995-05-02

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ID=19285831

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Application Number Title Priority Date Filing Date
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

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KR (1) KR950004594B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411996B1 (ko) * 2008-08-16 2014-06-26 주식회사 뉴파워 프라즈마 고효율 태양전지

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411996B1 (ko) * 2008-08-16 2014-06-26 주식회사 뉴파워 프라즈마 고효율 태양전지

Also Published As

Publication number Publication date
KR950004594B1 (ko) 1995-05-02

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