KR900017214A - 비정질실리콘 태양전지의 열처리방법 - Google Patents

비정질실리콘 태양전지의 열처리방법 Download PDF

Info

Publication number
KR900017214A
KR900017214A KR1019890005840A KR890005840A KR900017214A KR 900017214 A KR900017214 A KR 900017214A KR 1019890005840 A KR1019890005840 A KR 1019890005840A KR 890005840 A KR890005840 A KR 890005840A KR 900017214 A KR900017214 A KR 900017214A
Authority
KR
South Korea
Prior art keywords
heat treatment
solar cell
amorphous silicon
treatment method
silicon solar
Prior art date
Application number
KR1019890005840A
Other languages
English (en)
Other versions
KR950004594B1 (ko
Inventor
지일환
Original Assignee
정용문
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정용문, 삼성전자 주식회사 filed Critical 정용문
Priority to KR1019890005840A priority Critical patent/KR950004594B1/ko
Publication of KR900017214A publication Critical patent/KR900017214A/ko
Application granted granted Critical
Publication of KR950004594B1 publication Critical patent/KR950004594B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음.

Description

비정질실리콘 태양전지의 열처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 비정질 실리콘 태양전지의 에너지 밴드 다이어그램.

Claims (2)

  1. 비정질 실리콘을 이용한 광전 변환 소자의 막질 개선을 위한 열처리 방법에 있어서, 태양전지의 양전극에 봉입전압을 상쇄시키기 위한 역바이어스 전압을 걸어준 상태에서 열처리 하는것을 특징으로 하는 비정질 실리콘 태양전지의 열처리 방법.
  2. 제1항에 있어서, 상기 역바이어스 전압은 0.5∼5.0V로 하고 60~150℃의 온도에서 30∼60분간 열처리하도록 하는 것을 특징으로 하는 비정질 실리콘 태양전지의 열처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005840A 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법 KR950004594B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

Publications (2)

Publication Number Publication Date
KR900017214A true KR900017214A (ko) 1990-11-15
KR950004594B1 KR950004594B1 (ko) 1995-05-02

Family

ID=19285831

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890005840A KR950004594B1 (ko) 1989-04-29 1989-04-29 비정질실리콘 태양전지의 열처리방법

Country Status (1)

Country Link
KR (1) KR950004594B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411996B1 (ko) * 2008-08-16 2014-06-26 주식회사 뉴파워 프라즈마 고효율 태양전지

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101411996B1 (ko) * 2008-08-16 2014-06-26 주식회사 뉴파워 프라즈마 고효율 태양전지

Also Published As

Publication number Publication date
KR950004594B1 (ko) 1995-05-02

Similar Documents

Publication Publication Date Title
SE7907715L (sv) Forfarande for tillverkning av solcellskvalitetskisel
JPS5427311A (en) Solid state pickup element
IE802615L (en) Thin film transistor
ATE277425T1 (de) Solarzellensystem
IE812064L (en) Increasing the band gap in photoresponsive amorphous alloys¹and devices
KR900017214A (ko) 비정질실리콘 태양전지의 열처리방법
HK67995A (en) Inhibition of in vitro infectivity and cytopathic effect of HTLV-III/LAV by 2'3'-dideoxycytidine
ES478910A1 (es) Perfeccionamientos en interruptores con un transistor de e- fecto de campo acoplado opticamente.
JPS57104278A (en) Photoelectric converting device
IT8026379A0 (it) Dispositivo fotovoltaico, di silicio amorfo, in grado di fornire una maggior tensione a circuito aperto.
IT8083456A0 (it) Dispositivo e procedimento per lo sfruttamento dei raggi solari quale fonte energetica.
EP0358394A3 (en) Infra-red radiation modulator
ES8302363A1 (es) Metodo para preparar una aleacion amorfa fotosensible mejo- rada
FR2422117A1 (fr) Element absorbant selectivement l'energie rayonnee et capteur d'energie solaire comportant un tel element
FR2261489A1 (en) Trapping solar radiation using cylindrical mirror - to produce thermal, chemical or electrical energy
KR900002404A (ko) 반도체 웨이퍼
JPS5434687A (en) Semiconductor device
JPS5439578A (en) Field effect semiconductor device of isolation gate type
JPS5360171A (en) Electrode for silicon substrate and its production
JPS54142081A (en) Semiconductor integrated circuit
Kakkad et al. Effect of ion shower doping conditions on electrical properties of amorphous silicon and thin film transistors.
TW373341B (en) Separate absorption and multiplication avalanche photodiode
JPS5739586A (en) Photoelectric converter
JPS5677818A (en) Electromagnetic wave electric energy transducer of polarized-wave selective absorption type
KR870002371A (ko) 풍력 발전소

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020325

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee