KR900015398A - 양자웰 레이저 구조를 구비한 장치 - Google Patents

양자웰 레이저 구조를 구비한 장치 Download PDF

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KR900015398A
KR900015398A KR1019900002599A KR900002599A KR900015398A KR 900015398 A KR900015398 A KR 900015398A KR 1019900002599 A KR1019900002599 A KR 1019900002599A KR 900002599 A KR900002599 A KR 900002599A KR 900015398 A KR900015398 A KR 900015398A
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quantum well
laser structure
racing
quantum
mirror
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KR1019900002599A
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KR940004425B1 (ko
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카이 펭 훵
리 주얼 잭
레버트 맥콜 사무엘
쿠초우 타이
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죠지 에스. 인디그
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission

Abstract

내용 없음.

Description

양자웰 레이저 구조를 구비한 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 광 펌핑된 QW레이저의 정면도,
제2도는 펌핑이 전기적인 유사한 양자웰 구조의 정면도,
제3도는 상이한 전극 배치를 사용한 제2도의 것과 대안적인 장치의 설계도.

Claims (23)

  1. 양자 한정 면적의 방향으로 레이싱 하기 위한 양자웰 레이저 구조를 구비한 장치에 있어서, 상기 레이저 하나 또는 두개의 양자웰을 포함하는 활성 성분과, 두 분산 피드백 미러 사이의 반사성에 의존하는 동공을 필수적으로 구비하는 양자웰 레이저 구조를 구비한 장치.
  2. 제1항에 있어서, 상기 활성 성분은 화합물 반도체 물질의 하나 또는 두개의 양자웰을 포함하며, 상기 웰은 장벽 물질에 의해 레이싱 방항으로 묶여지는 양자웰 레이저 구조를 구비한 장치.
  3. 제2항에 있어서, 활성 물질의 적어도 한 측상의 반사성은 그 전체에서 필수적인 분산 피드백에 기인하는 양자웰 레이저 구조를 구비한 장치.
  4. 제3항에 있어서 동공 반사율은 약 99.4%보다 큰 양자웰 레이저 구조를 구비한 장치.
  5. 제4항에 있어서 동공 반사율은 약 99.7%보다 크며, 활성 성분은 단일 양자웰인 양자웰 레이저 구조를 구비한 장치.
  6. 제1항에 있어서, 상기 레이저에 부가되는 적어도 하나의 성분을 포함하는 회로를 구비하는 양자웰 레이저 구조를 구비한 장치.
  7. 제6항에 있어서, 상기 레이저의 특성을 갖는 적어도 두개의 레이저를 포함하는 양자웰 레이저 구조를 구비한 장치.
  8. 제6항에 있어서, 적어도 하나의 전자 성분을 포함하는 양자웰 레이저 구조를 구비한 장치.
  9. 제8항에 있어서, 상기 전자 성분은 상기 레이저를 레이싱 상태로 구동시키는 역할을 하는 양자웰 레이저 구조를 구비한 장치.
  10. 제8항에 있어서, 상기 전자 성분은 상기 레이저를 레이싱 상태로 구동시키는 이외의 기능을 하는 양자웰 레이저 구조를 구비한 장치.
  11. 제1항에 있어서, 웨이퍼 상기 집적회로를 구비하며, 레이싱 방향을 상기 웨이퍼의 평면이외의 방향인 양자웰 레이저 구조를 구비한 장치.
  12. 제11항에 있어서, 레이저 출력 방향을 평면에 존속하도록 변경시키는 수단이 제공된 양자웰 레이저 구조를 구비한 장치.
  13. 제1항에 있어서, 양자웰이 필수적으로 구비하는 활성 레이저 물질은 혼합물 반도체인 양자웰 레이저 구조를 구비한 장치.
  14. 제13항에 있어서, 혼합물 반도체는 III-V, II-VI, 3원, 4원 및 좀더 복잡한 관련 혼합물 반도체로 구성된 그룹으로부터 선택된 패밀리인 양자웰 레이저 구조를 구비한 장치.
  15. 제14항에 있어서, 양자웰은 120A°에 이르는 임계웰-한정 면적을 가지며, 상기 웰은 웰 내부의 여기된 캐리어를 한정시키는 장벽 물질에 의해 상기 면적의 방향으로 양측상에서 묶어지는 양자웰 레이저 구조를 구비한 장치.
  16. 제15항에 있어서, 레이싱은 광 펌핑의 결과인 양자웰 레이저 구조를 구비한 장치.
  17. 제15항에 있어서, 레이싱은 전기적 펌핑의 결과인 양자웰 레이저 구조를 구비한 장치.
  18. 제17항에 있어서, 미러는 비 균형된 반사율을 가지며, 레이싱 방출은 주로 낮은 반사율 쪽으로 되는 양자웰 레이저 구조를 구비한 장치.
  19. 제17항에 있어서, DFB미러는 고 굴절율 및 저 굴절율의 미러 물질층의 연속적인 쌍을 필수적으로 구비하는 양자웰 레이저 구조를 구비한 장치.
  20. 제19항에 있어서, 쌍으로된 미러 층은 적어도 0.1의 △n값안큼 굴절율이 상이한 양자웰 레이저 구조를 구비한 장치.
  21. 제20항에 있어서, △n은 적어도 0.2이며, 적어도 하나의 미러는 적어도 20쌍의 미러 물질을 포함하는 양자웰 레이저 구조를 구비한 장치.
  22. 제21항에 있어서, 두 미러 모두는 적어도 20쌍의 미러 물질을 포함하는 양자웰 레이저 구조를 구비한 장치.
  23. 제21항에 있어서, 활성 성분은 적어도 약 0.3의 이득을 가지며, △n은 적어도 0.3인 양자웰 레이저 구조를 구비한 장치.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019900002599A 1989-03-01 1990-02-28 양자웰 레이저 구조를 구비한 장치 KR940004425B1 (ko)

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US317699 1989-03-01
US317,699 1989-03-01
US07/317,699 US4999842A (en) 1989-03-01 1989-03-01 Quantum well vertical cavity laser

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KR900015398A true KR900015398A (ko) 1990-10-26
KR940004425B1 KR940004425B1 (ko) 1994-05-25

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US (1) US4999842A (ko)
EP (1) EP0385643A3 (ko)
JP (1) JP2572143B2 (ko)
KR (1) KR940004425B1 (ko)
CA (1) CA2008904C (ko)

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