KR900013532A - 초전도 세라믹스막 형성용 타아겟재 - Google Patents

초전도 세라믹스막 형성용 타아겟재 Download PDF

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Publication number
KR900013532A
KR900013532A KR1019890010108A KR890010108A KR900013532A KR 900013532 A KR900013532 A KR 900013532A KR 1019890010108 A KR1019890010108 A KR 1019890010108A KR 890010108 A KR890010108 A KR 890010108A KR 900013532 A KR900013532 A KR 900013532A
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KR
South Korea
Prior art keywords
target material
ceramic film
superconducting ceramic
metal
forming
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KR1019890010108A
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English (en)
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KR950011339B1 (ko
Inventor
유기히로 오오우찌
다다시 스기하라
다꾸오 다께시다
Original Assignee
나가노 다께시
미쓰비시 긴소꾸 가부시기가이샤
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Application filed by 나가노 다께시, 미쓰비시 긴소꾸 가부시기가이샤 filed Critical 나가노 다께시
Publication of KR900013532A publication Critical patent/KR900013532A/ko
Application granted granted Critical
Publication of KR950011339B1 publication Critical patent/KR950011339B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
    • H01B12/06—Films or wires on bases or cores
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/736—From free metal precursors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

내용 없음

Description

초전도 세라믹스막 형성용 타아겟재
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 실시예 4에서 제작된 타아겟(target) 재 포직의 현미경 관찰 사생도이다.

Claims (3)

  1. 금속 Cu의 소지에 Ba와 Cu의 복합산화물이 분산한 조직을 보유하며, 그 조정은, 금속 Cu; 5내지 40용량%와, 나머지가 상기 Ba와 Cu의 복합산화물로 이루어진 것을 특징으로 하는 초전도 세라믹스막 형성용 타아겟재.
  2. 금속 Cu의 소지에, Sr와 Ca와 Cu의 복합산화물이 분산한 조직을 보유하며, 그 조성은, 금속 Cu 5내지 40용량%와 나머지가 상기 Sr과 Ca와 Cu의 복합산화물로 이루어진 것을 특징으로 하는 초전도 세라믹스막 형성용 타아겟재.
  3. 금속 Cu의 소지에, Ba와 Ca와 Cu의 복합산화물이 분산한 조작을 보유하며, 그 조직은, 금속 Cu 5내지 40용량%와 나머지가 상기 Ba와 Ca와 Cu의 복합산화물로 이루어진 것을 특징으로 하는 초전도 세라믹스막 형성용 타아겟재.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010108A 1989-02-10 1989-02-10 초전도 세라믹스막 형성용 타아겟재 KR950011339B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1031911A JPH02212351A (ja) 1989-02-10 1989-02-10 超電導セラミックス膜形成用ターゲット材
JP89-31911 1989-02-10

Publications (2)

Publication Number Publication Date
KR900013532A true KR900013532A (ko) 1990-09-06
KR950011339B1 KR950011339B1 (ko) 1995-09-30

Family

ID=12344164

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010108A KR950011339B1 (ko) 1989-02-10 1989-02-10 초전도 세라믹스막 형성용 타아겟재

Country Status (4)

Country Link
US (1) US4968665A (ko)
EP (1) EP0381804A3 (ko)
JP (1) JPH02212351A (ko)
KR (1) KR950011339B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0377073A3 (en) * 1988-12-07 1990-11-07 Mitsubishi Materials Corporation Sputtering target used for forming quinary superconductive oxide
DE69118969T2 (de) * 1990-06-21 1996-11-21 Sumitomo Electric Industries Prozess und Apparat zur Herstellung supraleitender Dünnschichten
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
US5145713A (en) * 1990-12-21 1992-09-08 Bell Communications Research, Inc. Stoichiometric growth of compounds with volatile components
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
WO1993018200A1 (en) * 1992-03-13 1993-09-16 E.I. Du Pont De Nemours And Company Process for producing thin films of inorganic oxides of controlled stoichiometry
WO2000015863A1 (en) * 1998-09-11 2000-03-23 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
US6749103B1 (en) 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
JP4516199B2 (ja) 2000-09-13 2010-08-04 キヤノンアネルバ株式会社 スパッタ装置及び電子デバイス製造方法
US8158096B2 (en) * 2008-09-19 2012-04-17 The United States Of America, As Represented By The Secretary Of The Navy Barium copper sulfur fluoride transparent conductive thin films and bulk material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772349B2 (ja) * 1987-05-12 1995-08-02 住友電気工業株式会社 大面積化合物薄膜の作製方法および装置
JPS63307111A (ja) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd 導電体の製造方法
JPH0717480B2 (ja) * 1987-06-15 1995-03-01 古河電気工業株式会社 高温超伝導体膜の製造方法
JPS644466A (en) * 1987-06-26 1989-01-09 Matsushita Electric Ind Co Ltd Manufacture of thin-film superconductor
JPH01252573A (ja) * 1987-12-09 1989-10-09 Mitsubishi Metal Corp 超電導膜形成用ターゲット材

Also Published As

Publication number Publication date
EP0381804A2 (en) 1990-08-16
KR950011339B1 (ko) 1995-09-30
US4968665A (en) 1990-11-06
EP0381804A3 (en) 1990-11-07
JPH02212351A (ja) 1990-08-23

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