JPS645003A - Oxide semiconductor for thermistor - Google Patents

Oxide semiconductor for thermistor

Info

Publication number
JPS645003A
JPS645003A JP16174287A JP16174287A JPS645003A JP S645003 A JPS645003 A JP S645003A JP 16174287 A JP16174287 A JP 16174287A JP 16174287 A JP16174287 A JP 16174287A JP S645003 A JPS645003 A JP S645003A
Authority
JP
Japan
Prior art keywords
thermistor
atomic
oxide semiconductor
hfo2
zro2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16174287A
Other languages
Japanese (ja)
Inventor
Isao Shimono
Masatsune Oguro
Junji Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16174287A priority Critical patent/JPS645003A/en
Publication of JPS645003A publication Critical patent/JPS645003A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To obtain a thermistor having desired thermistor characteristics and a desired shape, by making the following conjugate: Mn-Ni-Cr system oxide semiconductor whose main component is Mn, and ZrO2 and HfO2 being high resistivity oxide. CONSTITUTION:Mn-Ni-Cr system oxide semiconductor A whose main component is Mn, and ZrO2 and HfO2 being high resistivity oxide are made conjugate. When the composition of the semiconductor A is set as 100 atomic% in all, zirconium of 0.1-24.9 atomic% and hafnium of 0.1-24.9 atomic%, whose sum is 5-25 atomic%, are contained. Then a constant B is kept nearly constant, and only resistivity is changed. Thereby, a thermistor element having. desired thermistor characteristics and a desired shape is obtained.
JP16174287A 1987-06-29 1987-06-29 Oxide semiconductor for thermistor Pending JPS645003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16174287A JPS645003A (en) 1987-06-29 1987-06-29 Oxide semiconductor for thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16174287A JPS645003A (en) 1987-06-29 1987-06-29 Oxide semiconductor for thermistor

Publications (1)

Publication Number Publication Date
JPS645003A true JPS645003A (en) 1989-01-10

Family

ID=15741021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16174287A Pending JPS645003A (en) 1987-06-29 1987-06-29 Oxide semiconductor for thermistor

Country Status (1)

Country Link
JP (1) JPS645003A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008225454A (en) * 2007-02-13 2008-09-25 Olympus Corp Laser microscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008225454A (en) * 2007-02-13 2008-09-25 Olympus Corp Laser microscope

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