JPS644466A - Manufacture of thin-film superconductor - Google Patents
Manufacture of thin-film superconductorInfo
- Publication number
- JPS644466A JPS644466A JP62159990A JP15999087A JPS644466A JP S644466 A JPS644466 A JP S644466A JP 62159990 A JP62159990 A JP 62159990A JP 15999087 A JP15999087 A JP 15999087A JP S644466 A JPS644466 A JP S644466A
- Authority
- JP
- Japan
- Prior art keywords
- sintered compact
- thin
- manufacture
- superconductor
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title abstract 4
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000013077 target material Substances 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052691 Erbium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 230000005668 Josephson effect Effects 0.000 abstract 1
- 229910052765 Lutetium Inorganic materials 0.000 abstract 1
- 229910052775 Thulium Inorganic materials 0.000 abstract 1
- 229910052769 Ytterbium Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To manufacture a thin-film superconductor having a superconductive transition temp. close to that of ceramics, by using a material prepared by further adding Cu to a rare earth-Ba-Cu-O-type sintered compact as a target material. CONSTITUTION:As a target material for sputtering, a material prepared by subjecting a sintered compact of superconductor having a composition represented by MBa2Cu3O7-x to Cu addition by using copper piece or copper powder is used. In the above composition of the sintered compact, M means one or more elements among Y, Lu, Yb, Tm, Er, Ho, Dy, Gd, and Sc. It is desirable to use a material in which fine-grained copper powder of <=1mm grain size is dispersed in the 10-30% of the sintered compact surface as a target material. By this method, thin-film superconductor devices including the devices utilizing Josephson effect can be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159990A JPS644466A (en) | 1987-06-26 | 1987-06-26 | Manufacture of thin-film superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159990A JPS644466A (en) | 1987-06-26 | 1987-06-26 | Manufacture of thin-film superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644466A true JPS644466A (en) | 1989-01-09 |
Family
ID=15705591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62159990A Pending JPS644466A (en) | 1987-06-26 | 1987-06-26 | Manufacture of thin-film superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644466A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4968665A (en) * | 1989-02-10 | 1990-11-06 | Mitsubishi Metal Corporation | Target used for formation of superconductive oxide film, process of producing thereof, and process of forming superconductive oxide film on substrate using the same |
| US5049452A (en) * | 1987-12-09 | 1991-09-17 | Mitsubishi Metal Corporation | Target member used for formation of superconducting film |
| US5077269A (en) * | 1988-12-07 | 1991-12-31 | Mitsubishi Metal Corporation | Sputtering target used for forming quinary superconductive oxide |
-
1987
- 1987-06-26 JP JP62159990A patent/JPS644466A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049452A (en) * | 1987-12-09 | 1991-09-17 | Mitsubishi Metal Corporation | Target member used for formation of superconducting film |
| US5077269A (en) * | 1988-12-07 | 1991-12-31 | Mitsubishi Metal Corporation | Sputtering target used for forming quinary superconductive oxide |
| US4968665A (en) * | 1989-02-10 | 1990-11-06 | Mitsubishi Metal Corporation | Target used for formation of superconductive oxide film, process of producing thereof, and process of forming superconductive oxide film on substrate using the same |
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