KR900011024A - BiCMOS회로 - Google Patents

BiCMOS회로 Download PDF

Info

Publication number
KR900011024A
KR900011024A KR1019890018477A KR890018477A KR900011024A KR 900011024 A KR900011024 A KR 900011024A KR 1019890018477 A KR1019890018477 A KR 1019890018477A KR 890018477 A KR890018477 A KR 890018477A KR 900011024 A KR900011024 A KR 900011024A
Authority
KR
South Korea
Prior art keywords
discharge
potential power
circuit
npn transistor
cmos gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019890018477A
Other languages
English (en)
Korean (ko)
Inventor
츠네아키 후세
사토미 나카노
도시키 세시타
고지 사쿠이
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900011024A publication Critical patent/KR900011024A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
KR1019890018477A 1988-12-13 1989-12-13 BiCMOS회로 Abandoned KR900011024A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP88-314288 1988-12-13
JP63314288A JPH02159818A (ja) 1988-12-13 1988-12-13 半導体集積回路

Publications (1)

Publication Number Publication Date
KR900011024A true KR900011024A (ko) 1990-07-11

Family

ID=18051561

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018477A Abandoned KR900011024A (ko) 1988-12-13 1989-12-13 BiCMOS회로

Country Status (4)

Country Link
US (1) US5077492A (OSRAM)
JP (1) JPH02159818A (OSRAM)
KR (1) KR900011024A (OSRAM)
DE (1) DE3940358A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355030A (en) * 1992-12-04 1994-10-11 International Business Machines Corporation Low voltage BICMOS logic switching circuit
US5332933A (en) * 1993-01-21 1994-07-26 Hewlett-Packard Company Bipolar-MOS circuits with dimensions scaled to enhance performance
JPH06326596A (ja) * 1993-03-17 1994-11-25 Fujitsu Ltd Ｂｉ−ＣＭＯＳ回路
US9755644B2 (en) * 2015-09-30 2017-09-05 Lapis Semiconductor Co., Ltd. Interface circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
DE3329874A1 (de) * 1983-08-18 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Mos-inverterschaltung
US4616146A (en) * 1984-09-04 1986-10-07 Motorola, Inc. BI-CMOS driver circuit
JPH0738583B2 (ja) * 1985-01-26 1995-04-26 株式会社東芝 半導体集積回路
JPS6362411A (ja) * 1986-09-02 1988-03-18 Nec Corp 半導体回路
JPH0611111B2 (ja) * 1987-03-27 1994-02-09 株式会社東芝 ＢｉＭＯＳ論理回路
KR920009870B1 (ko) * 1988-04-21 1992-11-02 삼성반도체통신 주식회사 Bi-CMOS 인버터 회로

Also Published As

Publication number Publication date
DE3940358A1 (de) 1990-06-21
JPH02159818A (ja) 1990-06-20
DE3940358C2 (OSRAM) 1991-08-01
US5077492A (en) 1991-12-31

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

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T11-X000 Administrative time limit extension requested

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R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

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R18-X000 Changes to party contact information recorded

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P22-X000 Classification modified

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St.27 status event code: A-3-3-R10-R18-oth-X000