KR900010958A - 마이크로 단면 가공 및 관찰 방법 - Google Patents

마이크로 단면 가공 및 관찰 방법

Info

Publication number
KR900010958A
KR900010958A KR1019890017281A KR890017281A KR900010958A KR 900010958 A KR900010958 A KR 900010958A KR 1019890017281 A KR1019890017281 A KR 1019890017281A KR 890017281 A KR890017281 A KR 890017281A KR 900010958 A KR900010958 A KR 900010958A
Authority
KR
South Korea
Prior art keywords
observation method
section processing
micro section
micro
processing
Prior art date
Application number
KR1019890017281A
Other languages
English (en)
Other versions
KR0178019B1 (ko
Inventor
다까시 가이또
다쯔야 아다찌
Original Assignee
세이꼬 덴시 고교 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이꼬 덴시 고교 가부시끼 가이샤 filed Critical 세이꼬 덴시 고교 가부시끼 가이샤
Publication of KR900010958A publication Critical patent/KR900010958A/ko
Application granted granted Critical
Publication of KR0178019B1 publication Critical patent/KR0178019B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
KR1019890017281A 1988-12-01 1989-11-28 마이크로 단면 가공 및 관찰 방법 KR0178019B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP304369 1988-12-01
JP63304369A JP2779414B2 (ja) 1988-12-01 1988-12-01 ミクロ断面の加工・観察方法

Publications (2)

Publication Number Publication Date
KR900010958A true KR900010958A (ko) 1990-07-11
KR0178019B1 KR0178019B1 (ko) 1999-03-20

Family

ID=17932194

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017281A KR0178019B1 (ko) 1988-12-01 1989-11-28 마이크로 단면 가공 및 관찰 방법

Country Status (4)

Country Link
US (1) US5028780A (ko)
JP (1) JP2779414B2 (ko)
KR (1) KR0178019B1 (ko)
GB (1) GB2227601B (ko)

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JPH087121B2 (ja) * 1990-07-18 1996-01-29 セイコー電子工業株式会社 集束荷電ビーム加工方法
JP2714727B2 (ja) * 1991-04-22 1998-02-16 シャープ株式会社 半導体装置の検査装置
JP2774884B2 (ja) * 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
US5357116A (en) * 1992-11-23 1994-10-18 Schlumberger Technologies, Inc. Focused ion beam processing with charge control
US5576542A (en) * 1993-12-08 1996-11-19 Kabushiki Kaisha Toshiba Substrate cross-section observing apparatus
JP3377314B2 (ja) * 1994-11-17 2003-02-17 住友化学工業株式会社 低臭気ポリフェニレンエーテル系樹脂組成物
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
DE19603996C2 (de) * 1996-02-05 2002-08-29 P A L M Gmbh Mikrolaser Techno Sortierverfahren für planar ausgebrachte biologische Objekte mit Laserstrahlen
WO1997029354A1 (de) * 1996-02-05 1997-08-14 Bayer Aktiengesellschaft Verfahren und vorrichtung zum sortieren und zur gewinnung von planar ausgebrachten biologischen objekten wie biologische zellen bzw. zellorganellen, histologischen schnitten, chromosomenteilchen etc. mit laserstrahlen
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
AU6675298A (en) * 1997-03-04 1998-09-22 Micrion Corporation Thin-film magnetic recording head manufacture
US5912668A (en) * 1997-05-30 1999-06-15 Sony Corporation Controlling a screen display of a group of images represented by a graphical object
US5933704A (en) * 1997-06-02 1999-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reveal the architecture of multilayer interconnectors in integrated circuits
US6332962B1 (en) 1997-06-13 2001-12-25 Micrion Corporation Thin-film magnetic recording head manufacture using selective imaging
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
JP3843671B2 (ja) 1999-10-29 2006-11-08 株式会社日立製作所 半導体デバイスパターンの検査装置及びその欠陥検査・不良解析方法
US6727500B1 (en) * 2000-02-25 2004-04-27 Fei Company System for imaging a cross-section of a substrate
KR100333522B1 (ko) * 2000-04-01 2002-04-25 이응준 초고속통신망 광단국장치용 전원감시 시스템
US6580072B1 (en) 2000-05-03 2003-06-17 Xilinx, Inc. Method for performing failure analysis on copper metallization
EP1209737B2 (en) * 2000-11-06 2014-04-30 Hitachi, Ltd. Method for specimen fabrication
JP3664987B2 (ja) * 2001-03-14 2005-06-29 シャープ株式会社 電子顕微鏡観察用試料の作成方法及び半導体装置の解析方法
JP4302933B2 (ja) * 2002-04-22 2009-07-29 株式会社日立ハイテクノロジーズ イオンビームによる穴埋め方法及びイオンビーム装置
US6683305B1 (en) 2002-10-18 2004-01-27 International Business Machines Corporation Method to obtain transparent image of resist contact hole or feature by SEM without deforming the feature by ion beam
US6958476B2 (en) * 2003-10-10 2005-10-25 Asml Netherlands B.V. Methods to improve resolution of cross sectioned features created using an ion beam
KR100558204B1 (ko) 2003-10-13 2006-03-10 삼성전자주식회사 반도체 장치 분석용 마크, 마킹 방법 및 분석용 시료 제작방법
FR2873491B1 (fr) * 2004-07-20 2006-09-22 Commissariat Energie Atomique Procede de realisation d'une structure dotee d'au moins une zone d'un ou plusieurs nanocristaux semi-conducteurs localisee avec precision
JP2006079846A (ja) * 2004-09-07 2006-03-23 Canon Inc 試料の断面評価装置及び試料の断面評価方法
JP4185062B2 (ja) * 2005-03-04 2008-11-19 エスアイアイ・ナノテクノロジー株式会社 加工用ステージ及び集束ビーム加工装置並びに集束ビーム加工方法
US8227753B2 (en) * 2008-07-15 2012-07-24 Carl Zeiss Nts, Llc Multiple current charged particle methods
JP5695818B2 (ja) 2009-01-27 2015-04-08 株式会社日立ハイテクサイエンス 断面加工方法及び断面観察試料の製造方法
JP2011054497A (ja) * 2009-09-03 2011-03-17 Sii Nanotechnology Inc 断面加工観察方法および装置
JP6114319B2 (ja) * 2015-02-04 2017-04-12 株式会社日立ハイテクサイエンス 集束イオンビーム装置及び断面加工観察方法
CN105788021B (zh) * 2016-02-26 2017-12-05 北京元心科技有限公司 一种巡检方法及巡检服务器
CN112146953B (zh) * 2020-09-21 2024-03-01 长江存储科技有限责任公司 测试样品及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2010577B (en) * 1977-11-07 1982-05-06 Ion Tech Ltd Preparation of materials for examination of transmission electron microscopy techniques
FR2443085A1 (fr) * 1978-07-24 1980-06-27 Thomson Csf Dispositif de microlithographie par bombardement electronique
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
HU190855B (en) * 1983-10-12 1986-11-28 Mta Mueszaki Fizikai Kutato Intezete,Hu Device for working solid samples by ion beam and ion source to the device
JPH0616391B2 (ja) * 1984-07-13 1994-03-02 株式会社日立製作所 イオンビーム照射装置
US4733074A (en) * 1985-04-17 1988-03-22 Hitachi, Ltd. Sample surface structure measuring method
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams

Also Published As

Publication number Publication date
JP2779414B2 (ja) 1998-07-23
GB8926900D0 (en) 1990-01-17
JPH02152155A (ja) 1990-06-12
GB2227601A (en) 1990-08-01
US5028780A (en) 1991-07-02
KR0178019B1 (ko) 1999-03-20
GB2227601B (en) 1993-02-24

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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20121031

Year of fee payment: 15

EXPY Expiration of term