KR900000441B1 - Microwave plasma process and device therefor - Google Patents

Microwave plasma process and device therefor

Info

Publication number
KR900000441B1
KR900000441B1 KR8508983A KR850008983A KR900000441B1 KR 900000441 B1 KR900000441 B1 KR 900000441B1 KR 8508983 A KR8508983 A KR 8508983A KR 850008983 A KR850008983 A KR 850008983A KR 900000441 B1 KR900000441 B1 KR 900000441B1
Authority
KR
South Korea
Prior art keywords
microwave
reactor
plasma process
microwave plasma
device therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8508983A
Other languages
English (en)
Korean (ko)
Inventor
Shyujyo Fujimura
Toshimasa Kisa
Yasunari Motoki
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR900000441B1 publication Critical patent/KR900000441B1/ko
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR8508983A 1984-11-30 1985-11-30 Microwave plasma process and device therefor Expired KR900000441B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252909A JPS61131454A (ja) 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置

Publications (1)

Publication Number Publication Date
KR900000441B1 true KR900000441B1 (en) 1990-01-30

Family

ID=17243852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8508983A Expired KR900000441B1 (en) 1984-11-30 1985-11-30 Microwave plasma process and device therefor

Country Status (5)

Country Link
US (1) USRE36224E (https=)
EP (1) EP0183561B1 (https=)
JP (1) JPS61131454A (https=)
KR (1) KR900000441B1 (https=)
DE (1) DE3581605D1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
JPH079359Y2 (ja) * 1986-04-23 1995-03-06 新日本無線株式会社 プラズマ装置
DE3750115T2 (de) * 1986-10-20 1995-01-19 Hitachi Ltd Plasmabearbeitungsgerät.
US4804431A (en) * 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
FR2631199B1 (fr) * 1988-05-09 1991-03-15 Centre Nat Rech Scient Reacteur a plasma
JP2760845B2 (ja) * 1988-07-08 1998-06-04 株式会社日立製作所 プラズマ処理装置及びその方法
EP0402867B1 (en) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Apparatus for microwave processing in a magnetic field
US5037666A (en) * 1989-08-03 1991-08-06 Uha Mikakuto Precision Engineering Research Institute Co., Ltd. High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure
DE9013937U1 (de) * 1990-10-06 1992-02-06 Röhm GmbH, 64293 Darmstadt Mikrowellenstrahler
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
WO1995027998A1 (de) * 1994-04-11 1995-10-19 Wu Jeng Ming Plasmagerät
EP0688038B1 (en) * 1994-06-14 2001-12-19 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
EP0702393A3 (en) * 1994-09-16 1997-03-26 Daihen Corp Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber
US6798711B2 (en) 2002-03-19 2004-09-28 Micron Technology, Inc. Memory with address management

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2716592C3 (de) * 1976-04-15 1979-11-08 Hitachi, Ltd., Tokio Plasma-Ätzvorrichtung
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4330384A (en) * 1978-10-27 1982-05-18 Hitachi, Ltd. Process for plasma etching
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
FR2463975A1 (fr) * 1979-08-22 1981-02-27 Onera (Off Nat Aerospatiale) Procede et appareil pour la gravure chimique par voie seche des circuits integres
JPS5673539A (en) * 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
JPS58202532A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd マイクロ波プラズマ放電管
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPS6037129A (ja) * 1983-08-10 1985-02-26 Hitachi Ltd 半導体製造装置
JPS614177A (ja) * 1984-06-18 1986-01-10 松下電器産業株式会社 アダプタ装置

Also Published As

Publication number Publication date
JPS61131454A (ja) 1986-06-19
EP0183561A2 (en) 1986-06-04
EP0183561A3 (en) 1988-05-25
DE3581605D1 (de) 1991-03-07
EP0183561B1 (en) 1991-01-30
JPH053732B2 (https=) 1993-01-18
USRE36224E (en) 1999-06-08

Similar Documents

Publication Publication Date Title
KR900000441B1 (en) Microwave plasma process and device therefor
KR880011894A (ko) 초단파와 플라즈마간의 개선된 커플링 구조를 가진 하류 초단파 플라즈마 처리장치
AU7107996A (en) Microwave apparatus for controlling power levels in individual multiple cells
ES8605089A1 (es) Un aparato para controlar la oxidacion de combustible en un dispositivo de oxidacion de combustible
SE9904295D0 (sv) Device for Hybrid Plasma Processing
JPS5666041A (en) Etching method and high frequency plasma reactor
KR850000901A (ko) 마이크로파 프라즈마 처리방법 및 그 장치
AU4506993A (en) A method of treating a semiconductor wafer
EP0354669A3 (en) Dry etching apparatus with anhydrous hydrogen fluoride gas generator
JPS5782955A (en) Microwave plasma generating apparatus
JPS57167631A (en) Plasma vapor-phase growing method
GB932955A (en) Process and device for aiding heat exchange between a surface and a gas
EP0402867A3 (en) Apparatus for microwave processing in a magnetic field
SE8902391D0 (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
JPS5756036A (en) Plasma chemical vapor phase reactor
TW350981B (en) Method and system for plasma-processing
TW359850B (en) Plasma processing apparatus for radiating microwave from rectangular waveguide through long slot to plasma chamber
EP0383567A3 (en) Microwave plasma processing method and apparatus
JP2649914B2 (ja) マイクロ波プラズマ発生装置
DE3264752D1 (en) Method for simultaneously connecting several light guides
JPS5539690A (en) Plasma etching device
JPH04181646A (ja) マイクロ波プラズマ装置
JPS57174455A (en) Surface treatment for solid
JPS6464221A (en) Plasma treatment system
JPS5735937A (en) Plasma chemical reaction method

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

FPAY Annual fee payment

Payment date: 20050121

Year of fee payment: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20051201

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000