KR900000421B1 - Epoxy resin composition - Google Patents

Abstract

A mixt. of bis(amide)-type compd. (I,R1=C10-25 monofunctional satd. hydrocarbon; R2=C1-3 difunctional satd. hydrocarbon, cyclic benzene, cyclohexane; X= difunctional group), org. phosphinic compd. and guanidinic compd. is added to a epoxy resin which consists of novolak type epoxy resin and phenolic resin-type curing agent to give epoxy resin compn. exhibiting good fluid property at molding and anti- humidity and electric insulation property at high temp. for semiconductor shielding. The org. phosphinic compd. and the guanidinic compd. mixed as 95:5-80:20 wt.ratio are added to the resin at the ratio of 0.05-10wt.% on the basis of total resin.

Description

Epoxy Resin Composition for Semiconductor Encapsulation

The present invention relates to an epoxy resin composition for semiconductor encapsulation, and more particularly, to an epoxy resin composition having excellent flow characteristics during molding, and improved moisture resistance and hard electrical insulation at high temperatures.

Conventionally, epoxy resin has been widely melted as a highly reliable electrical insulating material having excellent electrical insulating properties, mechanical properties, chemical resistance, etc., and as a sealing material for semiconductor devices such as ICs, VLSIs, transistors, and diodes.

Such a molding material for semiconductor encapsulation has been used as an epoxy resin composition composed of an epoxy resin, a phenol resin curing agent, an imidazole curing catalyst, and a filler in consideration of reliability, molding processability, and the like.

However, with the recent trend of miniaturization and light weight in the field of electronic components, semiconductor devices have increased in capacity and high density, and the encapsulation type is SOP, FFP, etc., which is relatively reduced compared to semiconductor device sizes, and accordingly, epoxy resin compositions for semiconductor encapsulation also flow during molding. Although the characteristics, the moisture resistance of hardened | cured material, and the improvement of the electrical insulation characteristic at high temperature are calculated | required, this request was not fully satisfied by the conventional epoxy resin composition for semiconductor sealing.

Poor flow characteristics damage the bonding wire and the semiconductor element during molding, or reduce the adhesion between the semiconductor element and the cured resin layer, and as a result, the epoxy resin composition could not sufficiently satisfy this requirement.

Moisture that penetrates through the interface between the cured resin layer and the metal part of the semiconductor device and the cured resin layer corrodes the metal part by reaction with ionic impurities in the cured resin and degrades the electrical insulating properties of the cured resin layer. It adversely affects the reliability of the normal operation and lifespan of the semiconductor device.

The present invention solves this problem of an epoxy resin composition for semiconductor encapsulation containing a conventional imidazole-based curing catalyst, thereby providing an epoxy resin composition for semiconductor encapsulation with improved flow characteristics, moisture resistance, and electrical insulation at high temperatures. Was developed for the purpose.

In the present invention, an epoxy resin composition for semiconductor encapsulation by mixing a release agent selected from a mixture of an organic phosphine-based compound and a guanidine-based compound and a bisamide compound in an epoxy resin composition containing a novolak-type epoxy resin and a phenol resin-based curing agent as a basic component. Was prepared.

The mixture of the organic phosphine-based compound and guanidine-based compound used in the present invention is a cured product having improved moisture resistance and electrical insulation at high temperature, compared to an imidazole compound used as a curing catalyst for conventional epoxy encapsulation epoxy resins. By forming, the releasability and fluidity improver selected from the bisamide compounds contribute to the improvement of the flow characteristics, the releasability and the moisture resistance of the product during molding.

The novolak-type epoxy resin applicable to the present invention has an epoxy equivalent of 300 or less in the phenol novolak epoxy resin and the cresol novolak epoxy resin, and a softening point of 50 ° C-130 ° C.

The resin having an epoxy equivalent of 300 or more has a problem that the curing density of the cured product is lowered, heat resistance is insufficient, and when the epoxy resin having a softening point of 130 ° C. or more is used, the flow characteristics during molding are poor.

In addition, in the case of the resin having a softening point of 50 ° C. or less, there may be a problem of poor manufacturing workability and moisture resistance of the molding material. Phenolic resin-based curing agents include compounds obtained by reacting one or two or more of phenol, cresol, resorcinol, chlorophenol, phenylphenol and bisphenol-A with formaldehyde or paraformaldehyde under an acidic catalyst and at least two phenols per molecule. It is a compound having a hydroxyl group, and the less unreacted monomer is particularly advantageous for the purposes of the present invention. The addition amount is most advantageous in terms of general properties in the range of 0.5-1.5 equivalents to 1 equivalent of epoxy resin.

Among the organic phosphine-based compounds constituting one component of the curing accelerator, a second phosphine-based compound such as triphenyl phosphine, tributyl phosphine, methyl diphenyl phosphine, etc., a second such as butyl phenylphosphine, diphenyl phosphine, etc. First phosphine compounds such as phosphine compounds, phenylphosphine, octyl phosphine, and bisphosphine compounds such as bis (diphenyl phosphine) methane, 1,2bis (diphenyl phosphine) ethane and the like are suitable. Do.

Among the guanamine compounds, diphenyl guanidine, di-0-torylguanidine, 0-tolylbiguanide, di-carchol borate salt of di-0-tolylguanidine, and the like can be used.

The compounding ratio of the above-mentioned organic phosphine compound and guanamine compound is a weight ratio in the range of 95: 5-80: 20, showing the best results in molding processability, storage stability, moisture resistance, electrical properties at high temperature, etc. The range of 0.05-10 weight% of the amount which combined silver novolak-type epoxy resin and the phenol resin hardener is suitable.

If it is added less than 0.05%, the improvement of the moisture resistance and the electrical properties at high temperature is insufficient, the hardenability is poor, and if it is added more than 10% by weight, the storage stability and processing characteristics are poor.

Bisamide-based compound in the present invention can be represented by the structure of formula (1).

[Formula 1]

및

등의 2관능성 관능기이다.Wherein R ₁ is a monofunctional saturated hydrocarbon of 10-25 carbon atoms, R ₂ is a bifunctional saturated hydrocarbon of 1-3 carbon atoms, a benzene ring, or a cyclohexane ring, and X is

And

And bifunctional functional groups.

More specifically, compounds of the following structural formulas are particularly suitable.

,

,

The addition amount of the compound of formula 1 is most suitably in the range of 0.5-5.0% by weight based on the total composition. Less than 0.5% by weight is poor in releasability, flow characteristics, moisture resistance, and the like, there is a problem that mechanical, electrical properties and heat resistance is lowered at 5.0% by weight or more.

In addition, to the epoxy resin composition for semiconductor encapsulation of the present invention, inorganic fillers such as silica, aluminum hydroxide, aluminum oxide, calcium carbonate, talc powder, and coloring agents such as silane-based compounds or titanium-based inorganic surface treatment agents and carbon black can be added.

The method of manufacturing the epoxy resin composition of the present invention is applicable to both the method using a heatable mixing roll and the method using a continuous training device, the temperature may vary depending on the properties and composition of the epoxy resin, 70 ℃- The range of 110 degreeC is suitable.

The molding method of the epoxy resin composition of the present invention is applicable to methods such as transfer molding, compression molding, injection molding, etc., and molding conditions are 60 seconds at a temperature of 150 ° C. to 180 ° C. and a pressure of 50 to 150 kg / cm 2 in the case of transfer molding. After molding for -180 seconds, it is cured after 5-15 hours at 160 ℃ -200 ℃, to obtain the desired molded article.

In the following examples, specific application methods and effects of the present invention will be described.

However, the following examples do not limit the scope of the present invention.

Example 1

Cresol novolac-type epoxy resin (epoxy equivalent 220) 100 parts by weight 50 parts by weight of phenol novolac resin (hydroxyl equivalent 105), 350 parts by weight of silica, 2 parts by weight of 3-glyoxypropyltrimethoxysilane and 2 parts by weight of carbon black The mixture was homogeneously mixed, and 2.5 parts by weight of triphenylpostin, 0.5 parts by weight of diphenylguanidine, and 3 parts by weight of the bisamide compound of the following structural formula (A) were mixed to prepare an epoxy resin composition.

Example 2

An epoxy resin composition was prepared in the same composition ratio as in Example 1 except that 3.0 parts by weight was used instead of 2.5 parts by weight of triphenylphosphine.

Example 3

An epoxy resin composition was prepared in the same composition ratio as in Example 1 except that 5 parts by weight instead of 2.5 parts by weight of triphenylphosphine and 1 part by weight instead of 0.5 parts by weight of diphenylguanidine were used.

Comparative Example 1

5 parts by weight instead of 2.5 parts by weight of triphenylphosphine, and 2 parts by weight of zinc stearate without using diphenylguanidine and the bisamide compound of formula (A). Was prepared.

Comparative Example 2

Epoxy resin compositions were prepared in the same compositional ratio as in Example 1, except that 2.5 parts by weight of 2-heptamesylimidazole was used instead of using phenylphenylphosphine and diphenylguanidine.

Comparative Example 3

A composition ratio similar to that of Example 1, except that 2.5 parts by weight of 2-heptamesylimidazole and 2 parts by weight of zinc stearate were used instead of not using triphenylphosphine, the bisamide compound of Structural Formula (A) and diphenylguanidine. An epoxy resin composition was prepared.

Using the compositions prepared from the above examples and comparative examples, the volume resistivity at the spiral floor and 150 ° C. was measured, and a semiconductor device containing the MOS type IC device was manufactured to evaluate the reliability.

In addition, the results of evaluating workability during the manufacturing process of a semiconductor device containing a MOS IC device are as follows.

TABLE 1

1) According to EMM I-1-test method.

2) 120 ℃, 2kg / ㎠ steam pressure, defective product after 500 hours treatment (100 samples)

3) The number of times the equipment was suspended due to mold cleaning and mold release defects during 2000 consecutive molding operations.

As a result of the table, it can be seen that the epoxy resin composition of the present invention has improved flow characteristics, moisture resistance, and electrical insulating properties at high temperatures, and therefore, it is possible to manufacture highly reliable semiconductor devices and to have excellent workability during manufacturing.

Claims (4)

An epoxy resin composition for encapsulation comprising mixing a mixture of an organic phosphine compound and a guanidine compound with a bisamide compound represented by the following Chemical Formula 1 in an epoxy resin which is a novolak type epoxy resin or a phenol resin curing agent. [Formula 1]

Wherein R ₁ is a monofunctional saturated hydrocarbon having 10-25 carbon atoms, R ₂ is a bifunctional saturated hydrocarbon having 1-3 carbon atoms, a benzene ring or a cyclohexane ring, and X is

And the like are bifunctional functional groups. The weight ratio of the organic phosphine compound and the guanidine compound is 95: 5-80: 20, and the mixture is added in an amount of 0.05-10% by weight based on the total weight of the novolak-type epoxy resin and the phenol resin-based reinforcing agent. An epoxy resin composition for semiconductor encapsulation. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the bisamide compound is blended at 0.5 to 5% by weight based on the total composition. The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the guanidine-based compound is dicarchol borate salt of di.phenyl guanidine, di-0-tolylguanidine, 0-tolylbiguanide, and di-0-tolylguanidine. .