KR100758880B1 - Halogen-Free Epoxy resin composition for sealing Semiconductor device - Google Patents
Halogen-Free Epoxy resin composition for sealing Semiconductor device Download PDFInfo
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
본 발명은 비할로겐계 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 비할로겐계 난연제 세 종을 병용하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 본 발명의 에폭시 수지 조성물은 연소시 인체 및 환경에 유해한 부산물을 발생시키는 할로겐족 난연제를 사용하지 않고서도 우수한 난연성을 달성할 수 있으며 성형성 및 신뢰성도 충분히 달성되는 이점을 제공할 수 있다.The present invention relates to an epoxy resin composition for sealing non-halogen-based semiconductor elements, and more particularly, to an epoxy resin composition for sealing semiconductor elements using three non-halogen-based flame retardants. Excellent flame retardancy can be achieved without the use of halogenated flame retardants that generate by-products harmful to humans and the environment, and can also provide advantages that moldability and reliability are sufficiently achieved.
비할로겐계 난연제, 난연성, 성형성, 신뢰성 Non-halogen flame retardant, flame retardancy, formability, reliability
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 비할로겐계 난연제 세 종을 병용하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor element sealing, and more particularly, to an epoxy resin composition for semiconductor element sealing using three non-halogen flame retardants in combination.
일반적으로 반도체 소자 밀봉용 에폭시 수지를 제조함에 있어서 대부분의 반도체 업체에서 난연성은 UL-94 V-0를 요구하고 있다. 이러한 난연성을 확보하기 위해, 반도체 소자 밀봉용 에폭시 수지 제조 시에 난연제로는 일반적으로 브롬에폭시 또는 삼산화안티몬(Sb2O3)을 사용한다. 그러나 이러한 할로겐계 난연제 또는 삼산화안티몬을 사용하여 난연성을 확보한 반도체 봉지제용 에폭시 수지의 경우 소각 시나 화재 시 다이옥신(dioxin)이나 다이퓨란(difuran)등의 유독성 발암물질이 발생하는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우, 연소시 발생하는 HBr 및 HCl 등의 가스는 인체에 유독할 뿐만 아니라 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하 는 점 등의 문제점이 있었다.In general, in the manufacture of epoxy resins for sealing semiconductor devices, most semiconductor companies require UL-94 V-0. In order to secure such flame retardancy, bromine epoxy or antimony trioxide (Sb 2 O 3 ) is generally used as a flame retardant in the manufacture of an epoxy resin for semiconductor element sealing. However, in the case of an epoxy resin for semiconductor encapsulant which is flame retardant using a halogen-based flame retardant or antimony trioxide, it is known that toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, in the case of halogen-based flame retardants, gases such as HBr and HCl generated during combustion are not only toxic to the human body, but also a major cause of corrosion of semiconductor chips, wires, and lead frames. There were problems such as the point of action.
이에 대한 대책으로서 포스파젠(phosphazene)이나 인산 에스테르와 같은 인계 난연제 또는 질소원소 함유 수지와 같은 새로운 난연제가 검토되고 있으나, 인계 난연제 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체 장기 신뢰성 시험 시 패드나 칩부분에 부식을 일으킴으로서 신뢰성에 문제를 발생시키는 문제점이 있었다.As a countermeasure, new flame retardants such as phosphorus flame retardants such as phosphazene and phosphate esters or resins containing nitrogen elements are being investigated. However, in the case of phosphorus flame retardants, phosphoric acid and polyphosphate produced by bonding with moisture are used for the semiconductor long-term reliability test. B. There is a problem that causes problems in reliability by causing corrosion in the chip portion.
본 발명의 목적은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 비할로겐계 난연제로서 멜라민 변성유도체와 징크 보레이트계 첨가제 및 실란 코팅된 수산화 마그네슘 세 종을 병용함으로써, 인체 및 환경에 유해한 부산물의 발생 우려가 없으면서 우수한 난연성을 만족하는 반도체 소자 에폭시 수지 조성물을 제공하기 위한 것이다.An object of the present invention is to solve the above problems of the prior art, by using three kinds of melamine-modified derivatives, zinc borate-based additives and silane-coated magnesium hydroxide as a non-halogen-based flame retardant, by-products harmful to humans and the environment It is an object of the present invention to provide a semiconductor device epoxy resin composition that satisfies excellent flame retardance without causing any fear of occurrence.
본 발명은 하기 화학식 1로 표시되는 멜라민 변성 유도체와 하기 화학식 2로 표시되는 징크보레이트와 하기 화학식 3의 실란 코팅된 수산화 마그네슘을 포함하는 것을 특징으로 하는 비할로겐계 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다.The present invention provides an epoxy resin composition for sealing a non-halogen-based semiconductor device comprising a melamine-modified derivative represented by Formula 1 below, a zinc borate represented by Formula 2 below, and a silane-coated magnesium hydroxide of Formula 3 below. do.
[화학식 1][Formula 1]
(상기 식에서, R1 내지 R3은 각각 같거나 다른것으로서, 탄소수 1 내지 10의 알킬기 또는 1차 아민기이다.)(Wherein, R1 to R3 are the same or different, and each is an alkyl group having 1 to 10 carbon atoms or a primary amine group.)
[화학식 2][Formula 2]
[화학식 3][Formula 3]
Mg(OH)2 Mg (OH) 2
상기 멜라민 변성 유도체, 징크보레이트 및 실란 코팅된 수산화 마그네슘의 총 함량이 전체 수지 조성물에 대하여 0.5 ~ 8 중량%인 것을 특징으로 한다.The total content of the melamine-modified derivative, zinc borate and silane-coated magnesium hydroxide is 0.5 to 8% by weight based on the total resin composition.
본 발명은 하기 화학식 4로 표시되는 다방향족 에폭시 수지와 하기 화학식 5로 표시되는 다방향족 페놀 수지를 추가로 포함하는 것을 특징으로 하는 비할로겐계 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다.The present invention provides an epoxy resin composition for sealing a non-halogen-based semiconductor device further comprising a polyaromatic epoxy resin represented by the following formula (4) and a polyaromatic phenol resin represented by the following formula (5).
[화학식 4][Formula 4]
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
[화학식 5][Formula 5]
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
이하에서, 본 발명에 관하여 보다 상세하게 설명하기로 한다.Hereinafter, the present invention will be described in more detail.
본 발명의 비할로겐계 반도체 밀봉용 에폭시 수지 조성물은 하기 화학식 1로 표시되는 멜라민 변성 유도체와 하기 화학식 2로 표시되는 징크보레이트 및 하기 화학식 3의 실란 코팅된 수산화 마그네슘을 필수 성분으로 포함한다.The epoxy resin composition for non-halogen-based semiconductor encapsulation of the present invention includes a melamine-modified derivative represented by Formula 1 below, a zinc borate represented by Formula 2 below, and a silane-coated magnesium hydroxide of Formula 3 as essential components.
[화학식 1][Formula 1]
(상기 식에서, R1 내지 R3은 각각 같거나 다른것으로서, 탄소수 1 내지 10의 알킬기 또는 1차 아민기이다.)(Wherein, R1 to R3 are the same or different, and each is an alkyl group having 1 to 10 carbon atoms or a primary amine group.)
[화학식 2][Formula 2]
[화학식 3][Formula 3]
Mg(OH)2 Mg (OH) 2
본 발명의 비할로겐계 난연제는 상기 화학식 1로 표시되는 멜라민 변성 유도체와 상기 화학식 2로 표시되는 징크보레이트 및 상기 화학식 3의 실란 코팅된 수산화 마그네슘을 혼합하여 사용한다.The non-halogen-based flame retardant of the present invention is used by mixing the melamine-modified derivative represented by Chemical Formula 1, the zinc borate represented by Chemical Formula 2, and the silane-coated magnesium hydroxide of Chemical Formula 3.
상기 멜라민 변성 유도체의 경우는 열적, 화학적으로 매우 안정한 구조로서 고온으로 열이 가해질 경우 질소 이중 결합이 분해되면서 흡열 과정에 의한 난연 효과를 나타내며, 상기 징크보레이트(zinc borate)는 융점이 260℃이고, 내열성, 전기 특성 및 내습성이 우수하며, 고온에서 탈수반응이 일어나면서 흡열 현상이 나타나는데, 이 때 530J/g의 흡열량으로 인해 우수한 난연 효과가 나타난다. 또한 분해된 연소물이 안정적인 탄소층(Char)을 형성하면서, 기존 할로겐계 난연제보다 우수한 난연 효과가 나타나게 된다. The melamine-modified derivatives are thermally and chemically very stable structures, and when heat is applied at high temperatures, nitrogen double bonds decompose and exhibit a flame retardant effect by the endothermic process. The zinc borate has a melting point of 260 ° C., It is excellent in heat resistance, electrical properties and moisture resistance, and endothermic phenomenon occurs as the dehydration reaction occurs at high temperature. In addition, while the decomposed combustion products form a stable carbon layer (Char), the flame retardant effect is superior to the conventional halogen-based flame retardant.
상기 화학식 3의 실란 코팅된 수산화 마그네슘은 고온에서 H20를 형성하기 때문에, 기존 할로겐계 난연제보다 안정되고, 우수한 난연 효과가 나타난다. 특히 본 발명에서 적용된 수산화 마그네슘은 상온에서의 흡습 방지 및 에폭시 수지와의 혼합 시의 물성 강화를 위하여 표면에 실란 코팅된 제품을 사용하는 것이 좋은데, 이에 대한 제조 방법은 다음과 같다.Since the silane-coated magnesium hydroxide of Formula 3 forms H 2 0 at a high temperature, it is more stable than conventional halogen-based flame retardants, and exhibits excellent flame retardant effect. In particular, the magnesium hydroxide applied in the present invention is good to use a silane-coated product on the surface in order to prevent moisture absorption at room temperature and to enhance the physical properties when mixing with the epoxy resin, the manufacturing method for this is as follows.
수산화마그네슘 87 중량부를 믹서(Mixer)로 교반하면서, 실란 커플링제를 0.2∼0.8 중량부를 적하하여 15분간 교반 후 실온에서 8시간 방치하여 코팅된 수산화마그네슘을 얻는다. 이때 사용되는 실란 커플링제 종류로서는 1 분자내에 알콕시 실란기와 에폭시기등의 유기 관응기를 지난 실란 화합물을 적용할 수 있으며, 상세한 예로는 감마-프로필 트리 메톡시 실란, N-페닐-감마 프로필 메톡시 실란, 감마-글리시독시 프로필 트리 메톡시 실란 등의 에폭시를 지닌 실란 및 감마-메르캅토 프로필 트리 메톡시 실란 등 말단기가 메르캅토인 실란 또는 알킬기, 아민기 등의 말단기를 가진 실란이 모두 가능하며, 단독 또는 2종이상 병행 사용하는 것 또한 가능하다. While 87 parts by weight of magnesium hydroxide was stirred with a mixer, 0.2 to 0.8 parts by weight of a silane coupling agent was added dropwise, stirred for 15 minutes, and left at room temperature for 8 hours to obtain coated magnesium hydroxide. In this case, as the silane coupling agent used, a silane compound having passed through an organic reaction group such as an alkoxy silane group and an epoxy group in one molecule may be used. Examples of the silane coupling agent include gamma-propyl trimethoxy silane, N-phenyl-gamma propyl methoxy silane, Both silanes having an epoxy group such as gamma-glycidoxy propyl trimethoxy silane and silanes having end groups such as gamma-mercapto propyl trimethoxy silane, or terminal groups such as alkyl groups or amine groups can be used. It is also possible to use alone or in combination of two or more.
상기 멜라민 변성 유도체, 징크보레이트 및 실란 코팅된 수산화 마그네슘의 총 함량은 전체 수지 조성물에 대하여 0.5 ~ 8 중량%가 바람직하다. 사용량이 0.5 중량% 미만일 때는 난연 효과를 얻기가 어렵고, 8 중량%를 초과하면 유동 특성의 저하로 인해 성형성이 나빠지는 문제점이 발생할 수 있기 때문이다. The total content of the melamine-modified derivative, zinc borate and silane-coated magnesium hydroxide is preferably 0.5 to 8% by weight based on the total resin composition. When the amount of use is less than 0.5% by weight it is difficult to obtain a flame retardant effect, if it exceeds 8% by weight may cause a problem that the moldability is worse due to the deterioration of the flow characteristics.
본 발명의 반도체 밀봉용 에폭시 수지 조성물의 에폭시 수지는 다방향족 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 페놀 노볼락형 에폭시 수지, 바이페닐계 에폭시 수지, 비스페놀계 에폭시 수지, 디시클로펜타디엔계 에폭시 수지, 나프탈렌계 에폭시 수지 등의 임의의 에폭시수지를 적어도 한 종 이상 사용한다. 그 중에 다방향족 에폭시 수지가 난연성 향상을 위하여 바람직한데, 다방향족 에폭시 수지는 하기 화학식 4의 구조를 갖는다. The epoxy resin of the epoxy resin composition for semiconductor sealing of the present invention may be a polyaromatic epoxy resin, a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl epoxy resin, a bisphenol epoxy resin, or a dicyclopentadiene epoxy resin. And at least one arbitrary epoxy resin such as naphthalene epoxy resin. Among them, a polyaromatic epoxy resin is preferred for improving flame retardancy, and the polyaromatic epoxy resin has a structure represented by the following formula (4).
[화학식 4][Formula 4]
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 다방향족 에폭시 수지는 페놀 골격을 바탕으로 하면서 중간에 바이페닐을 가지고 있는 구조를 형성하여, 흡습성, 인성 내산화성, 및 내크랙성도 우수하며, 가교 밀도가 낮아서 고온에서 연소 시 탄소층(char)을 형성하면서 그 자체로도 어느 정도 수준의 난연성을 확보할 수 있는 장점이 있다. 본 발명에서 상기 전체 에폭시 수지의 사용량은 전체 수지 조성물 중 3.5 ~ 15 중량%가 바람직하다.The polyaromatic epoxy resin forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness oxidation resistance, and crack resistance, and has a low crosslinking density. While forming it has the advantage of ensuring a certain level of flame retardancy in itself. In the present invention, the amount of the total epoxy resin is preferably 3.5 to 15% by weight of the total resin composition.
본 발명의 반도체 밀봉용 에폭시 수지 조성물의 경화제로는 다방향족 페놀 수지, 페놀 노볼락형 수지, 크레졸 노볼락형 수지, 자일록형 수지, 디시클로펜타디 엔계 페놀 수지, 나프탈렌계 수지 등의 임의의 페놀 수지를 적어도 한 종 이상 사용한다. 그 중에 다방향족 페놀 수지가 난연성 향상을 위하여 바람직한데, 다방향족 페놀 수지는 하기 화학식 5의 구조를 갖는다. As a hardening | curing agent of the epoxy resin composition for semiconductor sealing of this invention, arbitrary phenols, such as a polyaromatic phenol resin, a phenol novolak-type resin, a cresol novolak-type resin, a xyloxic resin, a dicyclopentadiene type phenol resin, a naphthalene type resin, etc. At least one resin is used. Among them, a polyaromatic phenol resin is preferable for improving flame retardancy, and the polyaromatic phenol resin has a structure of the following Chemical Formula 5.
[화학식 5][Formula 5]
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 다방향족 페놀 수지는 다방향족 에폭시 수지와 반응하여 탄소층(char)을 형성하면서 주변의 열 및 산소의 전달을 차단함으로써 난연성을 향상시키는 장점이 있다. 본 발명에서 상기 전체 페놀 수지의 사용량은 전체 수지 조성물 중 2 ~ 10.5 중량%가 바람직하다.The polyaromatic phenolic resin has the advantage of improving flame retardancy by blocking the transfer of heat and oxygen around the reaction while forming a carbon layer (char) by reacting with the polyaromatic epoxy resin. The amount of the total phenolic resin used in the present invention is preferably 2 to 10.5% by weight of the total resin composition.
본 발명의 조성물에서 사용 가능한 경화 촉진제는 상기 다방향족 에폭시 수지와 다방향족 페놀 수지의 경화반응을 촉진하기 위한 촉매 성분으로, 예를 들면 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류; 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류; 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류; 테트라페 닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있다. 이 중에서 1종 또는 2종 이상을 병용할 수 있으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 ~ 0.3 중량%가 바람직하다.The curing accelerator usable in the composition of the present invention is a catalyst component for promoting the curing reaction of the polyaromatic epoxy resin and the polyaromatic phenol resin, for example benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri Tertiary amines such as (dimethylaminomethyl) phenol; Imidazoles such as 2-methylimidazole and 2-phenylimidazole; Organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine; Tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Among these, 1 type, or 2 or more types can be used together and 0.1-0.3 weight% is preferable with respect to the whole epoxy resin composition.
본 발명에서는 변성 실리콘 오일을 사용할 수 있는데, 내열성이 우수한 실리콘 중합체가 좋으며 에폭시 관능기를 갖는 실리콘 오일; 아민 관능기를 갖는 실리콘 오일; 및 카르복실 관능기를 갖는 실리콘 오일 등에서 선택된 1종 또는 2종 이상 혼합하여 사용할 수 있다. 바람직하게는 전체 에폭시 수지 조성물에 대해 0.05 ~ 1.5 중량%로 사용하는 것이 효과적이다.In the present invention, a modified silicone oil may be used, which is preferably a silicone polymer having excellent heat resistance and having an epoxy functional group; Silicone oils with amine functionality; And it can be used 1 type or in mixture of 2 or more types chosen from silicone oil etc. which have a carboxyl functional group. Preferably it is effective to use 0.05 to 1.5% by weight based on the total epoxy resin composition.
본 발명에서 사용할 수 있는 무기충전제로서는 그 평균입자가 0.1 ~ 35 ㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하며, 충전량은 조성물 전체에 대해 70 ~ 90중량%가 바람직하다. As the inorganic filler that can be used in the present invention, it is preferable to use molten or synthetic silica having an average particle of 0.1 to 35 µm, and the filling amount is preferably 70 to 90% by weight based on the whole composition.
본 발명의 성형재료에는 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란과 같은 커플링제 등이 필요에 따라 사용될 수 있다.In the molding material of the present invention, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, colorants such as carbon black and inorganic dyes, coupling agents such as epoxy silanes, amino silanes, and alkyl silanes can be used as necessary. have.
본 발명의 에폭시 수지 조성물은 상기와 같은 원재료를 소정의 배합량으로 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합하고, 롤밀 또는 니이더로 용융 혼련한 뒤, 냉각/분쇄과정을 거쳐 최종 분말 제품으로 얻어진다.In the epoxy resin composition of the present invention, the above-mentioned raw materials are uniformly sufficiently mixed in a predetermined amount using a Henschel mixer or a Rodige mixer, melt-kneaded with a roll mill or kneader, and then cooled / pulverized to obtain a final powder product. Obtained.
본 발명에서 수득된 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형 가능하다. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, and it can be molded by an injection molding method or a casting method.
이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로, 본 발명을 제한하는 것으로 해석되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and are not to be construed as limiting the present invention.
[실시예 1 내지 5][Examples 1 to 5]
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해, 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용하여 균일하게 혼합함으로써 분말 상태의 1차 조성물을 제조하고, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다. In order to manufacture the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component is weighed, and then uniformly mixed using a Henschel mixer to prepare a primary composition in a powder state. After melt kneading at 100 ° C. for 7 minutes using a roll mill, an epoxy resin composition was prepared by cooling and pulverizing.
상기와 같이 수득된 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해, QFP형 반도체 소자 성형 시 오토몰드시스템 (auto mold system) 성형기를 이용하여 175℃에서 80초간 성형시킨 후, 175℃에서 6시간 동안 후 경화시켜, QFP형 반도체 소자를 제작하였다. 본 발명에 의한 에폭시수지 조성물의 물성 및 난연성, 성형성 시험결과를 표 2에 나타내었다.The physical properties and reliability of the epoxy resin composition obtained as described above were evaluated in the following manner, and for the reliability test, an auto mold system molding machine was used for 80 seconds at 175 ° C for molding a QFP type semiconductor device. After molding, it was cured for 6 hours at 175 ° C to produce a QFP type semiconductor device. Table 2 shows the physical properties, flame retardancy, and moldability test results of the epoxy resin composition according to the present invention.
* 물성평가 방법* Property evaluation method
1) 스파이럴 플로우(Spiral Flow)1) Spiral Flow
EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/㎠에서 유동 길이를 평가하였다.Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.
2) 유리전이온도(Tg)2) Glass transition temperature (Tg)
TMA(Thermomechanical Analyser)로 평가하였다.It was evaluated by TMA (Thermomechanical Analyser).
3) 전기전도도3) Electrical conductivity
경화된 EMC 시험편을 분쇄기에서 약 #400MESH ~ #100MESH의 입자크기로 분쇄하고 분말화한 시료 2g±0.2㎎을 평량하여 추출용 병에 넣어서 증류수 80cc를 넣고 100℃ OVEN 내에서 24시간 추출한 다음 추출수의 상등액을 이용하여 전기전도도를 측정하였다.The cured EMC test piece was crushed to a particle size of about # 400MESH to # 100MESH in a grinder, and weighed 2g ± 0.2mg of the powdered sample into an extraction bottle, put 80cc of distilled water, and extract it for 24 hours in 100 ℃ oven. Electrical conductivity was measured using the supernatant.
4) 굴곡강도 및 굴곡 탄성율4) Flexural Strength and Flexural Modulus
경화된 EMC 성형시편(125 * 12.6 * 6.4 mm)을 준비하여 시편 중심부의 넓이와 두께를 마이크로미터(Micrometer)로 0.001㎜까지 재어 UTM 시험기에서 측정하였다.Hardened EMC molded specimens (125 * 12.6 * 6.4 mm) were prepared and measured on a UTM tester, measuring the width and thickness of the center of the specimen to 0.001 mm with a micrometer.
5) 난연성5) Flame retardant
UL 94 V-0 규격에 준하여1/8인치 두께를 기준으로 평가하였다.The evaluation was based on a 1/8 inch thickness according to the UL 94 V-0 standard.
[비교예 1 내지 2][Comparative Examples 1 and 2]
하기 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다.As shown in Table 1 below, each component was weighed in a given composition to prepare an epoxy resin composition in the same manner as in Example, and the results of evaluation of physical properties and reliability are shown in Table 2 below.
상기 표 2에 나타난 바와 같이 본 발명에 따른 에폭시 수지 조성물이 비교예에 나타난 기존의 에폭시 수지 조성물과 비교하여 난연성 UL 94 V-0 확보 및 성형성 면에서도 우수한 특성을 나타내고 있음을 확인할 수 있다.As shown in Table 2, it can be seen that the epoxy resin composition according to the present invention exhibits excellent properties in terms of securing flame retardant UL 94 V-0 and moldability as compared with the existing epoxy resin composition shown in Comparative Examples.
본 발명에 따른 반도체 소자 밀봉용 에폭시 수지 조성물은 연소 시에 인체 및 환경에 유해한 부산물을 발생시키지 않을 뿐만 아니라, 반도체 칩 및 리드 프레임의 부식을 초래하지 않으면서도 난연성이 확보되고, 성형성이 우수한 에폭시수지 조성물을 제공한다.The epoxy resin composition for sealing a semiconductor device according to the present invention not only does not generate by-products harmful to humans and the environment during combustion, but also has flame retardancy without inducing corrosion of semiconductor chips and lead frames, and has excellent moldability. It provides a resin composition.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020050126358A KR100758880B1 (en) | 2005-12-20 | 2005-12-20 | Halogen-Free Epoxy resin composition for sealing Semiconductor device |
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| KR1020050126358A KR100758880B1 (en) | 2005-12-20 | 2005-12-20 | Halogen-Free Epoxy resin composition for sealing Semiconductor device |
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| KR20070065679A KR20070065679A (en) | 2007-06-25 |
| KR100758880B1 true KR100758880B1 (en) | 2007-09-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001158852A (en) | 1999-12-02 | 2001-06-12 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| US20050209378A1 (en) | 2003-04-30 | 2005-09-22 | Tanweer Ahsan | Flame-retardant molding compositions |
| KR20050106253A (en) * | 2004-05-04 | 2005-11-09 | 제일모직주식회사 | Epoxy resin composition for sealing semiconductor device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001158852A (en) | 1999-12-02 | 2001-06-12 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| US20050209378A1 (en) | 2003-04-30 | 2005-09-22 | Tanweer Ahsan | Flame-retardant molding compositions |
| KR20060007042A (en) * | 2003-04-30 | 2006-01-23 | 헨켈 코포레이션 | Flame-retardant molding compositions |
| KR20050106253A (en) * | 2004-05-04 | 2005-11-09 | 제일모직주식회사 | Epoxy resin composition for sealing semiconductor device |
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| KR20070065679A (en) | 2007-06-25 |
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