KR100686886B1 - Epoxy resin composition for sealing semiconductor device - Google Patents

Epoxy resin composition for sealing semiconductor device Download PDF

Info

Publication number
KR100686886B1
KR100686886B1 KR1020050130742A KR20050130742A KR100686886B1 KR 100686886 B1 KR100686886 B1 KR 100686886B1 KR 1020050130742 A KR1020050130742 A KR 1020050130742A KR 20050130742 A KR20050130742 A KR 20050130742A KR 100686886 B1 KR100686886 B1 KR 100686886B1
Authority
KR
South Korea
Prior art keywords
epoxy resin
formula
resin composition
semiconductor device
sealing
Prior art date
Application number
KR1020050130742A
Other languages
Korean (ko)
Inventor
김경태
박현진
Original Assignee
제일모직주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제일모직주식회사 filed Critical 제일모직주식회사
Priority to KR1020050130742A priority Critical patent/KR100686886B1/en
Application granted granted Critical
Publication of KR100686886B1 publication Critical patent/KR100686886B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/016—Flame-proofing or flame-retarding additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00—Properties
    • C08L2201/02—Flame or fire retardant/resistant

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An epoxy resin composition for sealing semiconductor device is provided to accomplish excellent flame retardancy, moldability and reliability while not generating by-products harmful to human and environment. The epoxy resin composition for sealing a semiconductor device comprises an epoxy resin, a curing agent, a curing accelerator, an inorganic filling agent and a flame retardant, wherein the flame retardant comprises a muscovite-containing compound represented by the formula 1: K(OHF2)2A13Si3O10. Preferably, the epoxy resin comprises a poly-aromatic epoxy resin represented by the formula 2, and the curing agent comprises a poly-aromatic phenol resin represented by the formula 3, wherein an average of n is 1 to 7.

Description

반도체 소자 밀봉용 에폭시 수지 조성물{Epoxy resin composition for sealing Semiconductor device}Epoxy resin composition for sealing semiconductor device

본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 비할로겐계 난연제로서 백운모 함유 화합물을 포함하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for semiconductor element sealing, and more particularly, to an epoxy resin composition for semiconductor element sealing containing a mica-containing compound as a non-halogen flame retardant.

일반적으로 반도체 소자 밀봉용 에폭시 수지를 제조함에 있어서 대부분의 반도체 업체에서 난연성은 UL-94 V-0를 요구하고 있다. 이러한 난연성을 확보하기 위해, 반도체 소자 밀봉용 에폭시 수지 제조 시에 난연제로는 일반적으로 브롬에폭시 또는 삼산화안티몬(Sb2O3)을 사용한다. 그러나 이러한 할로겐계 난연제 또는 삼산화안티몬을 사용하여 난연성을 확보한 반도체 봉지제용 에폭시 수지의 경우 소각 시나 화재 시 다이옥신(dioxin)이나 다이퓨란(difuran) 등의 유독성 발암물질이 발생하는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우, 연소 시 발생하는 HBr 및 HCl 등의 가스는 인체에 유독할 뿐만 아니라 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하 는 점 등의 문제점이 있었다.In general, in the manufacture of epoxy resins for sealing semiconductor devices, most semiconductor companies require UL-94 V-0. In order to secure such flame retardancy, bromine epoxy or antimony trioxide (Sb 2 O 3 ) is generally used as a flame retardant in the manufacture of an epoxy resin for semiconductor element sealing. However, in the case of incineration or fire, epoxy resins for semiconductor encapsulation materials which have obtained flame retardancy by using halogen-based flame retardants or antimony trioxide are known to generate toxic carcinogens such as dioxin or difuran. In addition, in the case of halogen-based flame retardants, gases such as HBr and HCl generated during combustion are not only toxic to the human body, but also a major cause of corrosion of semiconductor chips, wires, and lead frames. There were problems such as the point of action.

이에 대한 대책으로서 포스파젠(phosphazene)이나 인산 에스테르와 같은 인계 난연제 또는 질소원소 함유 수지와 같은 새로운 난연제가 검토되고 있으나, 인계 난연제 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체 장기 신뢰성 시험 시 패드나 칩 부분에 부식을 일으킴으로서 신뢰성에 문제를 발생시키는 문제점이 있었다.As a countermeasure, new flame retardants such as phosphorus flame retardants such as phosphazene and phosphate esters or resins containing nitrogen elements are being investigated. However, in the case of phosphorus flame retardants, phosphoric acid and polyphosphate produced by bonding with moisture are used for the semiconductor long-term reliability test. B. There was a problem that caused problems in reliability by causing corrosion in the chip portion.

본 발명의 목적은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 비할로겐계 난연제로서 백운모 함유 화합물을 포함함으로써, 인체 및 환경에 유해한 부산물의 발생 우려가 없으면서 우수한 난연성을 만족하는 반도체 소자 에폭시 수지 조성물을 제공하기 위한 것이다.SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art as described above, and includes a mica-containing compound as a non-halogen-based flame retardant, so that the semiconductor device epoxy resin satisfies excellent flame retardancy without the risk of generation of by-products harmful to humans and the environment. To provide a composition.

본 발명은 백운모 함유 화합물을 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다.The present invention provides an epoxy resin composition for sealing semiconductor elements comprising a mica-containing compound.

상기 백운모는 하기 화학식 1의 구조를 갖는 것을 특징으로 한다.The mica is characterized in that it has a structure of formula (1).

[화학식 1][Formula 1]

K(OHFK (OHF 22 )) 22 A1A1 33 SiSi 33 OO 1010

상기 백운모 함유 화합물의 총 함량은 전체 수지 조성물에 대하여 0.5 ~ 10 중량%인 것을 특징으로 한다.The total content of the dolomite-containing compound is characterized in that 0.5 to 10% by weight based on the total resin composition.

상기 반도체 소자 밀봉용 에폭시 수지 조성물은 하기 화학식 2로 표시되는 다방향족 에폭시 수지와 하기 화학식 3으로 표시되는 다방향족 페놀 수지를 추가로 포함하는 것을 특징으로 한다. The epoxy resin composition for sealing a semiconductor device may further include a polyaromatic epoxy resin represented by the following Chemical Formula 2 and a polyaromatic phenol resin represented by the following Chemical Formula 3.

[화학식 2][Formula 2]

Figure 112005076794664-pat00001
Figure 112005076794664-pat00001

(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)

[화학식 3][Formula 3]

Figure 112005076794664-pat00002
Figure 112005076794664-pat00002

(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)

이하에서, 본 발명에 관하여 보다 상세하게 설명하기로 한다.Hereinafter, the present invention will be described in more detail.

본 발명의 반도체 밀봉용 에폭시 수지 조성물은 하기 화학식 1로 표시되는 백운모를 함유하는 화합물을 필수 성분으로 포함한다.The epoxy resin composition for semiconductor sealing of this invention contains the compound containing the white mica represented by following formula (1) as an essential component.

[화학식 1][Formula 1]

K(OHFK (OHF 22 )) 22 A1A1 33 SiSi 33 OO 1010

상기 백운모 함유 화합물은 열적, 화학적으로 매우 안정한 구조로서 고온으로 열이 가해질 경우 백운모 함유 화합물이 분해되면서 흡열 반응에 의한 난연 효과를 나타낸다.The dolomite-containing compound has a thermally and chemically very stable structure and exhibits a flame retardant effect by the endothermic reaction as the dolomite-containing compound is decomposed when heat is applied at a high temperature.

상기 백운모 함유 화합물의 사용량은 전체 수지 조성물에 대하여 0.5 ~ 10 중량%가 바람직하다. 사용량이 0.5 중량% 미만일 때는 난연 효과를 얻기가 어렵고, 10 중량%를 초과하면 유동성 특성의 저하로 인해 성형성이 나빠지는 문제점이 발생할 수 있다. The amount of the mica-containing compound is preferably 0.5 to 10% by weight based on the total resin composition. When the amount of use is less than 0.5% by weight, it is difficult to obtain a flame retardant effect, and when the amount is more than 10% by weight, there may be a problem in that moldability is deteriorated due to deterioration in fluidity characteristics.

본 발명의 반도체 밀봉용 에폭시 수지 조성물의 에폭시 수지는 다방향족 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 페놀 노볼락형 에폭시 수지, 바이페닐계 에폭시 수지, 비스페놀계 에폭시 수지, 디시클로펜타디엔계 에폭시 수지, 나프탈렌계 에폭시 수지 등의 임의의 에폭시수지를 적어도 한 종 이상 사용한다. 그 중에 다방향족 에폭시 수지가 난연성 향상을 위하여 바람직한데, 다방향족 에폭시 수지는 하기 화학식 2의 구조를 갖는다. The epoxy resin of the epoxy resin composition for semiconductor sealing of the present invention may be a polyaromatic epoxy resin, a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl epoxy resin, a bisphenol epoxy resin, or a dicyclopentadiene epoxy resin. And at least one arbitrary epoxy resin such as naphthalene epoxy resin. Among them, a polyaromatic epoxy resin is preferred for improving flame retardancy, and the polyaromatic epoxy resin has a structure of Formula 2 below.

[화학식 2][Formula 2]

Figure 112005076794664-pat00003
Figure 112005076794664-pat00003

(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)

상기 다방향족 에폭시 수지는 페놀 골격을 바탕으로 하면서 중간에 바이페닐을 가지고 있는 구조를 형성하여, 흡습성, 인성 내산화성, 및 내크랙성도 우수하며, 가교 밀도가 낮아서 고온에서 연소 시 탄소층(char)을 형성하면서 그 자체로도 어느 정도 수준의 난연성을 확보할 수 있는 장점이 있다. 본 발명에서 상기 전체 에폭시 수지의 사용량은 전체 수지 조성물 중 3.5 ~ 15 중량%가 바람직하다.The polyaromatic epoxy resin forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness oxidation resistance, and crack resistance, and has a low crosslinking density. While forming it has the advantage of ensuring a certain level of flame retardancy in itself. In the present invention, the amount of the total epoxy resin is preferably 3.5 to 15% by weight of the total resin composition.

본 발명의 반도체 밀봉용 에폭시 수지 조성물의 경화제로는 다방향족 페놀 수지, 페놀 노볼락형 수지, 크레졸 노볼락형 수지, 자일록형 수지, 디시클로펜타디엔계 페놀 수지, 나프탈렌계 수지 등의 임의의 페놀 수지를 적어도 한 종 이상 사용한다. 그 중에 다방향족 페놀 수지가 난연성 향상을 위하여 바람직한데, 다방향족 페놀 수지는 하기 화학식 3의 구조를 갖는다. As a hardening | curing agent of the epoxy resin composition for semiconductor sealing of this invention, arbitrary phenols, such as a polyaromatic phenol resin, a phenol novolak-type resin, a cresol novolak-type resin, a xyloxic resin, a dicyclopentadiene type phenol resin, a naphthalene type resin, etc. At least one resin is used. Among them, a polyaromatic phenol resin is preferred for improving flame retardancy, and the polyaromatic phenol resin has a structure of the following Chemical Formula 3.

[화학식 3][Formula 3]

Figure 112005076794664-pat00004
Figure 112005076794664-pat00004

(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)

상기 다방향족 페놀 수지는 다방향족 에폭시 수지와 반응하여 탄소층(char)을 형성하면서 주변의 열 및 산소의 전달을 차단함으로써 난연성을 향상시키는 장점이 있다. 본 발명에서 상기 전체 페놀 수지의 사용량은 전체 수지 조성물 중 2 ~ 10.5 중량%가 바람직하다.The polyaromatic phenolic resin has the advantage of improving flame retardancy by blocking the transfer of heat and oxygen around the reaction while forming a carbon layer (char) by reacting with the polyaromatic epoxy resin. The amount of the total phenolic resin used in the present invention is preferably 2 to 10.5% by weight of the total resin composition.

본 발명의 조성물에서 사용 가능한 경화 촉진제는 상기 다방향족 에폭시 수지와 다방향족 페놀 수지의 경화반응을 촉진하기 위한 촉매 성분으로, 예를 들면 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류; 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류; 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류; 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있다. 이 중에서 1종 또는 2종 이상을 병용할 수 있으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 ~ 0.3 중량%가 바람직하다.The curing accelerator usable in the composition of the present invention is a catalyst component for promoting the curing reaction of the polyaromatic epoxy resin and the polyaromatic phenol resin, for example benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri Tertiary amines such as (dimethylaminomethyl) phenol; Imidazoles such as 2-methylimidazole and 2-phenylimidazole; Organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine; Tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Among these, 1 type, or 2 or more types can be used together and 0.1-0.3 weight% is preferable with respect to the whole epoxy resin composition.

본 발명에서 사용할 수 있는 무기충전제로서는 그 평균입자가 0.1 ~ 35 ㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하며, 충전량은 조성물 전체에 대해 70 ~ 90중량%가 바람직하다. As the inorganic filler that can be used in the present invention, it is preferable to use molten or synthetic silica having an average particle of 0.1 to 35 µm, and the filling amount is preferably 70 to 90% by weight based on the whole composition.

본 발명의 성형재료에는 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란과 같은 커플링제, 변성 실리콘 오일, 실리콘 파우더, 실리콘 레진 등의 응력완화제 등이 필요에 따라 사용될 수 있다.The molding materials of the present invention include mold release agents such as higher fatty acids, higher fatty acid metal salts and ester waxes, colorants such as carbon black and organic and inorganic dyes, coupling agents such as epoxy silanes, amino silanes and alkyl silanes, modified silicone oils and silicone powders. Stress relieving agents, such as silicone resin, etc. can be used as needed.

본 발명의 에폭시 수지 조성물은 상기와 같은 원재료를 소정의 배합량으로 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합하고, 롤밀 또는 니이더로 용융 혼련한 뒤, 냉각/분쇄과정을 거쳐 최종 분말 제품으로 얻어진다.In the epoxy resin composition of the present invention, the above-mentioned raw materials are uniformly sufficiently mixed in a predetermined amount using a Henschel mixer or a Rodige mixer, melt-kneaded with a roll mill or kneader, and then cooled / pulverized to obtain a final powder product. Obtained.

본 발명에서 수득된 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형 가능하다. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, and it can be molded by an injection molding method or a casting method.

이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로, 본 발명을 제한하는 것으로 해석되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and are not to be construed as limiting the present invention.

[실시예 1 내지 3][Examples 1-3]

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해, 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용하여 균일하게 혼합함으로써 분말 상태의 1차 조성물을 제조하고, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융 혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다. In order to manufacture the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component is weighed, and then uniformly mixed using a Henschel mixer to prepare a primary composition in a powder state. After melt kneading at 100 ° C. for 7 minutes using a roll mill, an epoxy resin composition was prepared by cooling and pulverizing.

상기와 같이 수득된 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해, SOP(Small Outlined Package)형 반도체 소자 성형 시 Auto Mold System 성형기를 이용하여 175℃에서 80초간 성형시킨 후, 175℃에서 6시간 동안 후경화시켜, SOP형 반도체 소자를 제작하였다. 본 발명에 의한 에폭시수지 조성물의 물성 및 시험결과를 표 2에 나타내었다.The properties and reliability of the epoxy resin composition obtained as described above were evaluated in the following manner, and for reliability test, 80 seconds at 175 ° C. using an Auto Mold System molding machine when forming a small outlined package (SOP) type semiconductor device. After molding, it was post-cured at 175 ° C. for 6 hours to fabricate an SOP semiconductor device. Table 2 shows the physical properties and test results of the epoxy resin composition according to the present invention.

* 물성평가 방법* Property evaluation method

1) 스파이럴 플로우(Spiral Flow)1) Spiral Flow

EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/㎠에서 유동 길이를 평가하였다.Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.

2) 유리전이온도(Tg)2) Glass transition temperature (Tg)

TMA(Thermomechanical Analyser)로 평가하였다.It was evaluated by TMA (Thermomechanical Analyser).

3) 굴곡강도 및 굴곡 탄성율3) Flexural strength and flexural modulus

경화된 EMC 성형시편(125 * 12.6 * 6.4 ㎜)을 준비하여 시편 중심부의 넓이와 두께를 마이크로미터(Micrometer)로 0.001mm까지 재어 UTM 시험기에서 측정하였다.Hardened EMC molded specimens (125 * 12.6 * 6.4 mm) were prepared, and the width and thickness of the center of the specimen were measured on a UTM tester with a micrometer measuring up to 0.001 mm.

4) 난연성4) Flame retardant

UL 94 V-0 규격에 준하여 1/8인치 두께를 기준으로 평가하였다.Based on the UL 94 V-0 standard was evaluated based on 1/8 inch thickness.

5) 신뢰성5) reliability

SOP형 반도체 소자를 조립하고 PCT(Pressure cooker test) 설비에서 121℃, Assemble SOP type semiconductor device, and 121 ℃, in pressure cooker test (PCT) facility.

2기압의 조건으로 96시간 담지한 후 칩의 부식 여부를 평가하였다.After immersion for 96 hours at 2 atm, the chip was evaluated for corrosion.

[비교예 1 내지 2][Comparative Examples 1 and 2]

하기 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 평가결과를 표 2에 나타내었다.As shown in Table 1 below, each component was weighed in a given composition to prepare an epoxy resin composition in the same manner as in Example, and the physical properties and evaluation results are shown in Table 2.

구 성 성 분Composition 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예 1Comparative Example 1 비교예 2Comparative Example 2 에폭시 수지Epoxy resin 다방향족 변성 에폭시 수지Multiaromatic Modified Epoxy Resin 9.39.3 5.15.1 -- 9.99.9 오르소크레졸노볼락Orthocresol novolac -- 5.15.1 9.19.1 -- 7.97.9 경화제Hardener 다방향족Multi-aromatic 4.54.5 2.82.8 -- 6.66.6 -- 페놀노볼락Phenol novolac -- 2.82.8 3.63.6 -- 3.93.9 난연제Flame retardant 백운모 함유 화합물Dolomite-containing compound 5.05.0 3.03.0 1.01.0 -- -- 브롬화에폭시수지Brominated epoxy resin -- -- -- 1.51.5 0.70.7 삼산화안티몬Antimony trioxide -- -- -- 0.80.8 0.30.3 경화촉진제Curing accelerator 0.30.3 0.30.3 0.40.4 0.30.3 0.40.4 실리카Silica 80.080.0 80.080.0 85.085.0 80.080.0 85.085.0 γ-글리시톡시프로필트리메톡시실란 γ-glycithoxypropyltrimethoxysilane 0.40.4 0.40.4 0.40.4 0.40.4 0.40.4 카본블랙Carbon black 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 카르나우바왁스Carnauba Wax 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3 합 계Sum 100.0100.0 100.0100.0 100.0100.0 100.0100.0 100.0100.0

평 가 항 목Evaluation Item 실시예1Example 1 실시예2Example 2 실시예3Example 3 비교예1Comparative Example 1 비교예2Comparative Example 2 스파이럴 플로우(inch)Spiral Flow (inch) 4747 4242 3535 4646 3535 Tg(℃)Tg (℃) 135135 152152 154154 140140 166166 굴곡강도(kgf/㎟ at 35℃)Flexural Strength (kgf / ㎡ at 35 ℃) 1717 1616 1515 1616 1515 굴곡탄성율(kgf/㎟ at 35℃)Flexural modulus (kgf / ㎡ at 35 ℃) 21502150 23002300 23602360 22002200 24002400 난연성Flame retardant UL 94 V-0UL 94 V-0 V-0V-0 V-0V-0 V-0V-0 V-0V-0 V-0V-0 성형성Formability 보이드 발생갯수 (Visual Inspection)Void occurrence number (Visual Inspection) 00 00 00 22 1One 총 실험한 갯수Total experiments 1,0001,000 1,0001,000 1,0001,000 1,0001,000 1,0001,000 PCT 신뢰성PCT Reliability 부식 발생수Corrosion water 00 00 00 00 1One 총 실험한 갯수Total experiments 7777 7777 7777 7777 7777

상기 표 2에 나타난 바와 같이 본 발명에 따른 에폭시 수지 조성물은 기존의 할로겐계 난연제를 사용한 기존의 에폭시 수지 조성물과 비교하여 난연성 UL 94 V-0를 확보하면서도 성형성, 신뢰성 측면에서 보다 우수한 특성을 나타내고 있음을 확인할 수 있다.As shown in Table 2, the epoxy resin composition according to the present invention exhibits superior properties in terms of moldability and reliability while securing flame retardant UL 94 V-0 compared to the conventional epoxy resin composition using a halogen-based flame retardant. It can be confirmed.

본 발명에 따른 반도체 소자 밀봉용 에폭시 수지 조성물은 연소 시에 인체 및 환경에 유해한 부산물을 발생시키지 않을 뿐만 아니라, 반도체 칩 및 리드 프레임의 부식을 초래하지 않으면서도 난연성이 확보되고, 성형성 및 신뢰성이 우수한 에폭시수지 조성물을 제공한다.The epoxy resin composition for sealing a semiconductor device according to the present invention not only does not produce by-products harmful to human body and environment during combustion, but also ensures flame retardancy without causing corrosion of semiconductor chips and lead frames, and has excellent moldability and reliability. It provides an excellent epoxy resin composition.

Claims (4)

에폭시수지, 경화제, 경화촉진제, 무기충전제, 및 난연제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제가 하기 화학식 1로 표시되는 백운모를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.An epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a flame retardant, wherein the flame retardant comprises a white mica represented by the following general formula (1). [화학식 1][Formula 1] K(OHF2)2A13Si3O10 K (OHF 2 ) 2 A1 3 Si 3 O 10 삭제delete 제 1항에 있어서, 상기 백운모 함량이 전체 수지 조성물에 대하여 0.5 ~ 10 중량%인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the content of the mica is 0.5 to 10% by weight based on the total resin composition. 제 1항에 있어서, 상기 에폭시수지가 하기 화학식 2로 표시되는 다방향족 에폭시수지를 포함하고, 상기 경화제가 하기 화학식 3으로 표시되는 다방향족 페놀수지를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The epoxy resin for sealing a semiconductor device according to claim 1, wherein the epoxy resin comprises a polyaromatic epoxy resin represented by the following Chemical Formula 2, and the curing agent comprises a polyaromatic phenol resin represented by the following Chemical Formula 3. Composition. [화학식 2][Formula 2]
Figure 112007003193524-pat00005
Figure 112007003193524-pat00005
 (상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.) [화학식 3][Formula 3]
Figure 112007003193524-pat00006
Figure 112007003193524-pat00006
 (상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
KR1020050130742A 2005-12-27 2005-12-27 Epoxy resin composition for sealing semiconductor device KR100686886B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020050130742A KR100686886B1 (en) 2005-12-27 2005-12-27 Epoxy resin composition for sealing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050130742A KR100686886B1 (en) 2005-12-27 2005-12-27 Epoxy resin composition for sealing semiconductor device

Publications (1)

Publication Number Publication Date
KR100686886B1 true KR100686886B1 (en) 2007-02-26

Family

ID=38104614

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050130742A KR100686886B1 (en) 2005-12-27 2005-12-27 Epoxy resin composition for sealing semiconductor device

Country Status (1)

Country Link
KR (1) KR100686886B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100779902B1 (en) 2006-12-28 2007-11-28 제일모직주식회사 Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09194689A (en) * 1996-01-22 1997-07-29 Sumitomo Bakelite Co Ltd Epoxy resin composition for semiconductor sealing
JP2000230111A (en) 1999-02-09 2000-08-22 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
KR20040014340A (en) 2002-08-09 2004-02-14 신에쓰 가가꾸 고교 가부시끼가이샤 Flame-Retardant Epoxy Resin Composition, and Semiconductor Sealing Material and Resin Sealing-Type Semiconductor Device Using the Same
KR20050106253A (en) 2004-05-04 2005-11-09 제일모직주식회사 Epoxy resin composition for sealing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09194689A (en) * 1996-01-22 1997-07-29 Sumitomo Bakelite Co Ltd Epoxy resin composition for semiconductor sealing
JP2000230111A (en) 1999-02-09 2000-08-22 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
KR20040014340A (en) 2002-08-09 2004-02-14 신에쓰 가가꾸 고교 가부시끼가이샤 Flame-Retardant Epoxy Resin Composition, and Semiconductor Sealing Material and Resin Sealing-Type Semiconductor Device Using the Same
KR20050106253A (en) 2004-05-04 2005-11-09 제일모직주식회사 Epoxy resin composition for sealing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100779902B1 (en) 2006-12-28 2007-11-28 제일모직주식회사 Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same

Similar Documents

Publication Publication Date Title
KR100886331B1 (en) Epoxy resin composition for sealing Semiconductor device
KR100599865B1 (en) Epoxy resin composition for sealing Semiconductor device
KR100686886B1 (en) Epoxy resin composition for sealing semiconductor device
KR101266535B1 (en) Epoxy resin composition for encapsulating semiconductor device　and semiconductor device using the　same
KR100611442B1 (en) Epoxy resin composition comprising organic nitrogen compound containing titanium as flame retardants
KR100751181B1 (en) Epoxy resin composition for sealing Semiconductor device
KR100758881B1 (en) Epoxy resin composition for sealing Semiconductor device and Semiconductor device Sealed therewith
KR100558256B1 (en) Epoxy resin composition for sealing semiconductor device
KR100611459B1 (en) Epoxy Resin Composition for Encapsulating Semiconductor Device
KR100611457B1 (en) Epoxy Resin Composition for Encapsulating Semiconductor Device
KR100673612B1 (en) High reliable epoxy molding compound having good flame retardancy and flow-ability for sealing electronic component
KR100558254B1 (en) Epoxy molding compound for sealing electronic component
KR100558261B1 (en) Epoxy Resin Composition for Encapsulating Semiconductor Device
KR100536094B1 (en) Epoxy resin composition for encapsulation of semiconductor device
KR100561575B1 (en) Epoxy resin for packaging semiconductor device
KR100673752B1 (en) Epoxy resin composition for encapsulating semiconductor device
KR100558257B1 (en) Epoxy resin composition for sealing Semiconductor device
KR100797976B1 (en) Epoxy resin composition for packaging semiconductor device
KR100758880B1 (en) Halogen-Free Epoxy resin composition for sealing Semiconductor device
KR100599863B1 (en) Epoxy Resin Composition for Encapsulating Semiconductor Device
KR100779902B1 (en) Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same
KR100678689B1 (en) Epoxy resin composition for encapsulating semiconductor device
KR100611458B1 (en) Epoxy Resin Composition for Encapsulating Semiconductor Device
KR100561569B1 (en) Epoxy resin composition for encapsulating semiconductor device
KR100861324B1 (en) Epoxy resin composition for sealing semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130104

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20131217

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20141223

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20160119

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20170119

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20180122

Year of fee payment: 12

FPAY Annual fee payment

Payment date: 20190117

Year of fee payment: 13

FPAY Annual fee payment

Payment date: 20200129

Year of fee payment: 14