KR100558254B1 - Epoxy molding compound for sealing electronic component - Google Patents

Epoxy molding compound for sealing electronic component Download PDF

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KR100558254B1
KR100558254B1 KR1020030044797A KR20030044797A KR100558254B1 KR 100558254 B1 KR100558254 B1 KR 100558254B1 KR 1020030044797 A KR1020030044797 A KR 1020030044797A KR 20030044797 A KR20030044797 A KR 20030044797A KR 100558254 B1 KR100558254 B1 KR 100558254B1
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epoxy resin
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silicone oil
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최병준
유제홍
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제일모직주식회사
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00Properties
    • C08L2201/02Flame or fire retardant/resistant

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Abstract

본 발명은 반도체용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 에폭시 수지, 경화제, 경화촉진제, 난연제, 변성실리콘 오일 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제로서 화학식 1로 표시되는 징크 보레이트와 화학식 2로 표시되는 POSS(polyhedral oligomeric silsesquioxane)을 병용하여 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이며, 본 발명에 의해 할로겐계 난연제의 유해성을 없애면서도 난연성, 신뢰성 및 성형성이 확보되는 효과를 제공한다.The present invention relates to an epoxy resin composition for semiconductors, and more particularly, to an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, a flame retardant, a modified silicone oil, and an inorganic filler, wherein the zinc is represented by Formula 1 as the flame retardant. The present invention relates to an epoxy resin composition for sealing a semiconductor device, using a borate and a polyhedral oligomeric silsesquioxane (POSS) represented by Chemical Formula 2 in combination. Provides the effect of securing sex.

[화학식 1][Formula 1]

Figure 112003024234169-pat00001
Figure 112003024234169-pat00001

[화학식 2][Formula 2]

Figure 112003024234169-pat00002
Figure 112003024234169-pat00002

상기식에서 R은 페닐기(phenyl group)이다.In which R is a phenyl group.

반도체 봉지제, 에폭시 수지 조성물, 비할로겐계 난연제, 징크보레이트, POSS(폴리헤드럴 올리고메릭 실세스퀴옥산)Semiconductor sealing agent, epoxy resin composition, non-halogen flame retardant, zinc borate, POSS (polyhedral oligomeric silsesquioxane)

Description

반도체 소자 밀봉용 에폭시 수지 조성물{Epoxy molding compound for sealing electronic component}Epoxy resin compound for sealing semiconductor elements

본 발명은 반도체용 에폭시 수지 조성물에 관한 것으로, 난연제로서 비할로겐(non-halogen)계인 징크보레이트(zinc borate)와 실리콘 화합물인 POSS (polyhedral oligomeric silsesquioxane)를 사용한 반도체 봉지제용 에폭시 수지 조성물에 관한 것이다. 일반적으로 반도체 봉지제용 에폭시 수지를 제조함에 있어서 난연성이 필요하며 대부분의 반도체업체에서 UL-94 V-0를 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 난연제를 사용하여 반도체 봉지제용 에폭시 수지를 제조하고 있으며 주로 브롬에폭시와 삼산화안티몬을 반도체 봉지제용 에폭시 수지 제조시 사용하여 난연성을 확보하고 있다. 즉 반도체 봉지제용 에폭시 수지를 제조시 난연성을 부여하는 난연제로서 브롬이나 염소계의 할로겐계 난연제와 이것과 같이 난연 상승효과가 우수한 Sb2O3를 난연 보조제로 많이 사용하고 있다. 이러한 할로겐계 난연제를 사용하여 난연성을 가진 반도체 봉지제용 에폭시수지의 경우 소각시나 화재시 다이옥신(dioxin)이나 다이퓨란(difuran)등의 유독성 발암물 질이 발생되는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우 연소시 발생하는 HBr 및 HCl등의 가스로 인해 인체에 유독하며 반도체 칩(chip)이나 리드 프레임 (lead frame)에서 부식(corrosion)을 발생시키는 주요한 원인으로 작용하는 점 등의 문제가 있다. 이에 대한 대책으로서 포스파젠(phosphazene)이나 인산에스테르와 같은 인계 난연제 및 질소원소 함유 수지와 같은 신규 난연제가 검토되고 있으나 질소원소 함유 수지의 경우 난연성이 부족하고 인계 난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체의 신뢰성을 떨어뜨리는 문제가 발생하고 있다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductors, and relates to an epoxy resin composition for semiconductor encapsulants using zinc borate, which is a non-halogen type, and a polyhedral oligomeric silsesquioxane (POSS), which is a silicone compound. In general, flame retardancy is required in manufacturing an epoxy resin for semiconductor encapsulant, and most semiconductor companies require UL-94 V-0 as flame retardant. In order to secure such flame retardancy, a flame retardant is used to manufacture an epoxy resin for a semiconductor encapsulant, and bromine epoxy and antimony trioxide are mainly used to prepare an epoxy resin for a semiconductor encapsulant to ensure flame retardancy. In other words, brominated or chlorinated halogen-based flame retardants and Sb2O3 having excellent flame retardant synergistic effects are widely used as flame retardants as flame retardants for imparting flame retardancy in manufacturing epoxy resins for semiconductor encapsulants. In the case of incineration or fire, epoxy resins for flame retardant semiconductor encapsulants using halogen-based flame retardants are known to produce toxic carcinogens such as dioxin or difuran. In addition, halogen-based flame retardants are toxic to humans due to gases such as HBr and HCl generated during combustion, and act as a major cause of corrosion in semiconductor chips or lead frames. there is a problem. As a countermeasure, new flame retardants such as phosphorus flame retardants such as phosphazene and phosphate esters and nitrogen element-containing resins have been considered. However, phosphorus flame retardants in nitrogen element-containing resins are insufficient in flame retardancy and phosphorus flame retardants are combined with moisture. And a problem that polyphosphoric acid degrades the reliability of the semiconductor.

본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위해 징크보레이트 (zinc borate)와 실리콘 화합물인 POSS(polyhedral oligomeric silsesquioxane)의 비할로겐(non-halogen)계 난연제를 사용한 반도체 봉지제용 에폭시 수지 조성물을 제공한다.The present invention provides an epoxy resin composition for a semiconductor encapsulant using a non-halogen flame retardant of zinc borate and a polyhedral oligomeric silsesquioxane (POSS) that is a silicon compound to solve the problems of the prior art as described above. do.

즉, 본 발명은 에폭시 수지, 경화제, 경화촉진제, 난연제, 변성실리콘 오일 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제로서 화학식 1로 표시되는 징크 보레이트와 화학식 2로 표시되는 POSS(polyhedral oligomeric silsesquioxane)을 병용하여 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공한다. That is, the present invention relates to an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, a flame retardant, a modified silicone oil, and an inorganic filler, wherein the flame retardant is zinc borate represented by Formula 1 and polyhedral oligomeric represented by Formula 2 It provides an epoxy resin composition for sealing a semiconductor device, characterized by using in combination with silsesquioxane).                         

[화학식 1][Formula 1]

Figure 112003024234169-pat00003
Figure 112003024234169-pat00003

[화학식 2][Formula 2]

Figure 112003024234169-pat00004
Figure 112003024234169-pat00004

상기식에서 R은 페닐기(phenyl group)이다.
In which R is a phenyl group.

본 발명을 보다 구체적으로 설명하기로 한다.The present invention will be described in more detail.

본 발명은 1) 에폭시 수지, 2) 경화제, 3) 비할로겐계 난연제, 4) 경화촉진제, 5) 변성실리콘 오일, 6) 무기충전제를 필수 성분으로 함유하는 것을 특징으로 하는 에폭시 수지 조성물이다.
The present invention is an epoxy resin composition comprising 1) an epoxy resin, 2) a curing agent, 3) a non-halogen flame retardant, 4) a curing accelerator, 5) a modified silicone oil, and 6) an inorganic filler as essential components.

본 발명의 성분 1)인 에폭시 수지는 전체 조성물중 3.5 - 15중량% 사용한다.The epoxy resin as component 1) of the present invention is used in an amount of 3.5 to 15% by weight in the total composition.

통상의 에폭시 당량이 150~250인 바이페닐 에폭시 수지와 에폭시당량이 170~230인 오르소 크레졸 노볼락 에폭시 수지 단독 및 2가지 에폭시 수지를 병용 사용할 수 있다. A biphenyl epoxy resin having an ordinary epoxy equivalent of 150 to 250 and an ortho cresol novolac epoxy resin having an epoxy equivalent of 170 to 230 alone and two epoxy resins can be used in combination.                     

본 발명에 사용된 성분 2)인 경화제로서는 2개 이상의 수산기를 갖고 수산기 당량이 100 - 200인 통상의 페놀 노볼락 수지, 크레졸 노볼락 수지, 자일록(Xylok) 수지, 디사이클로펜타디엔 수지 등이 사용될 수 있으며, 이를 단독 또는 2종류이상 병행하여 사용할 수 있다. 그러나 가격 및 성형성의 관점에서 페놀 노볼락형 수지를 경화제 전체의 50 중량% 이상 사용하는 것이 바람직하다. 에폭시 수지와 경화제의 조성비는 수산기 당량에 대한 에폭시 당량이 0.8 - 1.2 인 것이 좋으며, 또한 경화제의 사용량은 전체 조성물에 대하여 2.0 - 10.5 중량% 사용하는 것이 바람직하다.
As the curing agent of component 2) used in the present invention, conventional phenol novolac resins, cresol novolac resins, Xylok resins, dicyclopentadiene resins, etc. having two or more hydroxyl groups and having a hydroxyl group equivalent of 100 to 200 include It can be used and it can be used individually or in combination of 2 or more types. However, from the viewpoint of price and moldability, it is preferable to use at least 50% by weight of the phenol novolac-type resin as a whole of the curing agent. As for the composition ratio of an epoxy resin and a hardening | curing agent, it is preferable that the epoxy equivalent is 0.8-1.2 with respect to the hydroxyl equivalent, and it is preferable to use 2.0-10.5 weight% of hardening agents with respect to the whole composition.

본 발명에 사용된 성분 3)인 비할로겐계 난연제는 하기 화학식 1로 표시되는 징크보레이트와 하기 화학식 2로 표시되는 POSS(Ⅱ)를 병용하여 에폭시 수지 조성을 얻었다.The non-halogen-based flame retardant of component 3) used in the present invention was obtained by using a zinc borate represented by the following formula (1) and POSS (II) represented by the following formula (2) in combination.

[화학식 1][Formula 1]

Figure 112003024234169-pat00005
Figure 112003024234169-pat00005

[화학식 2][Formula 2]

Figure 112003024234169-pat00006
Figure 112003024234169-pat00006

상기식에서 R은 페닐기이다.In which R is a phenyl group.

본 발명에 있어서 적용된 징크보레이트(zinc borate)는 화학식 1과 같은 구조를 가진 화합물로서 녹는점이 260℃로서 내열성, 전기특성, 내습성이 우수하며 고온에서 탈수반응이 일어나면서 흡열현상이 보이며 530J/g의 흡열량에 의해 난연 효과가 크게 나타낸다. 또한 분해된 연소물이 안정적인 탄소층(char)를 형성하여 기존 할로겐계 난연제보다 뛰어난 난연 효과가 나타난다. 본 발명에 적용된 POSS(polyhedral oligomeric silsesquioxane)는 화학식 2와 같은 구조를 가지고 있으며 실리카와 실리콘의 혼성 중합체로서 크기가 1~3㎚인 나노 구조의 화합물로 내열성, 내습성, 유동성이 뛰어나며 550℃에서 열분해에 의해 표면에 탄소층(char)을 형성함으로서 난연성을 가지게 된다. 징크보레이트(zinc borate)와 POSS(polyhedral oligomeric silsesquioxane)의 수지 조성물에 사용되는 함량은 전체 수지 조성물에 대하여 징크보레이트(zinc borate)는 0.5 ~ 6중량% 이며 POSS (polyhedral oligomeric silsesquioxane)의 사용량은 전체 수지 조성물중 0.5 ~ 3중량%가 적합하다. 징크보레이트가 0.5중량% 미만으로 사용될 경우 난연 효과를 얻기 어려운 문제점이 있고, 6중량%을 초과하여 사용될 경우 유동성이 좋지 않아서 반도체 조립시 성형불량이 발생할 가능성이 많은 문제점이 있다. POSS가 0.5중량% 미만으로 사용될 경우 난연효과를 얻기 어려운 문제점이 있고, 6중량%을 초과하여 사용될 경우 불필요한 원가 상승의 원인이 된다.
Zinc borate applied in the present invention (zinc borate) is a compound having a structure as shown in Formula 1, the melting point of 260 ℃ excellent heat resistance, electrical properties, moisture resistance and the dehydration reaction occurs at high temperature, the endothermic phenomenon is seen 530J / g The flame retardant effect is large by the endothermic amount of. In addition, the decomposed combustion products form a stable carbon layer (char), resulting in an excellent flame retardant effect than conventional halogen-based flame retardants. POSH (polyhedral oligomeric silsesquioxane) applied to the present invention has a structure as shown in formula (2) and is a hybrid of silica and silicon nanostructured compound having a size of 1 ~ 3nm with excellent heat resistance, moisture resistance, fluidity and thermal decomposition at 550 ℃ By forming a carbon layer (char) on the surface it becomes flame retardant. The content of zinc borate and polyphosphed oligomeric silsesquioxane (POSS) is 0.5 to 6% by weight based on the total resin composition. 0.5-3% by weight of the composition is suitable. When the zinc borate is used in less than 0.5% by weight is difficult to obtain a flame retardant effect, when used in excess of 6% by weight there is a problem that there is a lot of problems that the molding defects occur when the semiconductor assembly is poor. If POSS is used in less than 0.5% by weight, there is a problem that difficult to obtain a flame retardant effect, when used in excess of 6% by weight causes unnecessary cost rise.

본 발명에 사용된 성분 4)인 경화 촉진제는 상기 1)과 2) 성분의 경화 반응 을 촉진하기 위해 필요한 성분으로, 예를 들어 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있으며 이 중 1종 또는 2종 이상을 병용해도 좋으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 - 0.3 중량%가 좋다.
As the component 4) used in the present invention, the curing accelerator is a component necessary for promoting the curing reaction of the components 1) and 2), for example, benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri ( Tertiary amines such as dimethylaminomethyl) phenol, imidazoles such as 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine, phenylphosphine, tetra Tetraphenylboron salts such as phenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, and the like, and may be used alone or in combination of two or more thereof. Is good.

본 발명에 사용된 성분 5)인 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.05 - 1.5 중량% 사용할 수 있다. 다만, 실리콘 오일을 1.5 중량% 이상 초과하여 사용시는 표면 오염이 발생하기 쉽고 레진 블리드가 길어질 우려가 있으며 0.05 중량% 미만으로 사용시에는 충분한 저탄성률을 얻을 수가 없게 된다.
As the modified silicone oil which is component 5) used in the present invention, a silicone polymer having excellent heat resistance is preferred, and silicone oil having an epoxy functional group, silicone oil having an amine functional group, silicone oil having a carboxyl functional group, etc. It can be mixed and used 0.05-1.5 weight% with respect to the whole epoxy resin composition. However, when the silicon oil is used in excess of 1.5% by weight or more, surface contamination is likely to occur, and the resin bleed may be long, and when used at less than 0.05% by weight, sufficient low modulus of elasticity may not be obtained.

본 발명에 사용된 성분 6)인 무기 충전제는 그 평균입자가 0.1 - 35.0㎛인 용융 또는 합성 실리카를 사용하는 것이 바람직하며, 충전량은 조성물 전체에 대해 70~90중량% 사용하여야 한다. 70 중량% 이하로 무기충전제를 사용할 경우에는 충분한 강도와 저열 팽창화를 실현할 수 없으며 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이 된다. 또한, 무기 충전제의 충전량이 90중량% 이상은 유동특성의 저하로 인한 성형성이 나빠질 우려가 있다.Inorganic fillers of component 6) used in the present invention preferably use fused or synthetic silica having an average particle of 0.1-35.0 µm, and the amount of the filler should be 70 to 90% by weight based on the total composition. When the inorganic filler is used in an amount of 70% by weight or less, sufficient strength and low thermal expansion cannot be realized, and moisture penetration is facilitated, which is fatal to reliability characteristics. In addition, when the amount of the inorganic filler is 90% by weight or more, the moldability may be deteriorated due to the deterioration of the flow characteristics.

또한 본 발명의 조성물에는 본 발명의 목적을 해하지 않는 범위에서 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본 블랙, 유·무기 염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제 등을 필요에 따라 사용할 수 있다.
In the composition of the present invention, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, coloring agents such as carbon black, organic and inorganic dyes, epoxy silanes, amino silanes, alkyl silanes, and the like, without departing from the object of the present invention. A coupling agent etc. can be used as needed.

이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융 혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다.As a general method for producing an epoxy resin composition using the raw materials as described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rodige mixer, followed by melt kneading with a roll mill or a kneader, and cooling and pulverizing. A method of obtaining the final powder product is used.

본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션 (Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형가능하다.
As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, or an injection molding method or a casting method may be used.

이하 본 발명을 실시예에 의거 상세히 설명하나, 본 발명이 실시예에 의해 한정되는 것은 아니다.
Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.

실시예 1-3Example 1-3

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다.To prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing.

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해, MQFP형 반도체 소자 성형시에는 MPS(Multi Plunger System)성형기를 이용하여 175(℃)에서 60초간 성형시킨 후, 175℃에서 6시간동안 후경화시켜, MQFP형 반도체 소자를 제작하였다.The epoxy resin composition thus obtained was evaluated for physical properties and reliability by the following method, and for the reliability test, when molding an MQFP-type semiconductor device, molding was performed at 175 ° C. for 60 seconds using an MPS (Multi Plunger System) molding machine. After making it cure after cure at 175 degreeC for 6 hours, the MQFP type | mold semiconductor element was produced.

본 발명에 의한 에폭시수지 조성물의 물성 및 난연성, 신뢰성, 성형성 시험결과를 표-2에 나타내었다. 신뢰성 시험은 열충격 시험에서의 팩키지크랙 발생정도로 나타내었다.
Physical properties and flame retardancy, reliability and moldability test results of the epoxy resin composition according to the present invention are shown in Table-2. The reliability test was expressed as the degree of package crack occurrence in the thermal shock test.

* 물성평가 방법  * Property evaluation method

1) 스파이럴 플로우(Spiral Flow)  1) Spiral Flow

EMMI규격을 기준으로 금형을 제작하여 성형온도(175℃), 성형압력 70Kgf/cm2에서 유동길이를 평가하였다.   Molds were manufactured based on the EMMI standard to evaluate the flow length at molding temperature (175 ℃) and molding pressure of 70Kgf / cm2.

2) 유리전이온도(Tg)  2) Glass transition temperature (Tg)

TMA(Thermomechanical Analyser)로 평가하였다.   It was evaluated by TMA (Thermomechanical Analyser).

3) 열팽창계수(α1)  3) coefficient of thermal expansion (α1)

ASTM D696에 의해 평가하였다.   Evaluation was made by ASTM D696.

4) 전기 전도도   4) electrical conductivity                     

경화된 EMC 시험편을 분쇄기에서 약 #400MESH ~ #100MESH의 입자크기로 분쇄하고 분말화한 시료 2g± 0.2㎎을 평량하여 추출용 병에 넣어서 증류수 80CC를 넣고 100 ℃ OVEN 내에서 24시간 추출한 다음 추출수의 상등액을 이용하여 전기전도도를 측정하였다.The cured EMC test piece was crushed to a particle size of about # 400MESH to # 100MESH in a grinder, and weighed 2g ± 0.2mg of the powdered sample into an extraction bottle, put 80CC of distilled water, and extract it for 24 hours in 100 ℃ OVEN. Electrical conductivity was measured using the supernatant.

5) 난연성  5) Flame retardant

UL 94 V-0 규격에 준하여 평가하였다.It evaluated according to UL 94 V-0 standard.

6) 내크랙성 평가(신뢰성 시험)  6) Crack resistance evaluation (reliability test)

프리컨디션(Precondition)후 열충격 환경시험기(Temperature Cycle Test)에서 1,000싸이클 경과 후, 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)로 크랙발생유무를 평가하였다.After pre-condition, after 1,000 cycles in a thermal shock environment tester (Temperature Cycle Test), the occurrence of cracking was evaluated by a non-destructive tester SAT (Scanning Acoustic Tomograph).

a) 프리컨디션 조건   a) preconditions

에폭시 수지조성물로 제조한 SOJ형 반도체 소자를 125℃에서 24시간 건조시킨후, 5싸이클의 열충격 시험을 거쳐 다시 85℃/85% 상대습도 조건하에서 168시간 동안 방치시킨 후 235℃,10초 동안 IR 리플로우를 3회 통과시켜 1차로 프리컨디션 조건하에서의 패케이지 크랙발생 유무를 평가하였다. 이 단계에서 크랙이 발생되었을 경우, 다음 단계인 1,000싸이클의 열충격 시험은 진행하지 않았다.SOJ-type semiconductor device made of epoxy resin composition was dried at 125 ° C for 24 hours, and then subjected to 5 cycles of thermal shock test, and then left for 168 hours under 85 ° C / 85% relative humidity condition and then IR at 235 ° C for 10 seconds. Three passes through the reflow were used to evaluate the presence of package cracks under precondition conditions. If cracks occurred at this stage, the next stage of thermal shock testing of 1,000 cycles was not conducted.

b) 열충격 시험   b) thermal shock test

앞에서의 프리컨디션 조건을 통과한 반도체 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1싸이클로하여 1,000싸이클을 진행한 후, 비파괴 검사기인 SAT를 이용하여 내부 및 외부 크랙을 평가하였다. After 1,000 cycles, the semiconductor package that passed the preconditions was left for 10 minutes at -65 ° C, 5 minutes at 25 ° C, and 10 minutes at 150 ° C for 1 cycle. And external cracks were evaluated.                     

비교예 1-2Comparative Example 1-2

다음 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다.
As shown in Table 1, each component was weighed to a given composition to prepare an epoxy resin composition in the same manner as in Example, and the results of evaluation of physical properties and reliability are shown in Table 2.

구성성분 (단위:중량%) Ingredient (Unit: wt%)                                              실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예1Comparative Example 1 비교예2Comparative Example 2 에폭시 수지Epoxy resin 14.6 14.6                                              14.614.6 14.614.6 14.614.6 14.614.6 14.614.6 경화제Hardener 7.58 7.58                                              7.587.58 7.587.58 7.587.58 7.587.58 7.587.58 난연제Flame retardant 징크 보레이트 Zinc borate                                              66 0.50.5 33 __ __ 브롬화에폭시수지 Brominated epoxy resin                                              -- -- -- 1.51.5 1One POSS POSS                                              0.50.5 33 0.50.5 -- -- Sb203 Sb203                                              -- -- -- 1One 1.51.5 경화촉진제 Curing accelerator                                              0.270.27 0.270.27 0.270.27 0.270.27 0.270.27 실리카 Silica                                              7070 7373 7373 7474 7474 변성실리콘오일 Modified silicone oil                                              0.10.1 0.10.1 0.10.1 0.10.1 0.10.1 γ-글리시톡시 프로필트리메톡시실란 γ-glycithoxy propyltrimethoxysilane                                              0.430.43 0.430.43 0.430.43 0.430.43 0.430.43 카본블랙 Carbon black                                              0.270.27 0.270.27 0.270.27 0.270.27 0.270.27 카르나우바왁스 Carnauba Wax                                              0.250.25 0.250.25 0.250.25 0.250.25 0.250.25 합계 Sum                                              100100 100100 100100 100100 100100

*에폭시 수지(국도화학社, YDCN-500-7P)* Epoxy resin (Kukdo Chemical, YDCN-500-7P)

*경화제(코오롱화학社, KPH-2001) * Hardening agent (Kolong Chemical Co., KPH-2001)                     

*경화 촉진제(HOKKO社, TPP)* Hardening accelerator (HOKKO, TPP)

*변성실리콘 오일(Dow Corning Toray 社, SF-8421EG) Modified silicone oil (Dow Corning Toray, SF-8421EG)

평가항목 Evaluation item                                              실시예1Example 1 실시예2Example 2 실시예3Example 3 비교예1Comparative Example 1 비교예2Comparative Example 2 스파이럴 플로우(inch) Spiral Flow (inch)                                              3232 3535 3434 3232 3535 Tg(℃) Tg (℃)                                              167167 167167 165165 153153 154154 전기전도도(㎲/㎝) Electrical Conductivity (㎲ / ㎝)                                              3131 3232 3232 3535 3232 굴곡강도(kgf/nm2 at 240℃) Flexural Strength (kgf / nm 2 at 240 ℃) 1313 1313 1313 1414 1313 굴곡탄성율(kgf/nm2 at 240℃) Flexural modulus (kgf / nm 2 at 240 ℃) 14401440 14501450 14441444 14401440 14421442 난연성Flame retardant UL 94 V-0 UL 94 V-0                                              V-0V-0 V-0V-0 V-0V-0 V-0V-0 V-0V-0 신뢰성responsibility 내크랙성 평가 (열충격 시험) 크랙발생수 Cracking resistance evaluation (thermal shock test)                                              00 00 00 1One 00 총시험한 반도체소자수 Total number of semiconductor devices tested                                              300300 300300 300300 300300 300300 성형성Formability 보이드 발생갯수 (Visual Inspection) Void occurrence number (Visual Inspection)                                              00 00 00 00 1One 총시험한 반도체소자수 Total number of semiconductor devices tested                                              300300 300300 300300 300300 300300

상기 표 2에 나타난 바와같이 본 발명에 의한 수지조성물이 기존의 비교예에 비하여 난연성을 확보하면서도 신뢰성 및 성형성면에서도 뒤떨어지지 않는 특성을 나타내고 있음을 알 수 있다.
As shown in Table 2, it can be seen that the resin composition according to the present invention exhibits characteristics that are inferior in terms of reliability and formability while securing flame retardancy compared to the conventional comparative examples.

본 발명의 수지 조성물은 할로겐이 함유되지 않은 난연성 반도체 봉지제용 에폭시 수지 조성물로서 난연성이 확보되고 신뢰성 및 성형성면에서도 뒤떨어지지 않는 에폭시 수지 조성물을 제공한다.The resin composition of the present invention is an epoxy resin composition for a flame-retardant semiconductor encapsulant containing no halogen, which provides an epoxy resin composition which is flame retardant and inferior in reliability and moldability.

Claims (3)

1) 에폭시 수지 3.5 - 15 중량%; 1) 3.5-15 wt% epoxy resin; 2) 경화제 2.0 - 10.5 중량%;2) 2.0-10.5 weight percent of hardener; 3) 경화촉진제 0.1 - 0.3 중량%;3) 0.1-0.3 wt% of a curing accelerator; 4) 난연제로서 화학식 1로 표시되는 징크 보레이트 0.5 - 6 중량% 및 화학식 2로 표시되는 POSS(polyhedral oligomeric silsesquioxane) 0.5 - 3 중량%;4) 0.5-6% by weight of zinc borate represented by formula (1) and 0.5-3% by weight of polyhedral oligomeric silsesquioxane (POSS) represented by formula (2) as a flame retardant; 5) 변성실리콘 오일 0.05 - 1.5 중량%; 및5) 0.05-1.5% by weight of modified silicone oil; And 6) 무기 충전제 70 - 90 중량%를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.6) An epoxy resin composition for sealing a semiconductor device, comprising 70 to 90% by weight of an inorganic filler.
Figure 112005058485289-pat00007
Figure 112005058485289-pat00007
Figure 112005058485289-pat00008
Figure 112005058485289-pat00008
상기식에서 R은 페닐기이다.In which R is a phenyl group.
삭제delete 제 1항에 있어서, 상기 경화제로서 2개 이상의 수산기를 갖고 수산기 당량이 100~200인 통상의 페놀 노볼락 수지, 크레놀 노볼락 수지, 자일록 수지, 디시클로펜타디엔 수지 등이 단독 또는 2이상을, 상기 경화촉진제는 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀을 포함하는 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀을 포함하는 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트를 포함하는 테트라페닐보론염 중 1종이상을, 상기 변성 실리콘 오일은 실리콘 중합체, 실리콘 오일 또는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일을 1종 이상 혼합하여 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.A conventional phenol novolak resin, a creol novolak resin, a xyloc resin, a dicyclopentadiene resin, etc., according to claim 1, having two or more hydroxyl groups as the curing agent, and having a hydroxyl equivalent of 100 to 200, alone or in combination of two or more. The curing accelerators include tertiary amines including benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-methylimidazole, 2-phenylimidazole, and the like. One of tetraphenylboron salts including imidazole, triphenylphosphine, diphenylphosphine, organic phosphine containing phenylphosphine, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate Above, the modified silicone oil is characterized by using a silicone polymer, silicone oil or silicone oil and a silicone oil having a carboxyl functional group by mixing at least one. The epoxy resin composition for sealing semiconductor elements.
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