KR100739363B1 - Epoxy resin for packaging semiconductor device - Google Patents

Epoxy resin for packaging semiconductor device Download PDF

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KR100739363B1
KR100739363B1 KR1020050091006A KR20050091006A KR100739363B1 KR 100739363 B1 KR100739363 B1 KR 100739363B1 KR 1020050091006 A KR1020050091006 A KR 1020050091006A KR 20050091006 A KR20050091006 A KR 20050091006A KR 100739363 B1 KR100739363 B1 KR 100739363B1
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epoxy resin
weight
curing agent
resin composition
formula
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KR1020050091006A
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Korean (ko)
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KR20070016049A (en
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김조균
노건배
박윤곡
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제일모직주식회사
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Priority to KR1020050091006A priority Critical patent/KR100739363B1/en
Priority to CN2005800502257A priority patent/CN101208386B/en
Priority to PCT/KR2005/003995 priority patent/WO2007015591A1/en
Priority to US11/496,449 priority patent/US7825528B2/en
Priority to JP2006210947A priority patent/JP4567641B2/en
Publication of KR20070016049A publication Critical patent/KR20070016049A/en
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/02Polycondensates containing more than one epoxy group per molecule
    • C08G59/04Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof
    • C08G59/06Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
    • C08G59/24Di-epoxy compounds carbocyclic
    • C08G59/245Di-epoxy compounds carbocyclic aromatic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04Epoxynovolacs
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C09J163/04Epoxynovolacs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic

Abstract

본 발명은 패키지의 휨 특성 및 내리플로성(reflow-resistant property)이 양호하며, 우수한 성형성을 가지는 반도체 봉지재용 에폭시 수지 조성물에 관한 것으로서, 에폭시 수지, 경화제, 비할로겐계 난연제 및 무기 충전제를 포함하여 이루어지는 에폭시 수지 조성물에 있어서, 에폭시 수지로서 분자 중에 비페닐 유도체를 포함하는 노볼락 구조의 페놀류 화합물과 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 생성되는 변성 에폭시 수지 0.5 내지 15중량%; 경화제로서 다방향족 경화제와 다관능성 경화제의 혼합물 2 내지 10.5중량%; 무기 충전제로서 53㎛ 이상의 크기를 갖는 입자의 중량비가 0.3 중량% 이하이면서 구형화도가 0.85 이상인 구형실리카를 80 내지 93 중량%를 포함하여 이루어짐을 특징으로 한다.The present invention relates to an epoxy resin composition for a semiconductor encapsulant having good bending property and reflow-resistant property and excellent moldability, and includes an epoxy resin, a curing agent, a non-halogen-based flame retardant, and an inorganic filler. Epoxy resin composition comprising a modified epoxy resin produced by glycidyl etherification of a mixture of a phenolic compound having a novolak structure and a 4,4'-dihydroxy biphenyl containing a biphenyl derivative in a molecule as an epoxy resin. 0.5 to 15 weight percent; 2 to 10.5% by weight of a mixture of a polyaromatic curing agent and a polyfunctional curing agent as a curing agent; It is characterized in that the inorganic filler comprises 80 to 93% by weight of the spherical silica having a sphericity of 0.85 or more while the weight ratio of particles having a size of 53㎛ or more and less than 0.3% by weight.

에폭시 수지, 비페닐 유도체, 노볼락 구조, 글리시딜 에테르화, 변성 에폭시 수지, 무기 충전제 Epoxy resins, biphenyl derivatives, novolac structures, glycidyl etherifications, modified epoxy resins, inorganic fillers

Description

반도체 소자 밀봉용 에폭시 수지 조성물{Epoxy resin for packaging semiconductor device}Epoxy resin composition for semiconductor device sealing

본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로서, 보다 상세하게는 할로겐 난연제를 함유하지 않고도 우수한 난연성을 가지며 패키지의 휨 특성 및 내리플로성(reflow-resistant property)이 양호하고 박형 패키지에서도 성형성이 우수한 반도체 봉지재용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing a semiconductor device, and more particularly, has excellent flame retardancy without containing a halogen flame retardant, good bending property and reflow-resistant property, and moldability even in a thin package. It is related with this excellent epoxy resin composition for semiconductor sealing materials.

최근 주목을 받고 있는 표면 실장형의 BGA(Ball Grid Array)형 패키지는 편면 포장 구조이기 때문에 열선팽창률의 비대칭성으로 인하여 패키지(package)의 휘어짐이 발생하기 쉽다는 문제가 있었다. 이와 마찬가지로 BOC(Board On Chip) 및 MCP(Multi Chip Package)와 같이 새로이 등장한 패키지에서도 상하 구조의 비대칭성으로 인하여 휨 특성의 개선이 요구되고 있다. 특히, BOC 및 MCP 패키지와 같은 신규 패키지에서는 봉지재가 차지하는 부분의 두께가 백여 미크론까지 얇아지기도 하는데, 이로 인해 패키지 밀봉 시 기공이 생기거나 불완전 성형이 일어나는 등의 성형 불량이 빈번히 발생하고 있다. 또한 최근 환경에 대한 관심이 높아짐으로써, 반도체 패키지(package)의 실장 등에서 납을 제거한 용접 방법이 적용되고 있는데, 반도체 패키지(package) 분야에서 사용 가능한 대부분의 용접은 종래의 납을 포함하는 용접에 비하여 융점이 높기 때문에 리플로(Reflow) 온도가 상당히 높아진다. 이로 인하여 패키지(package)의 신뢰도가 저하되는 문제가 발생하는데 따라서 이를 방지할 수 있는 내리플로성의 향상이 요구된다.Surface-mounted BGA (Ball Grid Array) type package, which has recently attracted attention, has a problem that the package is easily bent due to the asymmetry of the coefficient of thermal expansion due to the single-sided packaging structure. Similarly, new packages such as BOC (Board On Chip) and MCP (Multi Chip Package) are required to improve the bending characteristics due to the asymmetry of the vertical structure. In particular, in new packages such as BOC and MCP packages, the portion occupied by the encapsulant may be thinned to about 100 microns, which causes frequent molding defects such as porosity or incomplete molding when the package is sealed. In addition, due to the recent increase in environmental concern, a welding method in which lead-free welding has been applied to mounting of a semiconductor package has been applied, and most of the welding available in the semiconductor package field has been compared to conventional welding containing lead. Because of the high melting point, the reflow temperature is significantly higher. This causes a problem that the reliability of the package (package) is deteriorated, so the improvement of downflow that can prevent this is required.

본 발명의 목적은 할로겐계 난연제 및 인계난연제를 사용하지 않고 우수한 내리플로성을 유지하면서 비대칭 편면 포장 구조의 휘어짐을 개선하고, BGA 패키지에서는 물론 BOC 및 MCP와 같은 박형 패키지에서도 뛰어난 성형성을 나타내는 반도체 봉지재용 에폭시 수지 조성물을 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to improve the bending of an asymmetric single-sided packaging structure while maintaining excellent downflow without using halogen-based flame retardants and phosphorus-based flame retardants, and to exhibit excellent moldability in thin packages such as BOC and MCP as well as BGA packages. It is providing the epoxy resin composition for sealing materials.

본 발명에 의하면, 에폭시 수지, 경화제 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 에폭시 수지로서 하기 화학식 1로 표시되는 분자 중에 비페닐기를 포함하는 노볼락 구조의 페놀류 화합물과 하기 화학식 2로 표시되는 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 생성되는 변성 에폭시 수지 0.5 내지 15중량%; 경화제로서 하기 화학식 3으로 표시되는 다방향족 경화제와 화학식 4로 표시되는 다관능성 경화제의 혼합물 2 내지 10.5중량%; 무기충전제로서 용융 실리카, 합성 실리카 혹은 이들의 혼합물을 80 내지 93 중량%를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물이 제공된다.According to the present invention, an epoxy resin composition comprising an epoxy resin, a curing agent, and an inorganic filler, which is represented by the phenolic compound having a binovolak structure containing a biphenyl group in a molecule represented by the following general formula (1) as an epoxy resin and the following general formula (2) 0.5 to 15% by weight of a modified epoxy resin produced by glycidyl etherification of a mixture of 4,4'-dihydroxy biphenyl; 2 to 10.5% by weight of a mixture of the polyaromatic curing agent represented by the following formula (3) and the polyfunctional curing agent represented by the formula (4) as the curing agent; Provided is an epoxy resin composition for sealing a semiconductor device comprising 80 to 93% by weight of fused silica, synthetic silica or a mixture thereof as an inorganic filler.

[화학식 1][Formula 1]

Figure 112005054938457-pat00001
Figure 112005054938457-pat00001

(n의 평균치는 1 내지 6)(mean value of n is 1 to 6)

[화학식 2][Formula 2]

Figure 112005054938457-pat00002
Figure 112005054938457-pat00002

[화학식 3][Formula 3]

Figure 112005054938457-pat00003
Figure 112005054938457-pat00003

(n의 평균치는 1 내지 6)(mean value of n is 1 to 6)

[화학식 4][Formula 4]

Figure 112007022941537-pat00013
Figure 112007022941537-pat00013

(n의 평균치는 1 내지 6) (mean value of n is 1 to 6)

상기 화학식 3의 구조를 가진 다방향족 경화제와 상기 화학식 4의 구조를 가지는 다관능성 경화제는 20:80 내지 60:40의 중량비로 혼합된 것을 특징으로 한다.The multi-aromatic curing agent having the structure of Formula 3 and the multifunctional curing agent having the structure of Formula 4 is characterized in that the mixture in a weight ratio of 20:80 to 60:40.

상기 무기 충전재는 그 평균입자가 8.7 내지 14.9㎛이며, 입자 분포는 3㎛ 이하의 누적 중량비가 15.4 내지 23.4 중량%, 24㎛ 이하의 누적 중량비가 66.9 내지 84.3 중량%, 53㎛ 이상의 크기를 갖는 입자의 중량비가 0.3 중량% 이하이며, 평균 구형화도가 0.85 이상인 것을 특징으로 한다.The inorganic filler has an average particle size of 8.7 to 14.9 μm, and a particle size distribution of particles having a cumulative weight ratio of 3 μm or less, 15.4 to 23.4 wt%, a cumulative weight ratio of 24 μm or less, 66.9 to 84.3 wt%, and 53 μm or more. Weight ratio of It is 0.3 weight% or less, It is characterized by the average sphericity degree 0.85 or more.

이하 본 발명을 보다 구체적으로 설명하기로 한다.Hereinafter, the present invention will be described in more detail.

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 1) 에폭시 수지, 2) 경화제 및 3) 무기 충전제들을 포함하여 이루어짐을 특징으로 한다.The epoxy resin composition for sealing a semiconductor device of the present invention is characterized by comprising 1) an epoxy resin, 2) a curing agent and 3) inorganic fillers.

본 발명에서 상기 1)의 에폭시 수지로는 하기 화학식 1로 표시되는 분자 중에 비페닐(biphenyl) 기를 포함하는 노볼락 구조의 페놀류 화합물과 하기 화학식 2로 표시되는 4,4'-디히드록시 비페닐(dihydroxy biphenyl)의 혼합물(이하 페놀 혼합물)을 글리시딜 에테르화시켜 생성되는 다방향족 변성 에폭시 수지를 사용한다.In the present invention, the epoxy resin of 1) is a phenolic compound having a novolac structure containing a biphenyl group in a molecule represented by the following formula (1) and 4,4'-dihydroxy biphenyl represented by the following formula (2) A polyaromatic modified epoxy resin produced by glycidyl etherification of a mixture of (dihydroxy biphenyl) (hereinafter phenol mixture) is used.

[화학식 1][Formula 1]

Figure 112005054938457-pat00005
Figure 112005054938457-pat00005

(n의 평균치는 1 내지 6)(mean value of n is 1 to 6)

[화학식 2][Formula 2]

Figure 112005054938457-pat00006
Figure 112005054938457-pat00006

본 발명에서 사용된 성분 1)인 다방향족 변성 에폭시 수지는 페놀 골격을 근간으로 해서 중간에 비페닐을 포함하는 구조를 하고 있기 때문에, 흡습성, 인성, 내산화성이 우수하며, 또한 내크랙성도 우수하다. 본 발명에서 적용된 상기 변성 다방향족 에폭시 수지는 가교 밀도가 낮아서 고온에서 연소 시 탄소층(char)을 형성하여 난연성을 확보하게 된다. 본 발명에서 적용된 상기 다방향족 에폭시 수지의 사용량은 전체 수지 조성물 중 0.5 내지 15 중량%가 적합하다.Since the polyaromatic modified epoxy resin which is component 1) used by this invention has a structure containing biphenyl in the middle based on a phenol skeleton, it is excellent in hygroscopicity, toughness, and oxidation resistance, and also excellent in crack resistance. . The modified multi-aromatic epoxy resin applied in the present invention has a low crosslinking density to form a carbon layer (char) during combustion at high temperature to ensure flame retardancy. The amount of the polyaromatic epoxy resin applied in the present invention is suitable for 0.5 to 15% by weight of the total resin composition.

본 발명에 사용된 성분 2)인 경화제로는 하기 화학식 3과 같은 구조를 갖는 다방향족 경화제와 하기 화학식 4와 같은 구조를 갖는 다관능성 경화제의 혼합물이 사용되며, 배합비는 20:80 내지 60:40 중량%가 바람직하다. 다방향족 경화제가 20 중량% 미만일 경우 난연특성을 확보하기가 어려우며, 60 중량% 초과일 경우는 유리전이온도(Tg)의 저하가 발생하여 휨 특성을 확보하기가 어렵게 되는 문제점이 있을 수 있다. As the curing agent of component 2) used in the present invention, a mixture of a polyaromatic curing agent having a structure such as the following Chemical Formula 3 and a polyfunctional curing agent having a structure such as the following Chemical Formula 4 is used, and the mixing ratio is 20:80 to 60:40. Weight percent is preferred. When the multi-aromatic curing agent is less than 20% by weight, it is difficult to secure flame retardant properties, and when it exceeds 60% by weight, the glass transition temperature (Tg) may be lowered to make it difficult to secure the bending property.

[화학식 3][Formula 3]

Figure 112005054938457-pat00007
Figure 112005054938457-pat00007

(n의 평균치는 1 내지 6)(average of n is 1 to 6)

[화학식 4][Formula 4]

Figure 112007022941537-pat00014
Figure 112007022941537-pat00014

(n의 평균치는 1 내지 6) (mean value of n is 1 to 6)

상기 화학식 3의 다방향족 경화제는 상기 다방향족 변성 에폭시수지와 반응하여 탄소층(char)을 형성하여 주변의 열 및 산소의 전달을 차단함으로써 난연성을 달성하게 된다. 경화제의 사용량은 전체 수지 조성물 중 2 내지 10.5 중량%가 적합하다.The multi-aromatic curing agent of Formula 3 is to react with the multi-aromatic modified epoxy resin to form a carbon layer (char) to achieve flame retardancy by blocking the transfer of heat and oxygen around. As for the usage-amount of a hardening | curing agent, 2-10.5 weight% of the whole resin composition is suitable.

본 발명에 사용된 성분 3)인 무기충전제는 용융 실리카, 합성 실리카 혹은 이들의 혼합물로서 그 평균입자가 8.7 내지 14.9㎛이며 입자 분포가 3㎛ 이하의 누적 중량비가 15.4 내지 23.4 중량%를 갖고, 24㎛ 이하의 누적 중량비가 66.9 내지 84.3 중량%를 가지며 53㎛ 이상의 크기를 갖는 입자의 중량비가 0.3 중량% 이하이면서 평균 구형화도가 0.85 이상인 것이 바람직하다. 53㎛ 이상인 입자의 양이 0.3 중량%를 초과하거나 평균 구형화도가 0.85 미만인 경우에는 좁은 틈을 갖는 박형 패키지의 특성으로 인해 성형 시 기공이 발생하거나 불완전 충진이 생길 수 있어서 성형성에 악영향을 미칠 수 있다.Inorganic filler, component 3) used in the present invention, is fused silica, synthetic silica, or a mixture thereof, having an average particle size of 8.7 to 14.9 µm and a cumulative weight ratio of 3 µm or less, having a cumulative weight ratio of 15.4 to 23.4 weight percent, 24 It is preferable that the cumulative weight ratio of not more than 6 mu m is 66.9 to 84.3 wt%, and the weight ratio of particles having a size of 53 mu m or more is 0.3 wt% or less and the average sphericity is 0.85 or more. If the amount of particles larger than 53㎛ exceeds 0.3% by weight or the average sphericity is less than 0.85, the characteristics of the thin package having a narrow gap may cause pores or incomplete filling during molding, which may adversely affect the formability. .

충전량은 조성물 전체에 대해 상기한 성분들 이외의 잔량으로서, 바람직하게는 80 내지 93 중량%를 사용한다. 80 중량% 미만으로 무기충전제를 사용할 경우에는 충분한 강도와 저열팽창화를 실현할 수 없게 되는 문제점이 있을 수 있으며, 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이 되게 되는 문제점이 있을 수 있다. 또한, 무기충전제의 충전량이 93 중량% 초과 시에는 유동특성의 저하로 인하여 성형성이 나빠지게 되는 문제점이 있을 수 있다. The filling amount is used as the remaining amount other than the above-mentioned components with respect to the whole composition, and preferably 80 to 93% by weight. When the inorganic filler is used in less than 80% by weight, there may be a problem in that it is impossible to realize sufficient strength and low thermal expansion, and also there may be a problem in which moisture is easily penetrated and becomes fatal in reliability characteristics. In addition, when the amount of the inorganic filler exceeds 93% by weight, there may be a problem in that moldability is deteriorated due to the deterioration of the flow characteristics.

본 발명에서는 경화촉진제가 더 사용될 수 있으며, 상기 경화촉진제는 상기 1)과 2)성분의 경화반응을 촉진하기 위해 필요한 성분으로, 예를 들어 벤질디메틸 아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있으며, 이 중 1종 또는 2종 이상을 병용해도 좋으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 내지 0.3 중량%가 바람직하다.In the present invention, a curing accelerator may be further used, and the curing accelerator is a component necessary for promoting the curing reaction of the components 1) and 2). For example, benzyldimethyl amine, triethanolamine, triethylenediamine, and dimethylaminoethanol. , Tertiary amines such as tri (dimethylaminomethyl) phenol, imidazoles such as 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine Tetraphenylboron salts such as pins, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, and the like, and one or two or more of them may be used in combination, and the amount of use thereof is 0.1 based on the total epoxy resin composition. To 0.3 wt% is preferred.

본 발명에서는 변성 실리콘 오일이 더 사용될 수 있으며, 상기 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며, 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.5 내지 1.5 중량%를 사용할 수 있다. 다만, 실리콘 오일을 1.5 중량% 이상 초과하여 사용 시에는 표면 오염이 발생하기 쉽고 레진 블리드가 길어지게 되는 문제점이 있을 수 있으며, 0.5 중량% 미만으로 사용 시에는 충분한 저탄성률을 얻을 수가 없게 되는 문제점이 있을 수 있다.In the present invention, a modified silicone oil may be further used. The modified silicone oil may be a silicone polymer having excellent heat resistance, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, and a silicone oil having a carboxyl functional group. Species or two or more kinds may be used in an amount of 0.5 to 1.5 wt% based on the total epoxy resin composition. However, when the silicon oil is used in excess of 1.5% by weight or more, there may be a problem in that surface contamination occurs easily and the resin bleed becomes long, and when used in less than 0.5% by weight, sufficient low modulus of elasticity may not be obtained. There may be.

또한, 본 발명의 성형재료에는 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제 등을 필요에 따라 사용할 수 있다.In the molding material of the present invention, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, colorants such as carbon black and inorganic dyes, coupling agents such as epoxy silanes, amino silanes, alkyl silanes, and the like may be used. Can be used.

이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융 혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다.As a general method for producing an epoxy resin composition using the raw materials as described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rodige mixer, followed by melt kneading with a roll mill or a kneader, and cooling and pulverizing. A method of obtaining the final powder product is used.

본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로서는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형 가능하다. As a method of sealing a semiconductor element using the epoxy resin composition obtained by this invention, the low pressure transfer molding method is the most commonly used method, It can also be shape | molded by the methods, such as injection molding method and casting.

이하 본 발명을 실시예에 의거 상세히 설명하나, 본 발명이 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.

[실시예 1 내지 3][Examples 1-3]

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융 혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다.To prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing.

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위해 MPS(Multi Plunger System) 성형기를 이용하여 175℃에서 70초간 성형시킨 후, 175℃에서 2시간 동안 후경화 시켜, BOC형 반도체 소자를 제작하였다.The epoxy resin composition thus obtained was evaluated for physical properties and reliability by the following method, and after molding for 70 seconds at 175 ℃ using a Multi-Plunger System (MPS) molding machine for a reliability test, after 2 hours at 175 ℃ It hardened | cured and the BOC type semiconductor element was produced.

본 발명에 의한 에폭시수지 조성물의 물성 및 성형성, 휨 특성, 신뢰성 시험 결과를 하기 표 2에 나타내었다. Physical properties and moldability, warpage characteristics, and reliability test results of the epoxy resin composition according to the present invention are shown in Table 2 below.

신뢰성 시험은 열충격 시험에서의 패키지 크랙 발생정도 및 PCT(Pressure Cooker Test) 흡습 후 전기적 특성의 불량정도로 나타내었다.Reliability test was expressed by the degree of package crack in thermal shock test and the degree of failure of electrical characteristics after PCT (Pressure Cooker Test) absorption.

* 물성평가 방법* Property evaluation method

1) 스파이럴 플로우(Spiral Flow)1) Spiral Flow

EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/㎠에서 유동길이를 평가하였다.Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.

2) 유리전이온도(Tg)2) Glass transition temperature (Tg)

TMA(Thermomechanical Analyser)로 평가하였다.It was evaluated by TMA (Thermomechanical Analyser).

3) 열팽창계수(α1)3) coefficient of thermal expansion (α1)

ASTM D696에 의해 평가하였다.Evaluation was made by ASTM D696.

4) 전기전도도4) Electrical Conductivity

경화된 EMC 시험편을 분쇄기에서 약 #100 내지 #400메쉬(MESH)의 입자크기로 분쇄하고 분말화한 시료 2g±0.2㎎을 평량하여 추출용 병에 넣어서 증류수 80CC를 넣고 100℃ OVEN 내에서 24시간 추출한 다음 추출수의 상등액을 이용하여 전기전도도를 측정하였다.The cured EMC test piece was ground in a grinder to a particle size of about # 100 to # 400 mesh (MESH), weighed 2g ± 0.2mg of the powdered sample, and put into 80 ml of distilled water. After extraction, the electrical conductivity was measured using the supernatant of the extract water.

5) 난연성5) Flame retardant

UL 94 V-0 규격에 준하여 평가하였다.It evaluated according to UL 94 V-0 standard.

6) 휨특성6) bending characteristics

봉지용 수지 조성물을 이용하고 175℃, 70초의 트랜스퍼 성형 및 175℃, 2시간의 후경화를 행하여 BOC 패키지(package)(48㎜×2㎜×1.1㎜)를 제작하고, 비접촉식 레이저(laser) 측정기에 의하여 측정하였다.A BOC package (48 mm x 2 mm x 1.1 mm) was produced by using a sealing resin composition, followed by transfer molding at 175 ° C and 70 seconds, and post-curing at 175 ° C and 2 hours, and a non-contact laser measuring instrument. Measured by

7) 내크랙성 평가(신뢰성 시험)7) Crack resistance evaluation (reliability test)

프리컨디션(Precondition) 후 열충격 시험기(Temperature Cycle Test)에서 1,000 사이클 경과 후, 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)로 크랙 발생유무 평가 및 PCT 240시간 방치 후 전기특성을 평가하였다.After 1,000 cycles in a thermal shock tester (Temperature Cycle Test) after precondition, the non-destructive tester SAT (Scanning Acoustic Tomograph) to evaluate the occurrence of cracks and to evaluate the electrical characteristics after leaving the PCT 240 hours.

a) 프리컨디션조건a) Precondition

에폭시 수지 조성물로 제조한 BOC형 반도체 소자를 125℃에서 24시간 건조시켜 5 사이클의 열충격 시험을 거치고 나서, 30℃, 70%상대습도 조건 하에서 96시간 동안 방치시킨 후 255℃, 10초 동안 IR 리플로를 1회 통과시키는 것을 2회 반복하는 프리컨디션 조건 하에서의 패키지 크랙발생 유무를 평가하였다. 이 단계에서 크랙이 발생되었을 경우, 다음 단계인 1,000 사이클의 열충격 시험은 진행하지 않았다.BOC-type semiconductor device made of epoxy resin composition was dried for 24 hours at 125 ° C. and subjected to 5 cycles of thermal shock test, and then left for 30 hours at 30 ° C. and 70% relative humidity condition for 96 hours, then IR ripple for 255 ° C. for 10 seconds. The presence of package cracking under the preconditioning condition of passing the furnace once through two repetitions was evaluated. If cracks occurred at this stage, the next stage, the 1,000 cycle thermal shock test, was not conducted.

b) 열충격 시험b) thermal shock test

상기 프리컨디션 조건을 통과한 반도체 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1 사이클로 하여 1,000 사이클을 진행한 후, 비파괴 검사기인 SAT를 이용하여 내부 및 외부 크랙을 평가하였다.After 1,000 cycles of the semiconductor package that passed the precondition conditions were left at -65 ° C. for 10 minutes, 25 ° C. for 5 minutes, and 150 ° C. for 10 minutes, the inside and the inside of the semiconductor package were analyzed using SAT, which is a non-destructive tester. External cracks were evaluated.

c) PCT (Pressure Cooker Test)c) Pressure Cooker Test

앞서의 프리컨디션 조건을 통과한 반도체 패키지를 121℃, 100% 상대습도 조건에서 240시간 동안 방치한 후, 전기특성을 평가하였다.After the semiconductor package that passed the precondition condition was left at 121 ° C. and 100% relative humidity for 240 hours, electrical characteristics were evaluated.

[비교예 1 및 2][Comparative Examples 1 and 2]

하기 표1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예 1과 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표2에 나타내었다.As shown in Table 1 below, each component was weighed in a given composition to prepare an epoxy resin composition in the same manner as in Example 1, and the results of evaluation of physical properties and reliability are shown in Table 2.

구 성 성 분 (단위 ; 중량%)Component Content (Unit: Weight%) 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예 1Comparative Example 1 비교예 2Comparative Example 2 에폭시 수지Epoxy resin 다방향족 변성 에폭시 수지 1) Multiaromatic Modified Epoxy Resin 1) 2.92.9 3.73.7 4.94.9 3.73.7 -- 비페닐 Biphenyl 4.14.1 1.51.5 2.12.1 2.92.9 6.96.9 경화제Hardener 다방향족 2) Multi-aromatic 2) 1.11.1 1.51.5 0.70.7 -- 3.23.2 다관능성 3) Multifunctional 3) 2.02.0 1.41.4 2.42.4 3.53.5 -- 실리카 함량Silica content 53㎛이상 비율53㎛ or more ratio 8888 0.030.03 9090 0.050.05 8888 0.100.10 8888 8.308.30 8888 0.100.10 구형화도Sphericity 0.850.85 0.880.88 0.880.88 0.850.85 0.710.71 경화촉진제Curing accelerator 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 난연제Flame retardant 0.80.8 0.80.8 0.80.8 0.80.8 0.80.8 γ-글리시톡시프로필트리메톡시실란γ-glycithoxypropyltrimethoxysilane 0.40.4 0.40.4 0.40.4 0.40.4 0.40.4 카본블랙Carbon black 0.20.2 0.20.2 0.20.2 0.20.2 0.20.2 카르나우바왁스Carnauba Wax 0.30.3 0.30.3 0.30.3 0.30.3 0.30.3 합 계Sum 100.00100.00 100.00100.00 100.00100.00 100.00100.00 100.00100.00

1) 화합물 (제조사: NIPPON KAYAKU 社, 상품명: CER-3000-L) 1) Compound (manufacturer: NIPPON KAYAKU, trade name: CER-3000-L)

2) 화학식 3의 화합물 2) a compound of formula 3

3) 화학식 4의 화합물 3) Compound of Formula 4

평 가 항 목Evaluation Item 실시예1Example 1 실시예2Example 2 실시예3Example 3 비교예1Comparative Example 1 비교예2Comparative Example 2 스파이럴 플로우(inch)Spiral Flow (inch) 4646 4040 4343 4444 4242 Tg(℃)Tg (℃) 148148 144144 152152 150150 128128 전기전도도(㎲/㎝)Electrical Conductivity (㎲ / ㎝) 1111 1010 1111 1212 1313 굴곡강도(kgf/㎟ at 35℃)Flexural Strength (kgf / ㎡ at 35 ℃) 1515 1616 1515 1616 1515 굴곡탄성율(kgf/ ㎟at 35℃)Flexural modulus (kgf / ㎡at 35 ℃) 22402240 22002200 22502250 24002400 23502350 난연성Flame retardant UL 94 V-0UL 94 V-0 V-0V-0 V-0V-0 V-0V-0 V-1V-1 V-1V-1 성형성Formability 보이드 발생갯수 (Visual Inspection)Void occurrence number (Visual Inspection) 00 00 00 167167 88 총시험한 반도체소자수Total number of semiconductor devices tested 2,8802,880 2,8802,880 2,8802,880 2,8802,880 2,8802,880 휨특성Flexural characteristics 휨도(㎛)Warpage Degree 152152 104104 170170 135135 307307 신뢰성responsibility 내크랙성 평가 (열충격시험) 크랙발생수Crack resistance evaluation (thermal shock test) 00 00 00 00 00 PCT 240시간 후 불량수Bad after 240 hours PCT 00 00 00 22 55 총시험한 반도체소자수Total number of semiconductor devices tested 360360 360360 360360 360360 360360

상기 표2에 나타난 바와 같이, 본 발명에 의한 수지 조성물이 기존의 비교예에 비하여 휨특성 및 신뢰성 면에서 우수하였고, 성형성 측면에서도 뛰어난 특성을 나타내고 있음을 확인할 수 있었다.As shown in Table 2, the resin composition according to the present invention was excellent in bending characteristics and reliability in comparison with the conventional comparative example, it was confirmed that the excellent properties in terms of formability.

따라서, 본 발명에 의하면 패키지의 휨 특성 및 내리플로성(reflow-resistant property)이 양호하면서 성형성이 우수한 반도체 봉지재용 에폭시 수지 조성물을 얻을 수 있는 효과가 있다. 이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Therefore, according to this invention, there exists an effect which can obtain the epoxy resin composition for semiconductor sealing materials which is excellent in moldability, with favorable bending property and reflow-resistant property of a package. Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (6)

에폭시 수지, 경화제 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 에폭시 수지로서 하기 화학식 1로 표시되는 분자 중에 비페닐기를 포함하는 노볼락 구조의 페놀류 화합물과 하기 화학식 2로 표시되는 4,4'-디히드록시 비페닐의 혼합물을 글리시딜 에테르화시켜 생성되는 변성 에폭시 수지 0.5 내지 15중량%;In the epoxy resin composition containing an epoxy resin, a hardening | curing agent, and an inorganic filler, WHEREIN: The phenolic compound of the quinobolac structure which contains a biphenyl group in the molecule | numerator represented by following formula (1) as an epoxy resin, and 4,4'- represented by following formula (2). 0.5 to 15% by weight of a modified epoxy resin produced by glycidyl etherification of a mixture of dihydroxy biphenyls; 경화제로서 하기 화학식 3으로 표시되는 다방향족 경화제와 화학식 4로 표시되는 다관능성 경화제의 혼합물 2 내지 10.5 중량%;2 to 10.5 wt% of a mixture of the polyaromatic curing agent represented by the following formula (3) and the polyfunctional curing agent represented by the formula (4) as a curing agent; 무기충전제로서 용융 실리카, 합성 실리카 혹은 이들의 혼합물을 80 내지 93 중량%를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.Epoxy resin composition for semiconductor element sealing, characterized in that it comprises 80 to 93% by weight of fused silica, synthetic silica or a mixture thereof as an inorganic filler. [화학식 1][Formula 1]
Figure 112007022941537-pat00009
Figure 112007022941537-pat00009
(n의 평균치는 1 내지 6)(average of n is 1 to 6) [화학식 2][Formula 2]
Figure 112007022941537-pat00010
Figure 112007022941537-pat00010
[화학식 3][Formula 3]
Figure 112007022941537-pat00011
Figure 112007022941537-pat00011
(n의 평균치는 1 내지 6)(average of n is 1 to 6) [화학식 4][Formula 4]
Figure 112007022941537-pat00015
Figure 112007022941537-pat00015
(n의 평균치는 1 내지 6) (average of n is 1 to 6)
제 1 항에 있어서, 상기 화학식 3의 구조를 가진 다방향족 경화제와 상기 화학식 4의 구조를 가지는 다관능성 경화제는 20:80 내지 60:40의 중량비로 혼합된 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The epoxy resin for sealing a semiconductor device according to claim 1, wherein the multi-aromatic curing agent having the structure of Formula 3 and the multifunctional curing agent having the structure of Formula 4 are mixed in a weight ratio of 20:80 to 60:40. Composition. 제 1 항에 있어서, 상기 무기충전재는 그 평균입자가 8.7 내지 14.9㎛이며, 입자 분포가 3㎛ 이하의 누적 중량비가 15.4 내지 23.4 중량%, 24㎛ 이하의 누적 중량비가 66.9 내지 84.3 중량%, 53㎛ 이상의 크기를 갖는 입자의 중량비가 0.3 중량% 이하이며, 평균 구형화도가 0.85 이상인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.According to claim 1, wherein the inorganic filler has an average particle of 8.7 to 14.9㎛, the cumulative weight ratio of the particle distribution of 3㎛ or less 15.4 to 23.4% by weight, the cumulative weight ratio of 24㎛ or less 66.9 to 84.3% by weight, 53 Epoxy resin composition for semiconductor element sealing, wherein the weight ratio of particles having a size of µm or more is 0.3% by weight or less, and the average sphericity is 0.85 or more. 제 1 항에 있어서, 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 또는 이들 중 2 이상의 혼합물로 이루어지는 그룹 중에서 선택되는 경화촉진제를 전체 조성물에 대하여 0.1 내지 0.3 중량% 더 포함하여 이루어짐을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The tertiary amine, such as benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, and tri (dimethylaminomethyl) phenol, 2-methylimidazole, 2-phenylimidazole, etc. Organic phosphines such as polyazoles, triphenylphosphine, diphenylphosphine, phenylphosphine, tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate or mixtures of two or more thereof Epoxy resin composition for sealing a semiconductor device, characterized in that further comprises 0.1 to 0.3% by weight of a curing accelerator selected from the group consisting of. 제 1 항에 있어서, 내열성이 우수한 변성 실리콘 오일을 전체 에폭시 수지 조성물에 대해 0.5 내지 1.5 중량%의 양으로 더 포함하여 이루어짐을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물. The epoxy resin composition for sealing a semiconductor device according to claim 1, further comprising a modified silicone oil having excellent heat resistance in an amount of 0.5 to 1.5% by weight based on the total epoxy resin composition. 제 5 항에 있어서, 상기 변성 실리콘 오일은 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일, 카르복실 관능기를 갖는 실리콘 오일 또는 이들 중 2 이상의 혼합물로 이루어지는 그룹으로부터 선택된 것임을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.6. The semiconductor device sealing as claimed in claim 5, wherein the modified silicone oil is selected from the group consisting of a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group or a mixture of two or more thereof. Epoxy resin composition.
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WO2018080057A1 (en) * 2016-10-31 2018-05-03 주식회사 케이씨씨 Epoxy resin composition for semiconductor encapsulants

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