KR100599863B1 - Epoxy Resin Composition for Encapsulating Semiconductor Device - Google Patents

Epoxy Resin Composition for Encapsulating Semiconductor Device Download PDF

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KR100599863B1
KR100599863B1 KR1020030100339A KR20030100339A KR100599863B1 KR 100599863 B1 KR100599863 B1 KR 100599863B1 KR 1020030100339 A KR1020030100339 A KR 1020030100339A KR 20030100339 A KR20030100339 A KR 20030100339A KR 100599863 B1 KR100599863 B1 KR 100599863B1
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epoxy resin
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silicone oil
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배경철
박윤곡
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제일모직주식회사
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0066Flame-proofing or flame-retarding additives
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
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    • C08K5/16Nitrogen-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/51Phosphorus bound to oxygen
    • C08K5/53Phosphorus bound to oxygen bound to oxygen and to carbon only
    • C08K5/5313Phosphinic compounds, e.g. R2=P(:O)OR'
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/5399Phosphorus bound to nitrogen
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/54Silicon-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/55Boron-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2296Oxides; Hydroxides of metals of zinc

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  • Engineering & Computer Science (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 대한 것으로, 보다 상세하게는 에폭시 수지, 경화제, 경화촉진제, 변성실리콘 오일, 및 무기 충전제를 필수성분으로 하여 이루어지는 에폭시 수지 조성물에 있어서, 난연제로서 포스파젠과 징크보레이트를 첨가하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이며, 본 발명에 의해 할로겐화 난연제를 사용하지 않고도 우수한 난연성을 달성함과 동시에 성형성 및 신뢰성면에서도 우수한 특성을 나타내는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공할 수 있다.The present invention relates to an epoxy resin composition for sealing semiconductor devices, and more particularly, to an epoxy resin composition comprising epoxy resin, a curing agent, a curing accelerator, a modified silicone oil, and an inorganic filler as essential components. The present invention relates to an epoxy resin composition for semiconductor element sealing, wherein zinc borate is added. According to the present invention, excellent flame retardancy is achieved without using a halogenated flame retardant, and at the same time, semiconductor element sealing exhibits excellent properties in terms of moldability and reliability. The epoxy resin composition for this can be provided.

에폭시 수지, 반도체 소자, 봉지재, 포스파젠, 징크보레이트, 난연성, 성형성, 신뢰성Epoxy resin, semiconductor element, encapsulant, phosphazene, zinc borate, flame retardancy, formability, reliability

Description

반도체 소자 밀봉용 에폭시 수지 조성물 {Epoxy Resin Composition for Encapsulating Semiconductor Device}Epoxy Resin Composition for Encapsulating Semiconductor Device

본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 난연제로서 포스파젠과 징크보레이트를 첨가하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor elements, and more particularly, to an epoxy resin composition for sealing semiconductor elements, wherein phosphazene and zinc borate are added as a flame retardant.

일반적으로 반도체 봉지재용 에폭시 수지를 제조함에 있어서 난연성이 필요하며 대부분의 반도체업체에서 UL-94 V-0를 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 난연제를 사용하여 반도체 봉지재용 에폭시 수지를 제조하고 있으며, 주로 브롬에폭시와 삼산화안티몬을 반도체 봉지재용 에폭시 수지 제조시 사용하여 난연성을 확보하고 있다. 즉, 반도체 봉지재용 에폭시 수지를 제조시 난연성을 부여하는 난연제로서 브롬이나 염소계의 할로겐계 난연제와 이것과 같이 난연 상승효과가 우수한 삼산화안티몬을 난연보조제로 많이 사용하고 있다. 그러나, 이러한 할로겐계 난연제를 사용하여 난연성을 확보한 반도체 봉지재용 에폭시수지의 경우 소각시나 화재시 다이옥신(dioxin)이나 다이퓨란(difuran)등의 유독성 발 암물질이 발생되는 것으로 알려져 있다. 또한 할로겐계 난연제의 경우 연소시 발생하는 HBr 및 HCl 등의 가스로 인해 인체에 유독하며 반도체 칩(chip)이나 와이어(wire) 및 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하는 점 등의 문제가 있다.In general, flame retardancy is required in manufacturing an epoxy resin for semiconductor encapsulant, and most semiconductor companies require UL-94 V-0 as flame retardant. In order to secure such flame retardancy, a flame retardant is used to manufacture an epoxy resin for a semiconductor encapsulant, and bromine epoxy and antimony trioxide are mainly used to prepare an epoxy resin for a semiconductor encapsulant to ensure flame retardancy. That is, bromine or chlorine-based halogen-based flame retardants and antimony trioxide having excellent flame retardant synergistic effects are widely used as flame retardants as flame retardants for imparting flame retardancy in manufacturing epoxy resins for semiconductor encapsulants. However, it is known that toxic carcinogens such as dioxin or difuran are generated in case of incineration or fire in the case of epoxy resin for semiconductor encapsulant having flame retardancy by using halogen-based flame retardant. In addition, halogen-based flame retardants are toxic to humans due to gases such as HBr and HCl generated during combustion, and are a major cause of corrosion of semiconductor chips, wires, and lead frames. There is a problem such as working.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위한 것으로, 할로겐화 난연제를 사용하지 않고도 우수한 난연성을 달성함과 동시에 성형성 및 신뢰성면에서도 우수한 특성을 나타내는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the prior art as described above, to provide an epoxy resin composition for sealing a semiconductor device showing excellent properties in terms of moldability and reliability while achieving excellent flame resistance without using a halogenated flame retardant. The purpose.

즉, 본 발명은 에폭시 수지, 경화제, 경화촉진제, 변성실리콘 오일, 및 무기 충전제를 필수성분으로 하여 이루어지는 에폭시 수지 조성물에 있어서, 난연제로서 하기 화학식 1로 표시되는 포스파젠과 하기 화학식 2로 표시되는 징크보레이트를 첨가하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.That is, the present invention is an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, a modified silicone oil, and an inorganic filler as essential components, wherein the flame retardant is zinc phosphazene represented by the following formula (1) and zinc represented by the following formula (2). It is related with the epoxy resin composition for semiconductor element sealing characterized by adding a borate.

[화학식 1][Formula 1]

Figure 112003050809784-pat00001
Figure 112003050809784-pat00001

상기 식에서 R 및 R'는 각각 수소원자 또는 메틸기이고, n은 1 내지 4의 정수이다.Wherein R and R 'are each a hydrogen atom or a methyl group, and n is an integer of 1 to 4.

[화학식 2][Formula 2]

Figure 112003050809784-pat00002

Figure 112003050809784-pat00002

이하에서 본 발명을 보다 상세하게 설명한다.The present invention will be described in more detail below.

본 발명의 조성물에서 에폭시 수지로는 에폭시 당량이 150~250인 바이페닐 에폭시 수지, 에폭시 당량이 170~230인 오르소 크레졸 노볼락 에폭시 수지를 각각 단독으로 또는 혼합하여 사용할 수 있다. 전체 조성물 중 상기 에폭시 수지의 함량은 3.5∼15중량%이다.In the composition of the present invention, as the epoxy resin, a biphenyl epoxy resin having an epoxy equivalent of 150 to 250 and an ortho cresol novolac epoxy resin having an epoxy equivalent of 170 to 230 may be used alone or in combination. The content of the epoxy resin in the total composition is 3.5 to 15% by weight.

본 발명의 조성물에 포함되는 경화제로서는 2개 이상의 수산기를 갖고 수산기 당량이 100∼200인 통상의 페놀 노볼락 수지, 크레졸 노볼락 수지, 자일록(Xylok) 수지, 디사이클로펜타디엔 수지 등을 각각 단독으로 또는 2종류 이상 혼합하여 사용할 수 있다. 그러나 가격 및 성형성의 관점에서 페놀 노볼락형 수지를 경화제 전체의 50 중량% 이상 사용하는 것이 바람직하다.As a hardening | curing agent contained in the composition of this invention, normal phenol novolak resin, cresol novolak resin, Xylok resin, dicyclopentadiene resin, etc. which have two or more hydroxyl groups and whose hydroxyl equivalent is 100-200, respectively is independent. Or two or more kinds can be used. However, from the viewpoint of price and moldability, it is preferable to use at least 50% by weight of the phenol novolac-type resin as a whole of the curing agent.

에폭시 수지와 경화제의 사용비는 수산기 당량에 대한 에폭시 당량이 0.8∼1.2가 되는 범위로 사용하는 것이 좋으며, 전체조성물 중 경화제의 사용량은 2∼10.5 중량% 범위가 되는 것이 바람직하다.The use ratio of the epoxy resin and the curing agent is preferably used in the range of 0.8 to 1.2 epoxy equivalent to the hydroxyl equivalent, and the amount of the curing agent in the total composition is preferably in the range of 2 to 10.5% by weight.

본 발명에서는 난연제로서 비할로겐계인 포스파젠과 징크보레이트를 병용하 여 사용함을 특징으로 한다.In the present invention, a non-halogen phosphazene and zinc borate are used in combination as a flame retardant.

본 발명에서 적용된 포스파젠(phosphazene)은 하기 화학식 1과 같은 구조를 가지는 물질로서, 분해온도가 350℃이며, 내습성, 내열성이 우수하고, 고온에서 연소시 탄소층이 형성되어 외부의 산소와 열을 차단하여 난연효과가 나타난다.The phosphazene (phosphazene) applied in the present invention is a material having a structure as shown in the following formula (1), the decomposition temperature is 350 ℃, excellent moisture resistance, heat resistance, the carbon layer is formed when burning at high temperatures and the outside oxygen and heat Blocks the flame retardant effect.

Figure 112003050809784-pat00003
Figure 112003050809784-pat00003

상기 식에서 R 및 R'는 각각 수소원자 또는 메틸기이고, n은 1 내지 4의 정수이다.Wherein R and R 'are each a hydrogen atom or a methyl group, and n is an integer of 1 to 4.

전체 조성물 중 상기 포스파젠의 함량은 0.5∼10중량%이다. 상기 함량이 상한선을 초과하는 경우 이에 상응하는 난연성을 얻기가 어려워 불필요한 원가상승의 원인이 되는 문제점이 있고, 하한선 미만인 경우 원하는 난연성 정도를 달성할 수 없다.The content of the phosphazene in the total composition is 0.5 to 10% by weight. If the content exceeds the upper limit, it is difficult to obtain a corresponding flame retardancy, causing unnecessary cost rise, and if less than the lower limit, the desired degree of flame retardancy cannot be achieved.

본 발명에서 적용된 징크보레이트(zinc borate)는 하기 화학식 2과 같은 구조를 가진 물질로서 녹는점이 260℃이고 내열성, 전기특성, 내습성이 우수하며, 고온에서 탈수반응이 일어나면서 흡열현상이 보이며 530J/g의 흡열량에 의해 우수한 난연효과를 나타낸다. 또한 분해된 연소물이 안정적인 탄소층(Char)을 형성하여 기존 할로겐계 난연제보다 뛰어난 난연효과가 나타난다. Zinc borate applied in the present invention (zinc borate) is a material having a structure as shown in the following formula (2) has a melting point of 260 ℃ and excellent heat resistance, electrical properties, moisture resistance, the dehydration reaction occurs at high temperature, the endothermic phenomenon is seen 530J / Excellent flame retardant effect is shown by the endothermic amount of g. In addition, the decomposed combustion products form a stable carbon layer (Char), resulting in an excellent flame retardant effect than conventional halogen-based flame retardants.

Figure 112003050809784-pat00004
Figure 112003050809784-pat00004

전체 조성물 중 상기 징크보레이트의 함량은 0.5∼6중량%이다. 상기 함량이 상한선을 초과하는 경우 유동성이 부족하여 반도체 조립시 성형불량이 발생할 가능성이 많은 문제점이 있고, 하한선 미만인 경우 원하는 난연성 정도를 달성할 수 없다.The content of the zinc borate in the total composition is 0.5 to 6% by weight. If the content exceeds the upper limit, there is a problem that there is a lot of problems that there is a possibility of poor molding when assembling the semiconductor due to the lack of fluidity, if the lower than the lower limit can not achieve the degree of flame retardancy.

본 발명의 조성물에 포함되는 경화촉진제는 상기 에폭시 수지와 경화제의 경화반응을 촉진하기 위해 필요한 성분으로, 예를 들어 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등을 사용할 수 있으며, 이들을 단독으로 또는 2종 이상을 병용하여 사용할 수 있다. 전체 조성물 중 상기 경화촉진제의 함량은 0.1∼0.3 중량% 범위이다.The curing accelerator included in the composition of the present invention is a component necessary for promoting the curing reaction of the epoxy resin and the curing agent, for example benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) Tertiary amines such as phenol, imidazoles such as 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine, tetraphenylphosphonium Tetraphenyl boron salts, such as tetraphenyl borate and triphenyl phosphine tetraphenyl borate, etc. can be used, These can be used individually or in combination of 2 or more types. The content of the curing accelerator in the total composition is in the range of 0.1 to 0.3% by weight.

본 발명의 조성물에 포함되는 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체를 사용하며, 구체적으로는 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 단독으로 또는 2종 이상 혼합하여 사용한다. 전체 조성물 중 상기 변성 실리콘 오일의 함량은 0.05∼1.5 중량% 범위이다. 실리콘 오일을 1.5 중량% 초과하여 사용시는 표면 오염 이 발생하기 쉽고 레진 블리드가 길어질 우려가 있으며, 0.05 중량% 미만으로 사용시에는 충분한 저탄성률을 얻을 수 없게 된다.As the modified silicone oil included in the composition of the present invention, a silicone polymer having excellent heat resistance is used, specifically, a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like alone or 2 or more types may be mixed and used. The content of the modified silicone oil in the total composition is in the range of 0.05 to 1.5% by weight. If the silicone oil is used in excess of 1.5% by weight, surface contamination is likely to occur and the resin bleed may be long, and when used at less than 0.05% by weight, sufficient low modulus of elasticity may not be obtained.

본 발명의 조성물에 포함되는 무기충전제는 평균입도가 0.1∼35㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하다. 전체 조성물 중 상기 무기충전제의 함량은 73∼90중량% 범위이다. 73 중량% 미만으로 무기충전제를 사용할 경우에는 충분한 강도와 저열팽창화를 실현할 수 없으며, 또한 수분의 침투가 용이해져 신뢰성 특성에 치명적이 된다. 또한, 무기충전제의 충전량이 90중량% 초과인 경우 유동특성의 저하로 인한 성형성이 나빠질 우려가 있다.Inorganic fillers contained in the composition of the present invention is preferably used melt or synthetic silica having an average particle size of 0.1 ~ 35㎛. The content of the inorganic filler in the total composition is in the range of 73 to 90% by weight. When the inorganic filler is used at less than 73% by weight, sufficient strength and low thermal expansion cannot be realized, and moisture permeation becomes easy, which is fatal to reliability characteristics. In addition, when the filling amount of the inorganic filler is more than 90% by weight, there is a fear that the moldability due to the deterioration of the flow characteristics.

또한 본 발명의 조성물에는, 본 발명의 목적을 해하지 않는 범위에서, 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시 실란, 아미노 실란, 알킬 실란 등의 커플링제 등이 추가로 첨가될 수 있다.Moreover, in the composition of this invention, release agents, such as a higher fatty acid, a higher fatty acid metal salt, and ester wax, coloring agents, such as carbon black and an organic and inorganic dye, epoxy silane, amino silane, and alkyl silane, in the range which does not impair the objective of this invention. Coupling agents such as these may be further added.

상기 조성성분을 이용하여 본 발명의 에폭시 수지 조성물을 제조하는 방법으로서 구체적으로 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법을 사용할 수 있다.As a method of producing the epoxy resin composition of the present invention using the above-mentioned components, a predetermined amount of the compound is uniformly mixed uniformly using a Henschel mixer or a Rodige mixer, followed by melt kneading with a roll mill or a kneader, cooling, The method of obtaining the final powder product after grinding may be used.

본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로서는 바람직하게는 일반적으로 사용되는 저압 트랜스퍼 성형법을 사용할 수 있으나, 그 이외에도 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로 성형할 수 있다. As a method of sealing a semiconductor device using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method, which is generally used, may be preferably used. In addition, molding may be performed by injection molding, casting, or the like. Can be.

이하에서 실시예를 통하여 본 발명을 보다 상세하게 설명하고자 하나, 하기의 실시예는 설명의 목적을 위한 것으로 본 발명은 제한하고자 하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are provided for the purpose of explanation and not intended to limit the present invention.

실시예 1∼3Examples 1 to 3

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다.To prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing.

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 MPS(Multi Plunger System)성형기를 이용하여 175℃에서 60초간 성형시킨 후, 175℃에서 6시간 동안 후경화시켜, MQFP형 반도체 소자를 제작하였다.The epoxy resin composition thus obtained was molded at 175 ° C. for 60 seconds using an MPS (Multi Plunger System) molding machine, and then cured at 175 ° C. for 6 hours to prepare an MQFP semiconductor device.

이와같이 제조된 반도체 소자를 사용하여 난연성, 신뢰성, 성형성을 시험하고 이를 표 2에 나타내었다. 신뢰성 시험은 열충격 시험에서의 팩키지크랙 발생정도로 나타내었다.The semiconductor device manufactured as described above was tested for flame retardancy, reliability, and moldability, and is shown in Table 2. The reliability test was expressed as the degree of package crack occurrence in the thermal shock test.

비교예 1, 2Comparative Examples 1 and 2

하기 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 물성 평가도 동일한 방법으로 행하였다.As shown in Table 1 below, each component was basis weighted according to a given composition to prepare an epoxy resin composition in the same manner as in Example, and physical properties were evaluated in the same manner.

구 성 성 분Composition 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 비교예 1Comparative Example 1 비교예 2Comparative Example 2 에폭시수지Epoxy resin 9.19.1 11.211.2 11.511.5 14.814.8 14.514.5 경화제Hardener 5.085.08 6.986.98 5.185.18 7.387.38 7.687.68 난연제Flame retardant 포스파젠Phosphazene 1010 0.50.5 55 -- -- 브롬화에폭시수지Brominated epoxy resin -- -- -- 1.51.5 1One 징크보레이트Zinc borate 0.50.5 66 33 -- -- Sb2O3 Sb 2 O 3 -- -- -- 1One 1.51.5 경화촉진제Curing accelerator 0.270.27 0.270.27 0.270.27 0.270.27 0.270.27 실리카Silica 7474 7474 7474 7474 7474 변성실리콘 오일Modified silicone oil 0.10.1 0.10.1 0.10.1 0.10.1 0.10.1 γ-글리시톡시프로필트리메톡시 실란γ-glycithoxypropyltrimethoxy silane 0.430.43 0.430.43 0.430.43 0.430.43 0.430.43 카본블랙Carbon black 0.270.27 0.270.27 0.270.27 0.270.27 0.270.27 카르나우바왁스Carnauba Wax 0.250.25 0.250.25 0.250.25 0.250.25 0.250.25 합계Sum 100100 100100 100100 100100 100100

*에폭시 수지 (국도화학 社, YDCN-500-7P )* Epoxy Resin (Kukdo Chemical, YDCN-500-7P)

*브롬화에폭시수지 (국도화학 社, YDB-400 )* Brominated epoxy resin (Kukdo Chemical, YDB-400)

*경화제 (코오롱유화 社, KPH-2001 )* Hardening agent (KOLON Emulsifying Company, KPH-2001)

*경화 촉진제 ( HOKKO 社, TPP )* Hardening accelerator (HOKKO, TPP)

*변성실리콘오일 ( Dow Corning Toray 社, SF-8421EG )* Modified silicone oil (Dow Corning Toray, SF-8421EG)

평 가 항 목Evaluation Item 실시예1Example 1 실시예2Example 2 실시예3Example 3 비교예1Comparative Example 1 비교예2Comparative Example 2 스파이럴 플로우(inch)Spiral Flow (inch) 3636 3737 3838 3232 3535 Tg(℃)Tg (℃) 160160 161161 162162 153153 154154 전기전도도(㎲/㎝)Electrical Conductivity (㎲ / ㎝) 3131 3232 3232 3535 3232 굴곡강도(kgf/mm2at 240℃)Flexural strength (kgf / mm2at 240 ℃) 1313 1313 1313 1414 1313 굴곡탄성율(kgf/mm2at 240℃)Flexural modulus (kgf / mm2at 240 ℃) 14201420 14151415 14101410 14401440 14421442 난연성Flame retardant UL 94 V-0UL 94 V-0 V-0V-0 V-0V-0 V-0V-0 V-0V-0 V-0V-0 성형성Formability 보이드 발생갯수 (Visual Inspection)Void occurrence number (Visual Inspection) 00 00 00 1One 00 총시험한 반도체소자수Total number of semiconductor devices tested 30003000 30003000 30003000 30003000 30003000 신뢰성responsibility 내크랙성 평가 (열충격시험) 크랙발생수Crack resistance evaluation (thermal shock test) 00 00 00 00 1One 총시험한 반도체소자수Total number of semiconductor devices tested 30003000 30003000 30003000 30003000 30003000

[물성평가 방법][Property evaluation method]

1) 스파이럴 플로우(Spiral Flow)1) Spiral Flow

EMMI규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/cm2에서 유동길이를 평가하였다.Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2 .

2) 유리전이온도(Tg)2) Glass transition temperature (Tg)

TMA(Thermomechanical Analyser)로 평가하였다.It was evaluated by TMA (Thermomechanical Analyser).

3) 전기전도도3) Electrical conductivity

경화된 EMC 시험편을 분쇄기에서 약 #400MESH ~ #100MESH의 입자크기로 분쇄하고 분말화한 시료 2gㅁ0.2㎎을 평량하여 추출용 병에 넣어서 증류수 80CC를 넣고 100 ℃ 오븐 내에서 24시간 추출한 다음 추출수의 상등액을 이용하여 전기전도도를 측정하였다.The cured EMC test piece was crushed into a particle size of about # 400MESH to # 100MESH in a grinder, and weighed 2g ㅁ 0.2mg of the powdered sample into an extraction bottle. Electrical conductivity was measured using the supernatant.

4)굴곡강도, 굴곡탄성율4) Flexural Strength, Flexural Modulus

경화된 EMC 성형시편(125 X 12.6 X 6.4 mm)을 준비하여 시편 중심부의 넓이 와 두꼐를Micrometer로 0.001mm까지 재어 UTM 시험기에서 측정하였다Hardened EMC molded specimens (125 x 12.6 x 6.4 mm) were prepared and the width and thickness of the center of the specimen were measured on a UTM tester with a micrometer measuring 0.001 mm.

5) 난연성5) Flame retardant

UL 94 V-0 규격에 준하여 평가하였다.It evaluated according to UL 94 V-0 standard.

6) 내크랙성 평가(신뢰성 시험)6) Crack resistance evaluation (reliability test)

프리컨디션(Precondition)후 열충격 환경시험기(Temperature Cycle Test)에서 1,000싸이클 경과후, 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)로 크랙발생유무 평가하였다.After pre-condition, after 1,000 cycles in a thermal shock environment tester (Temperature Cycle Test), the crack occurrence was evaluated by a non-destructive tester SAT (Scanning Acoustic Tomograph).

(a) 프리컨디션조건(a) Precondition

에폭시 수지조성물로 제조한 SOJ형 반도체 소자를 125℃에서 24시간 건조시킨후, 5싸이클의 열충격시험을 거쳐 다시 85℃/85% 상대습도 조건하에서 168시간 동안 방치시킨후 235℃, 10초동안 IR 리플로우를 3회 통과시켜 1차로 프리컨디션 조건하에서의 패케이지 크랙발생 유무를 평가한다. 이 단계에서 크랙이 발생되었을 경우, 다음 단계인 1,000싸이클의 열충격 시험은 진행하지 않는다.SOJ-type semiconductor device made of epoxy resin composition was dried at 125 ° C for 24 hours, and then subjected to 5 cycles of thermal shock test, and then left for 168 hours under 85 ° C / 85% relative humidity condition, followed by IR for 235 ° C and 10 seconds. Three passes through the reflow are used to first evaluate the presence of package cracks under precondition conditions. If cracks occur at this stage, the next stage, the 1,000 cycle thermal shock test, is not conducted.

(b) 열충격 시험(b) thermal shock test

앞에서의 프리컨디션 조건을 통과한 반도체 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1싸이클로하여 1,000싸이클을 진행한 후, 비파괴검사기인 SAT를 이용하여 내부 및 외부 크랙을 평가한다.After 1,000 cycles of leaving the semiconductor package that passed the preconditions for 10 minutes at -65 ° C, 5 minutes at 25 ° C, and 10 minutes at 150 ° C for 1 cycle, the inside of the semiconductor package was And external cracks are evaluated.

본 발명에 의해 할로겐화 난연제를 사용하지 않고도 우수한 난연성을 달성함 과 동시에 성형성 및 신뢰성면에서도 우수한 특성을 나타내는 반도체 소자 밀봉용 에폭시 수지 조성물을 제공할 수 있다.According to the present invention, it is possible to provide an epoxy resin composition for sealing a semiconductor device that exhibits excellent flame retardancy and excellent properties in formability and reliability without using a halogenated flame retardant.

Claims (4)

에폭시 수지, 경화제, 경화촉진제, 변성실리콘 오일, 및 무기 충전제를 필수성분으로 하여 이루어지는 에폭시 수지 조성물에 있어서, 난연제로서 하기 화학식 1로 표시되는 포스파젠을 전체 조성물 대비 0.5~5 중량%를 사용하고, 하기 화학식 2로 표시되는 징크보레이트를 전체 조성물 대비 0.5~6 중량%를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.In the epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, a modified silicone oil, and an inorganic filler as essential components, 0.5 to 5% by weight of phosphazene represented by the following formula (1) is used as a flame retardant, compared to the total composition, An epoxy resin composition for sealing a semiconductor device, wherein the zinc borate represented by Formula 2 is used in an amount of 0.5 to 6 wt% based on the total composition. [화학식 1][Formula 1]
Figure 112006013751625-pat00005
Figure 112006013751625-pat00005
상기 식에서 R 및 R'는 각각 수소원자 또는 메틸기이고, n은 1 내지 4의 정수이다.Wherein R and R 'are each a hydrogen atom or a methyl group, and n is an integer of 1 to 4. [화학식 2][Formula 2]
Figure 112006013751625-pat00006
Figure 112006013751625-pat00006
삭제delete 제 1항에 있어서, 전체 조성물 중 상기 에폭시 수지의 함량은 3.5∼15중량% 이고, 상기 경화제의 함량은 2∼10.5중량%이며, 상기 경화촉진제의 함량은 0.1∼0.3중량%이고, 상기 변성 실리콘 오일의 함량은 0.05∼1.5중량%이며, 상기 무기충전제의 함량은 73∼90 중량%인 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The method of claim 1, wherein the content of the epoxy resin in the total composition is 3.5 to 15% by weight, the content of the curing agent is 2 to 10.5% by weight, the content of the curing accelerator is 0.1 to 0.3% by weight, the modified silicone The content of oil is 0.05 to 1.5% by weight, the content of the inorganic filler is an epoxy resin composition for sealing a semiconductor device, characterized in that 73 to 90% by weight. 제 1항에 있어서, The method of claim 1, 상기 에폭시 수지로 에폭시 당량이 150~250인 바이페닐 에폭시 수지 또는 에폭시 당량이 170~230인 오르소 크레졸 노볼락 에폭시 수지를 단독으로 또는 혼합하여 사용하고,As the epoxy resin, a biphenyl epoxy resin having an epoxy equivalent of 150 to 250 or an ortho cresol novolac epoxy resin having an epoxy equivalent of 170 to 230 is used alone or in combination, 상기 경화제로 2개 이상의 수산기를 갖고 수산기 당량이 100∼200인 통상의 페놀 노볼락 수지, 크레졸 노볼락 수지, 자일록(Xylok) 수지 또는 디사이클로펜타디엔 수지를 각각 단독으로 또는 2종 이상 혼합하여 사용하며,The phenolic novolac resin, cresol novolac resin, Xylok resin or dicyclopentadiene resin having two or more hydroxyl groups and a hydroxyl equivalent of 100 to 200 as the curing agent may be used alone or in combination of two or more kinds thereof. Use, 상기 경화촉진제로 이미다졸류, 유기 포스핀류, 또는 테트라페닐보론염을 각각 단독으로 또는 2종 이상 혼합하여 사용하고,As the curing accelerator, imidazoles, organic phosphines, or tetraphenylboron salts are used alone or in combination of two or more thereof, 상기 변성 실리콘 오일로 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 또는 카르복실 관능기를 갖는 실리콘 오일을 각각 단독으로 또는 2종 이상 혼합하여 사용하며,As the modified silicone oil, a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, or a silicone oil having a carboxyl functional group may be used alone or in combination of two or more kinds thereof. 상기 무기충진제로는 평균입도가 0.1∼35㎛인 용융 또는 합성실리카를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.The inorganic filler is epoxy resin composition for semiconductor element sealing, characterized in that the use of molten or synthetic silica having an average particle size of 0.1 ~ 35㎛.
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