KR102158875B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

An epoxy resin composition for sealing semiconductor devices comprising an epoxy resin, a curing agent, a curing accelerator and an inorganic filler, the curing agent includes a modified polyphenylene oxide resin, and the modified polyphenylene oxide resin is an epoxy resin for sealing semiconductor devices. It is contained in an amount of 0.1% to 5% by weight of the composition, to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed using the same.

Description

Epoxy resin composition for sealing a semiconductor device, and a semiconductor device sealed using the same {EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME}

The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed using the same.

Recently, the degree of integration of semiconductor devices has been improved. In a semiconductor device in which the stacked and high-density semiconductor devices are sealed in a small and thin package, the frequency of failures such as package malfunction and package cracking due to heat generated during semiconductor operation becomes very high.

Currently, as a solution to heat dissipation, heat generated by a heat dissipation plate is dissipated by using a heat dissipating material such as a metal material to help dissipate heat when molding an epoxy resin for sealing. However, the heat sink can be used only in some packages such as FBGA and QFP, and there is a problem of lower productivity due to an additional process during assembly and an increase in cost due to the high cost of the heat sink. Therefore, the necessity of molding and materials for highly heat dissipating sealing epoxy resins by high thermal conductivity has emerged strongly. Some semiconductor packages use spherical aluminum oxide (alumina).

Alumina has a thermal conductivity of 25W/m.K to 30W/m.K, but the resin used in the sealed semiconductor device has a thermal conductivity of 0.2W/m.K, which is very bad, so there is a limit in improving the thermal conductivity. In addition, graphite having high thermal conductivity has poor insulation performance, and aluminum nitride, boron nitride, and silicon carbide fillers having relatively good insulation performance did not improve the filling rate due to poor flow of the filler. In recent years, there are many cases of promoting the improvement of the thermal conductivity of resins, but commercialization of insulating and thermosetting compression resin encapsulated semiconductor materials has not yet been achieved.

The object of the present invention Composition of Increase the thermal conductivity It is to provide an epoxy resin composition for sealing semiconductor devices capable of suppressing the occurrence of malfunctions and defects in the semiconductor package due to heat by increasing the heat dissipation of the semiconductor package.

Another object of the present invention is to provide a semiconductor device sealed with the above composition.

The epoxy resin composition for sealing a semiconductor device of the present invention includes an epoxy resin, a curing agent, a curing accelerator and an inorganic filler, the curing agent includes a modified polyphenylene oxide resin, and the modified polyphenylene oxide resin is used to seal the semiconductor device. It is contained in an amount of 0.1% to 5% by weight of the epoxy resin composition.

The present invention provides a semiconductor device sealed by using the epoxy resin composition for sealing a semiconductor device according to the present invention.

The present invention Composition of Increase the thermal conductivity There is provided an epoxy resin composition for sealing a semiconductor device capable of suppressing malfunctions and defects of a semiconductor package due to heat by enhancing heat dissipation of a semiconductor package.

The present invention provides a semiconductor device sealed with the above composition.

In order to impart high thermal conductivity to the epoxy resin composition for sealing semiconductor elements, there is a method of using an inorganic filler such as aluminum oxide, aluminum nitride, or boron nitride as an inorganic filler. However, the resin contained in the epoxy resin composition for sealing semiconductor devices has a very low thermal conductivity of about 0.2W/m.K in general, and thus there is a limit to increasing the thermal conductivity of the epoxy resin composition for sealing semiconductor devices. Accordingly, the present inventors improved the thermal conductivity of the epoxy resin composition for sealing semiconductor devices by including a modified polyphenylene oxide resin in the composition in an amount of 0.1% to 5% by weight as a curing agent, thereby improving the heat dissipation of the semiconductor package. Invented that it is possible to suppress the occurrence of malfunctions and defects, and completed the present invention.

Hereinafter, the components of the epoxy resin composition for sealing semiconductor devices according to the present invention will be described in detail.

Epoxy resin

Epoxy resin may be used for sealing semiconductor devices 　 generally used epoxy resins, and is not particularly limited. Specifically, the epoxy resin may be an epoxy compound containing two or more epoxy groups in the molecule. For example, the epoxy resin is an epoxy resin obtained by epoxidating a condensation product of phenol or alkyl phenols and hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a polyfunctional type epoxy. Resin, naphthol novolak type epoxy resin, bisphenol A/bisphenol F/bisphenol AD novolak type epoxy resin, bisphenol A/bisphenol F/bisphenol AD glycidyl ether, bishydroxybiphenyl type epoxy resin, dicyclopenta Diene-based epoxy resins, biphenyl-type epoxy resins, and the like. More specifically, the epoxy resin may include at least one of a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a cresol novolak type epoxy resin, and a polyfunctional epoxy resin.

In one embodiment, the phenolaralkyl type epoxy resin may be represented by the following Formula 1:

<Formula 1>

(In Formula 1, the average value of n is 1 to 7).

The epoxy resin may use an epoxy resin having an epoxy equivalent of 100 g/eq to 500 g/eq in consideration of curability. In the above range, the degree of curing can be increased.

Epoxy resin can be used alone or in combination, and it is made by reacting with other components such as a curing agent, a curing accelerator, a release agent, a coupling agent, and a stress reliever in the epoxy resin in the form of an additive compound. You can also use it.

The epoxy resin may be included in 0.5% to 20% by weight, for example, 3% to 15% by weight in the epoxy resin composition for sealing semiconductor devices. In the above range, the curability of the composition may not be reduced.

Hardener

As a curing agent, a modified polyphenylene oxide resin is included in an amount of 0.1% to 5% by weight in the epoxy resin composition. In the above content range, it is possible to improve compatibility by improving the fluidity of the epoxy resin composition, and to increase heat dissipation properties of the semiconductor package by increasing the thermal conductivity, thereby suppressing the occurrence of malfunctions and defects in the semiconductor package due to heat. Preferably, the modified polyphenylene oxide resin may be included in an amount of 1% to 4.5% by weight of the epoxy resin composition. Accordingly, the epoxy resin composition of the present invention can secure a thermal conductivity of 6W/m.K or more, preferably 6W/m.K to 10W/m.K.

In one embodiment, the modified polyphenylene oxide resin may be represented by the following Formula 2 or the following Formula 6:

<Formula 2>

(In Formula 2, R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ , R ₈ are each independently an alkyl group having 1 to 12 carbon atoms or 1 to 12 carbon atoms Is an alkoxy group of,

Y is an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 20 carbon atoms, or Formula 3 below,

<Formula 3>

(In Formula 3, * is a linking site, R ₉ , R ₁₀ are each independently an alkyl group having 1 to 12 carbon atoms or an alkoxy group having 1 to 12 carbon atoms, a and b are each independently It is an integer of 0 to 4, Ar is represented by the following formula 4 or formula 5,

<Formula 4>

<Formula 5>

(In Formula 4 and Formula 5, * is a linking site, and Q ₁ , Q ₂ , and Q ₃ are each independently an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, or a carbon A haloalkyl group having 1 to 12 carbon atoms, o and p are each independently an integer of 0 to 3)

m and n are integers from 1 to 10,000).

<Formula 6>

(In Formula 6, R ₁ , R ₂ , R ₃ are each independently an alkyl group having 1 to 12 carbon atoms or an alkoxy group having 1 to 12 carbon atoms, a is an integer of 0 to 5, b , c is each independently an integer of 0 to 4, n is an integer of 1 to 3,000)

Preferably, m and n in Formula 2 may each independently be an integer of 1 to 5.

In one embodiment, the modified polyphenylene oxide resin may be represented by the following Formula 7:

<Formula 7>

(In Chemical Formula 7, Y, m, and n are as defined in Chemical Formula 2).

In one embodiment, the modified polyphenylene oxide resin may be represented by Formula 8 below:

<Formula 8>

(In Formula 8, n is an integer of 1 to 3,000).

The modified polyphenylene oxide resin may have a weight average molecular weight of 5,000 to 100,000. In the above range, the fluidity and compatibility of the composition may not be lowered.

The modified polyphenylene oxide resin can be synthesized by a conventional method known to those skilled in the art or commercially available products can be used.

The modified polyphenylene oxide resin may be included in an amount of 10% to 100% by weight, preferably 25% to 100% by weight of the curing agent. In the above range, it is possible to improve the thermal conductivity, improve the fluidity and compatibility of the composition, and prevent the curability of the composition from deteriorating.

The epoxy resin composition of the present invention may further include a conventional curing agent known to those skilled in the art in addition to the modified polyphenylene oxide resin. Specifically, the curing agent may be a phenolic curing agent, for example, the phenolic curing agent is a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a polyfunctional type phenol resin, a xylok type phenol resin, a cresol novolac Type phenol resin, naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolak type phenol resin synthesized from bisphenol A and resol, tris(hydroxyphenyl)methane, dihydroxybiphenyl. It may contain one or more of the polyhydric phenol compounds. Preferably, the phenolic curing agent may be one or more of a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a polyfunctional type phenol resin, and a xyloc type phenol resin.

In one embodiment, the phenolaralkyl-type phenol resin may be represented by Formula 9 below, but is not limited thereto:

<Formula 9>

(In Formula 9, the average value of n is 1 to 7).

In one embodiment, the xyloxy phenol resin may be represented by Formula 10 below, but is not limited thereto:

<Formula 10>

(In Formula 10, the average value of n is 0 to 7).

The curing agent may have a hydroxyl equivalent weight of 90 g/eq to 250 g/eq in consideration of curability. In the above range, the degree of curing can be increased.

The curing agent may be used alone or in combination. In addition, it may be used as an additive compound made by subjecting the curing agent to a linear reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a release agent and a stress reliever.

The curing agent may be included in an amount of 0.1% to 13% by weight, preferably 0.1% to 10% by weight of the epoxy resin composition for sealing semiconductor devices. Within the above range, there may be an effect of not reducing the curability of the composition.

The blending ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be 0.95 to 3, specifically 1 to 2, and more specifically 1 to 1.75. When the equivalent ratio of the epoxy resin and the curing agent satisfies the above range, excellent strength may be realized after curing of the epoxy resin composition.

Inorganic filler

The inorganic filler is for improving mechanical properties and low stress reduction of the epoxy resin composition. As the inorganic filler, general inorganic fillers used in the epoxy resin composition for sealing semiconductor devices may be used without limitation, and are not particularly limited. For example, the inorganic filler is fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina (aluminum oxide), magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, aluminum nitride. , Boron nitride, glass fiber, etc. may be used. These may be used alone or in combination. Preferably, alumina alone is used as an inorganic filler in order to secure thermal conductivity, a mixture further comprising at least one of fused silica and crystalline silica is used for alumina, or 1 of aluminum nitride and boron nitride is used for alumina. A mixture containing more than one species may be used.

The shape of the inorganic filler is not limited, but the spherical inorganic filler can improve fluidity. The average particle diameter (D50) of the inorganic filler is preferably 1 μm to 30 μm, and within the above range, fluidity may be good and thermal conductivity may be good. Alumina may be coated in advance with a coupling agent, an epoxy resin, or a curing agent, if necessary.

The amount of inorganic filler used depends on the required physical properties such as moldability, low stress, and high temperature strength. In a specific embodiment, the inorganic filler may be included in an amount of 70% to 95% by weight, for example, 75% to 94% by weight of the epoxy resin composition for sealing semiconductor devices. In the above range, there may be an effect of securing fluidity, reliability, relative dielectric constant and thermal conductivity of the composition.

Hardening accelerator

The curing accelerator is a substance that accelerates the reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole compound, and a boron compound can be used.

Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl) )Phenol and tri-2-ethylhexyl acid salt. Specific examples of organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone and adducts. In the imidazole compound, 2-phenyl-4-methylimidazole, 2-methylimidazole, 　2-phenylimidazole, 　2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl- 4-methylimidazole, 2-heptadecylimidazole, and the like, but are not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane Triethylamine, tetrafluoroboranamine, and the like. In addition, 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-diazabicyclo[5.4. 0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU) and 　phenol novolac resin salt　, but are not limited thereto.

The curing accelerator may be an epoxy resin or an adduct made by pre-reacting with a curing agent.

The curing accelerator may be included in an amount of 0.01% to 2% by weight, specifically 0.02% to 1.5% by weight of the epoxy resin composition for sealing semiconductor devices. In the above range, curing of the epoxy resin composition may be accelerated, and a degree of curing may be advantageous.

The epoxy resin composition for sealing semiconductor elements is a coupling agent, a release agent, a colorant, It may further include one or more of the stress relievers.

Coupling agent

The coupling agent is for improving the interfacial strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent may react between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler, and the kind is not particularly limited. Specific examples of the silane coupling agent include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agent may be used alone or in combination. The coupling agent may be included in an amount of 0.01% to 5% by weight, preferably 0.05% to 3% by weight of the epoxy resin composition for sealing semiconductor devices. In the above range, the strength of the cured epoxy resin composition may be improved.

Release agent

As the release agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt may be used. The release agent may be included in an amount of 0.1% to 1% by weight of the epoxy resin composition for sealing semiconductor devices.

coloring agent

The colorant is for laser marking of the semiconductor device sealing material, and colorants well known in the art may be used, and there is no particular limitation. For example, the colorant may include at least one of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica. The colorant may be included in an amount of 0.01% to 5% by weight, preferably 0.05% to 3% by weight of the epoxy resin composition for sealing semiconductor devices.

Stress reliever

The stress reliever may include a silicone compound such as silicone oil.

The stress reliever may be included in an amount of 0.01% to 5% by weight, preferably 0.05% to 3% by weight of the epoxy resin composition for sealing semiconductor devices.

The epoxy resin composition for sealing a semiconductor device of the present invention may include an antioxidant such as Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate]methane within the range not detrimental to the object of the present invention; Flame retardants such as aluminum hydroxide 　 can be additionally included as needed.

In the epoxy resin composition for sealing semiconductor devices, the above components are uniformly and sufficiently mixed at a predetermined mixing ratio using a Hensel mixer or Lodige mixer, and then a roll-mill or kneader. It can be manufactured by melt-kneading with (kneader), cooling and grinding to obtain a final powder product.

The composition of the present invention as described above can be usefully applied to a semiconductor device. As a method of sealing a semiconductor device by using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method can be generally used. However, it is also possible to form by a method such as injection molding or casting.

The semiconductor device according to the present invention may be sealed with the epoxy resin composition for sealing semiconductor devices of the present invention. The semiconductor device according to the present invention may include a semiconductor device sealed with the epoxy resin composition for sealing semiconductor devices of the present invention.

Hereinafter, the configuration and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, this is presented as a preferred example of the present invention and cannot be construed as limiting the present invention in any sense.

Specific specifications of the components used in the following Examples and Comparative Examples are as follows.

(A) Epoxy resin: Phenol aralkyl type epoxy resin (NC-3000, Nippon Kayaku company)

(B) hardener

(B1) Xylok-type phenolic resin (KPH-F3065, Kolon Emulsifier)

(B2) Phenol aralkyl type phenol resin (MEH-7851, Meiwa company)

(B3) Modified polyphenylene oxide resin (SA-90, Sabic)

(B4) Modified polyphenylene oxide resin (SA-120, Sabic)

(C) Curing accelerator: triphenylphosphine (TPP-K, Hokko Chemical)

(D) Inorganic filler: alumina (DAB-05MS, Denka Denki, average particle diameter (D50): 7.6㎛)

(E) coupling agent

(E1) Methyltrimethoxysilane (SZ-6070, Dow Corning)

(E2) Aminopropyltrimethoxysilane (KBM-573, Shinetsu Corporation)

(F) Colorant: Carbon black (MA-600B, Mitsubishi Chemical)

Example And Comparative example

Each component was weighed according to the composition (unit: wt%) in Table 1 below, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. Thereafter, melt-kneading was performed at 90 to 110°C using a continuous kneader, followed by cooling and pulverizing to prepare an epoxy resin composition for sealing semiconductor devices.

Example Comparative example One 2 3 4 5 6 One 2 3 (A) 5.6 5.6 5.6 5.6 5.6 5.6 5.6 5.6 4.1 (B) (B1) 2 0 2 0 3 0 4 0 0 (B2) 0 2 0 2 0 0 0 4 0 (B3) 2 2 0 0 One 4 0 0 5.5 (B4) 0 0 2 2 0 0 0 0 0 (C) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 (D) 89 89 89 89 89 89 89 89 89 (E) (E1) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 (E2) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 (F) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 total 100 100 100 100 100 100 100 100 100

The physical properties of the compositions of Examples and Comparative Examples prepared as described above were measured according to the following physical property evaluation method. The measurement results are shown in Table 2.

Property evaluation method

(1) Fluidity (unit: inch, spiral flow): Using a low pressure transfer molding press, the composition was injected into a mold for measuring spiral flow according to EMMI-1-66 at a molding temperature of 175°C and a molding pressure of 70 kgf/cm ² Then, the flow field (unit: inch) was measured. The higher the measured value, the better the fluidity.

(2) Thermal conductivity (unit: W/m.K): A specimen for evaluation was prepared with an epoxy resin composition according to ASTM D5470 and measured at 25°C.

Example Comparative example One 2 3 4 5 6 One 2 3 liquidity 68 62 61 65 66 60 71 78 38 Thermal conductivity 7.2 7 7.5 7.1 6.8 7.3 4.2 4 7.6

As shown in Table 2, the composition of the present invention has excellent fluidity, high compatibility, and high thermal conductivity, thereby improving heat dissipation characteristics of the semiconductor package, thereby suppressing the occurrence of defects and malfunctions in the semiconductor package due to heat.

On the other hand, Comparative Example 1 and Comparative Example 2 that did not contain the modified polyphenylene oxide resin of the present invention did not have high thermal conductivity, and Comparative Example 3 containing more than 5% by weight of the modified polyphenylene oxide of the present invention Had poor liquidity.

Simple modifications or changes of the present invention can be easily implemented by those of ordinary skill in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (9)

An epoxy resin composition for sealing semiconductor devices comprising an epoxy resin, a curing agent, a curing accelerator and an inorganic filler, the curing agent includes a modified polyphenylene oxide resin, and the modified polyphenylene oxide resin is an epoxy resin for sealing semiconductor devices. It is included in 0.1% to 5% by weight of the composition,
The modified polyphenylene oxide resin comprises the following Chemical Formula 2, the following Chemical Formula 6, or a mixture thereof, an epoxy resin composition for sealing a semiconductor device:
<Formula 2>

(In Formula 2, R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ , R ₈ are each independently an alkyl group having 1 to 12 carbon atoms or 1 to 12 carbon atoms Is an alkoxy group of,
Y is an alkylene group having 1 to 10 carbon atoms, an arylene group having 6 to 20 carbon atoms, or the following formula (3),
<Formula 3>

(In Formula 3, * is a linking site, R ₉ , R ₁₀ are each independently an alkyl group having 1 to 12 carbon atoms or an alkoxy group having 1 to 12 carbon atoms, a and b are each independently It is an integer of 0 to 4, Ar is represented by the following formula 4 or formula 5,
<Formula 4>

<Formula 5>

(In Formula 4 and Formula 5, * is a linking site, and Q ₁ , Q ₂ , and Q ₃ are each independently an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, or a carbon A haloalkyl group having 1 to 12 carbon atoms, o and p are each independently an integer of 0 to 3)
m, n are integers from 1 to 10,000),
<Formula 6>

(In Formula 6, R ₁ , R ₂ , R ₃ are each independently an alkyl group having 1 to 12 carbon atoms or an alkoxy group having 1 to 12 carbon atoms, a is an integer of 0 to 5, b , c is each independently an integer of 0 to 4, n is an integer of 1 to 3,000).
delete The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the modified polyphenylene oxide resin of Formula 2 is represented by the following Formula 7:
<Formula 7>

(In Chemical Formula 7, Y, m, and n are as defined in Chemical Formula 2).
delete The epoxy resin composition according to claim 1, wherein the modified polyphenylene oxide resin is contained in an amount of 10% to 100% by weight of the curing agent.
The epoxy resin composition according to claim 1, wherein the inorganic filler contains alumina.
The method of claim 1, wherein in the epoxy resin composition for sealing semiconductor elements
The epoxy resin is 0.5% to 20% by weight,
The curing agent is 0.1% to 13% by weight,
The inorganic filler is 70% to 95% by weight,
The curing accelerator is contained in an amount of 0.01% to 2% by weight, the epoxy resin composition for sealing a semiconductor device.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin composition for sealing a semiconductor device further comprises at least one of a coupling agent, a release agent, a colorant, an antioxidant, a flame retardant, and a stress reliever.
A semiconductor device sealed by using the epoxy resin composition for sealing a semiconductor device according to any one of claims 1, 3, and 5 to 8.