KR890700051A - 개선된 광-선택적 도금법 - Google Patents

개선된 광-선택적 도금법

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Publication number
KR890700051A
KR890700051A KR1019880700877A KR880700877A KR890700051A KR 890700051 A KR890700051 A KR 890700051A KR 1019880700877 A KR1019880700877 A KR 1019880700877A KR 880700877 A KR880700877 A KR 880700877A KR 890700051 A KR890700051 A KR 890700051A
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KR
South Korea
Prior art keywords
metal
lead
substrate
exposing
salt
Prior art date
Application number
KR1019880700877A
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English (en)
Inventor
에드워드 바움 가이트너 차알스
Original Assignee
퍼시픽 벨
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Publication date
Application filed by 퍼시픽 벨 filed Critical 퍼시픽 벨
Publication of KR890700051A publication Critical patent/KR890700051A/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1889Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • C23C18/1639Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1642Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868Radiation, e.g. UV, laser
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

내용 없음

Description

개선된 광-선택적 도금법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 하기 단계들을 포함하는, 팔라듐, 백금, 금, 은, 오스뮴, 인듐, 이리듐, 레늄 및 로듐으로 이루어진 군에서 선택된 귀금속의 광 선택적 금속 용착 방법 : 300nm 이상의 파장을 갖는 빛을 흡수하고, 단파장 자외선에 노출됨으로써 그의 금속이온의 산화상태가 바뀔수 있는 주석, 티탄 및 납으로 이루어진 군에서 선택된 금속의염의 금속이온으로 에너지를 전달시킬 수 있는 물질을 포함하는 반도체 기판을, 상기 귀금속을 받아들이기 위해 제공하는 단계 : 단파장 자외선에 노출됨으로써 그의 금속 이온의 산화 상태가 바뀔 수 있는, 주석, 티탄 및 납으로 이루어진 군에서 선택된 금속의 염을 함유하는 용액으로 상기 기판의 표면을 피복처리하는 단계 ; 상기 귀금속을 받아들이지 않은 상기 판의 영역을 390nm 이하이나 300nm 이상인 파장을 갖는 빛에 노출시키는 단계 및 상기 기판을 상기 귀금속 염의 용액에 노출시키는 단계.
  2. 제1항에 있어서, 상기 기판이 SnCI2로 피복처리되는 방법.
  3. 제1항에 있어서, 상기 물질이 티탄을 함유하는 방법.
  4. 제3항에 있어서, 상기 물질이 스트론튬 티타네이트인 방법.
  5. 제3항에 있어서, 상기 물질이 바륨 티티네이트인 방법.
  6. 제3항에 있어서, 상기 물질이 납 티타네이트인 방법.
  7. 제3항에 있어서, 상기 물질이 납 지르코 네이트 티타네이트인 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880700877A 1986-11-24 1987-11-24 개선된 광-선택적 도금법 KR890700051A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US934304 1986-11-24
US06/934,304 US4738869A (en) 1986-11-24 1986-11-24 Photoselective electroless plating method employing UV-absorbing substrates
PCT/US1987/003083 WO1988003846A1 (en) 1986-11-24 1987-11-24 An improved photo-selective plating method

Publications (1)

Publication Number Publication Date
KR890700051A true KR890700051A (ko) 1989-03-02

Family

ID=25465328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700877A KR890700051A (ko) 1986-11-24 1987-11-24 개선된 광-선택적 도금법

Country Status (7)

Country Link
US (1) US4738869A (ko)
EP (1) EP0290577A4 (ko)
JP (1) JPH01502123A (ko)
KR (1) KR890700051A (ko)
AU (1) AU8332387A (ko)
IL (1) IL84480A0 (ko)
WO (1) WO1988003846A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389496A (en) * 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US5034274A (en) * 1989-12-11 1991-07-23 Advanced Technology Materials, Inc. Salt-doped chaff fiber having an evanescent electromagnetic detection signature, and method of making the same
US5100764A (en) * 1989-12-26 1992-03-31 Iowa State University Research Foundation, Inc. Method of making patterned metal oxide films comprising a sol-gel of metal oxide and a photoactive compound
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
US5137844A (en) * 1991-04-05 1992-08-11 Polaroid Corporation Process to adjust output of light emitters
EP0517478B1 (en) * 1991-06-04 1998-08-12 Quantum Corporation Servo data recovery circuit for disk drive having digital embedded sector servo
JPH05148657A (ja) * 1991-10-04 1993-06-15 Toyota Central Res & Dev Lab Inc 光利用めつき液およびめつき方法
US5462897A (en) * 1993-02-01 1995-10-31 International Business Machines Corporation Method for forming a thin film layer
KR100996316B1 (ko) * 2003-11-20 2010-11-23 삼성전자주식회사 패키지를 허메틱 실링하기 위한 금속 패턴 형성방법
US20140226060A1 (en) * 2013-02-08 2014-08-14 Htc Corporation Electronic device and method for manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29015A (en) * 1860-07-03 Improvement in apparatus for distilling sea-water
US3035944A (en) * 1960-08-05 1962-05-22 Ben C Sher Electrical component preparation utilizing a pre-acid treatment followed by chemical metal deposition
USRE29015E (en) * 1968-04-09 1976-10-26 Western Electric Company, Inc. Method of generating precious metal-reducing patterns
US4084968A (en) * 1973-03-30 1978-04-18 U.S. Philips Corporation Method of manufacturing electrically conductive metal layers on substrates
US3928670A (en) * 1974-09-23 1975-12-23 Amp Inc Selective plating on non-metallic surfaces
SU759617A1 (ru) * 1978-02-13 1980-08-30 Lev S Gorker Раствор для химического никелирования керамики

Also Published As

Publication number Publication date
EP0290577A4 (en) 1989-03-14
WO1988003846A1 (en) 1988-06-02
EP0290577A1 (en) 1988-11-17
JPH01502123A (ja) 1989-07-27
US4738869A (en) 1988-04-19
AU8332387A (en) 1988-06-16
IL84480A0 (en) 1988-04-29

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