KR890005921A - Manufacturing method of high efficiency silicon solar cell - Google Patents

Manufacturing method of high efficiency silicon solar cell Download PDF

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Publication number
KR890005921A
KR890005921A KR870010676A KR870010676A KR890005921A KR 890005921 A KR890005921 A KR 890005921A KR 870010676 A KR870010676 A KR 870010676A KR 870010676 A KR870010676 A KR 870010676A KR 890005921 A KR890005921 A KR 890005921A
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KR
South Korea
Prior art keywords
layer
solar cell
manufacturing
kpa
high efficiency
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Application number
KR870010676A
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Korean (ko)
Inventor
홍성민
Original Assignee
안시환
삼성전자 주식회사
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Publication date
Application filed by 안시환, 삼성전자 주식회사 filed Critical 안시환
Priority to KR870010676A priority Critical patent/KR890005921A/en
Publication of KR890005921A publication Critical patent/KR890005921A/en

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Abstract

내용 없음No content

Description

고효율 실리콘 태양전지의 제조방법Manufacturing method of high efficiency silicon solar cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 종래의 비정질실리콘 태양전지의 단면도.2 is a cross-sectional view of a conventional amorphous silicon solar cell.

제3도는 본 발명 실리콘 태양전지의 단면도.3 is a cross-sectional view of the silicon solar cell of the present invention.

Claims (4)

금속전극(7)위에 단결정실리콘 P층 (6) 및 확산 공정으로 단결정실리콘 n층(5)을 형성시켜서 된 단결정실리콘 태양전지에 글루우방전법으로 비정질실리콘 p층(4) i층(3) n층(2) 차례로 증착하고 이에 투명전도막(1)을 스퍼터링법으로 1000Å-3000Å 정도로 증착하여서 된 것을 특징으로 하는 고효율 실리콘 태양전지의 제조방법.Monocrystalline silicon P layer (6) on the metal electrode (7) and the single crystal silicon n layer (5) formed by the diffusion process in the amorphous silicon p layer (4) i layer (3) n A method of manufacturing a highly efficient silicon solar cell, characterized in that it is deposited by layer (2) in turn and by depositing the transparent conductive film (1) at about 1000 mW-3000 mW by the sputtering method. 제1항에 있어서, 비정실 실리콘 P층(4)을 실란가스(SiH4)와 디보란가스(B2H6)을 혼합하여 200Å-500Å으로 제작하여서 된 것을 특징으로 하는 고효율 실리콘 태양전지의 제조방법.2. The high efficiency silicon solar cell according to claim 1, wherein the amorphous silicon P layer 4 is produced by mixing silane gas (SiH 4 ) and diborane gas (B 2 H 6 ) at 200 kPa-500 kPa. Manufacturing method. 제1항에 있어서 비정실실리콘 i층(3)을 실란가스(SiH4)만으로 500Å-600Å으로 제작하여서 된것을 특징으로 하는 고효율 실리콘 태양전지의 제조방법.The method of manufacturing a high efficiency silicon solar cell according to claim 1, wherein the amorphous silicon i layer (3) is made of 500 kPa-600 kPa using only silane gas (SiH 4 ). 제1항에 있어서 비정실실리콘 n층(2)을 실란 가스와 포스핀가스(PH3)을 혼합하여 100Å-200Å으로 제작하여서 된 것을 특징으로 하는 고효율 실리콘 태양전지의 제조방법.The method of manufacturing a high efficiency silicon solar cell according to claim 1, wherein the amorphous silicon n layer (2) is produced by mixing silane gas and phosphine gas (PH 3 ) to 100 kPa-200 kPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR870010676A 1987-09-25 1987-09-25 Manufacturing method of high efficiency silicon solar cell KR890005921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR870010676A KR890005921A (en) 1987-09-25 1987-09-25 Manufacturing method of high efficiency silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR870010676A KR890005921A (en) 1987-09-25 1987-09-25 Manufacturing method of high efficiency silicon solar cell

Publications (1)

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KR890005921A true KR890005921A (en) 1989-05-17

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KR870010676A KR890005921A (en) 1987-09-25 1987-09-25 Manufacturing method of high efficiency silicon solar cell

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KR (1) KR890005921A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100880946B1 (en) * 2006-07-03 2009-02-04 엘지전자 주식회사 Solar Cell and Manufacturing Method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100880946B1 (en) * 2006-07-03 2009-02-04 엘지전자 주식회사 Solar Cell and Manufacturing Method thereof

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