KR910007168A - Structure and manufacturing method of solar cell using amorphous silicon - Google Patents

Structure and manufacturing method of solar cell using amorphous silicon Download PDF

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Publication number
KR910007168A
KR910007168A KR1019890013192A KR890013192A KR910007168A KR 910007168 A KR910007168 A KR 910007168A KR 1019890013192 A KR1019890013192 A KR 1019890013192A KR 890013192 A KR890013192 A KR 890013192A KR 910007168 A KR910007168 A KR 910007168A
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KR
South Korea
Prior art keywords
amorphous silicon
silicon layer
solar cell
deposited
layer
Prior art date
Application number
KR1019890013192A
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Korean (ko)
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KR0136600B1 (en
Inventor
박병우
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인헌조
주식회사 금성사
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Priority to KR1019890013192A priority Critical patent/KR0136600B1/en
Publication of KR910007168A publication Critical patent/KR910007168A/en
Application granted granted Critical
Publication of KR0136600B1 publication Critical patent/KR0136600B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

내용 없음No content

Description

비정질 실리콘을 이용한 태양 전지의 구조 및 제조방법Structure and manufacturing method of solar cell using amorphous silicon

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1 도는 본 발명의 제조방법에 따른 플로우 챠트.1 is a flow chart according to the manufacturing method of the present invention.

제 2 도는 본 발명에 의한 태양 전지의 구조도.2 is a structural diagram of a solar cell according to the present invention.

Claims (3)

유리기판(1)위에 ITO(2)와 n형 비정질 실리콘층(4), 인트린식 비정실 실리콘층(5) 그리고 p형 비정질 실리콘층(6)을 형성한 후 메탈 마스크를 사용하여 알루미늄을 증착시켜 개별전극(7)을 형성하여서 된 태양전기에 있어서, 상기 ITO(2)와 n형 비정질 실리콘층(4)사이에 SiO2층(3)을 형성하여서 구성됨을 특징으로 하는 비정질 실리콘을 이용한 태양전지의 구조.ITO (2), n-type amorphous silicon layer (4), intrinsic amorphous silicon layer (5) and p-type amorphous silicon layer (6) are formed on the glass substrate (1), and then aluminum is deposited using a metal mask. Solar cell formed by forming an individual electrode (7), wherein the SiO 2 layer (3) is formed between the ITO (2) and the n-type amorphous silicon layer (4). Structure of the battery. 유기기판(1)위에 ITO(2) 투명전극을 증착시키고 레이저로 패터닝을 하는 통상의 제조 공정 후 순수한 SiH4가스를 약 200정도 CVD 방법으로 증착시키고 증착이 끝난 동일 진공실 내에서 SiH4가스 장치를 다운시킨 후 산소를 일정량 통하게 하면서 13.56MHZ의 라디오와 전원을 인가하여 플라즈마 방전을 유도하므로 기 증착된 박막 실리콘층에 SiO2층(3)이 형성되게 함을 특징으로 하는 비정질 실리콘을 이용한 태양전지의 제조방법.Pure SiH 4 gas is then added to the organic substrate (1) after about 200 nm of pure SiH 4 gas is deposited after the conventional manufacturing process. After depositing by CVD method and down the SiH 4 gas device in the same vacuum chamber after deposition, SiO 2 layer is applied to the thin film silicon layer which is deposited by inducing plasma discharge by applying radio and power of 13.56MHZ while passing a certain amount of oxygen. (3) to form a solar cell manufacturing method using amorphous silicon, characterized in that. ※ 참고사항 : 최초 출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed by the contents of the original application.
KR1019890013192A 1989-09-12 1989-09-12 The structure of solar cell and the fabrication method thereof KR0136600B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890013192A KR0136600B1 (en) 1989-09-12 1989-09-12 The structure of solar cell and the fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890013192A KR0136600B1 (en) 1989-09-12 1989-09-12 The structure of solar cell and the fabrication method thereof

Publications (2)

Publication Number Publication Date
KR910007168A true KR910007168A (en) 1991-04-30
KR0136600B1 KR0136600B1 (en) 1998-09-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013192A KR0136600B1 (en) 1989-09-12 1989-09-12 The structure of solar cell and the fabrication method thereof

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Publication number Publication date
KR0136600B1 (en) 1998-09-15

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