KR890004472B1 - Cmos 집적회호 - Google Patents

Cmos 집적회호 Download PDF

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Publication number
KR890004472B1
KR890004472B1 KR1019850000281A KR850000281A KR890004472B1 KR 890004472 B1 KR890004472 B1 KR 890004472B1 KR 1019850000281 A KR1019850000281 A KR 1019850000281A KR 850000281 A KR850000281 A KR 850000281A KR 890004472 B1 KR890004472 B1 KR 890004472B1
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KR
South Korea
Prior art keywords
circuit
mos transistor
cmos
power supply
integrated circuit
Prior art date
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Expired
Application number
KR1019850000281A
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English (en)
Korean (ko)
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KR850005736A (ko
Inventor
카즈히꼬 쯔지
세이지 야마구찌
에이스케 이찌노헤
Original Assignee
마쯔시다덴기산교 가부시기가이샤
야마시다 도시히꼬
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Publication date
Application filed by 마쯔시다덴기산교 가부시기가이샤, 야마시다 도시히꼬 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR850005736A publication Critical patent/KR850005736A/ko
Application granted granted Critical
Publication of KR890004472B1 publication Critical patent/KR890004472B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019850000281A 1984-01-20 1985-01-18 Cmos 집적회호 Expired KR890004472B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP85-281 1984-01-20
JP59008721A JPS60152055A (ja) 1984-01-20 1984-01-20 相補型ｍｏｓ半導体装置
JP8721 1984-01-20

Publications (2)

Publication Number Publication Date
KR850005736A KR850005736A (ko) 1985-08-28
KR890004472B1 true KR890004472B1 (ko) 1989-11-04

Family

ID=11700810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850000281A Expired KR890004472B1 (ko) 1984-01-20 1985-01-18 Cmos 집적회호

Country Status (3)

Country Link
US (1) US4672584A (https=)
JP (1) JPS60152055A (https=)
KR (1) KR890004472B1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
JPS63278248A (ja) * 1987-03-13 1988-11-15 Fujitsu Ltd ゲ−トアレイの基本セル
JP2722453B2 (ja) * 1987-06-08 1998-03-04 三菱電機株式会社 半導体装置
JPH0713871B2 (ja) * 1987-06-11 1995-02-15 三菱電機株式会社 ダイナミツクｒａｍ
JPS648659A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Supplementary semiconductor integrated circuit device
US5117274A (en) * 1987-10-06 1992-05-26 Motorola, Inc. Merged complementary bipolar and MOS means and method
US4947228A (en) * 1988-09-20 1990-08-07 At&T Bell Laboratories Integrated circuit power supply contact
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5003362A (en) * 1989-07-28 1991-03-26 Dallas Semiconductor Corporation Integrated circuit with high-impedance well tie
US5021858A (en) * 1990-05-25 1991-06-04 Hall John H Compound modulated integrated transistor structure
US5317183A (en) * 1991-09-03 1994-05-31 International Business Machines Corporation Substrate noise coupling reduction for VLSI applications with mixed analog and digital circuitry
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
JPH09199607A (ja) * 1996-01-18 1997-07-31 Nec Corp Ｃｍｏｓ半導体装置
US5883566A (en) * 1997-02-24 1999-03-16 International Business Machines Corporation Noise-isolated buried resistor
GB2394833B (en) * 2000-08-11 2005-03-16 Samsung Electronics Co Ltd Protection device with a silicon controlled rectifier
US7132696B2 (en) 2002-08-28 2006-11-07 Micron Technology, Inc. Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same
US7773442B2 (en) * 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
US9842629B2 (en) 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
FR2872630B1 (fr) * 2004-07-01 2006-12-01 St Microelectronics Sa Circuit integre tolerant au phenomene de verrouillage
JP5135815B2 (ja) * 2006-02-14 2013-02-06 ミツミ電機株式会社 半導体集積回路装置
US7834428B2 (en) * 2007-02-28 2010-11-16 Freescale Semiconductor, Inc. Apparatus and method for reducing noise in mixed-signal circuits and digital circuits
KR102248282B1 (ko) * 2014-01-21 2021-05-06 삼성전자주식회사 Cmos 반도체 장치
US10410934B2 (en) * 2017-12-07 2019-09-10 Micron Technology, Inc. Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure
US10861848B2 (en) * 2018-08-23 2020-12-08 Xilinx, Inc. Single event latch-up (SEL) mitigation techniques
EP3944316A1 (en) * 2020-07-21 2022-01-26 Nexperia B.V. An electrostatic discharge protection semiconductor structure and a method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910587B2 (ja) * 1977-08-10 1984-03-09 株式会社日立製作所 半導体装置の保護装置
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
JPS6046545B2 (ja) * 1980-05-16 1985-10-16 日本電気株式会社 相補型ｍｏｓ記憶回路装置

Also Published As

Publication number Publication date
JPS60152055A (ja) 1985-08-10
US4672584A (en) 1987-06-09
KR850005736A (ko) 1985-08-28
JPH0315348B2 (https=) 1991-02-28

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