FR2872630B1 - Circuit integre tolerant au phenomene de verrouillage - Google Patents

Circuit integre tolerant au phenomene de verrouillage

Info

Publication number
FR2872630B1
FR2872630B1 FR0407309A FR0407309A FR2872630B1 FR 2872630 B1 FR2872630 B1 FR 2872630B1 FR 0407309 A FR0407309 A FR 0407309A FR 0407309 A FR0407309 A FR 0407309A FR 2872630 B1 FR2872630 B1 FR 2872630B1
Authority
FR
France
Prior art keywords
integrated circuit
locking phenomenon
tolerant integrated
tolerant
phenomenon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0407309A
Other languages
English (en)
Other versions
FR2872630A1 (fr
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0407309A priority Critical patent/FR2872630B1/fr
Priority to US11/172,609 priority patent/US7868392B2/en
Publication of FR2872630A1 publication Critical patent/FR2872630A1/fr
Application granted granted Critical
Publication of FR2872630B1 publication Critical patent/FR2872630B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0407309A 2004-07-01 2004-07-01 Circuit integre tolerant au phenomene de verrouillage Expired - Fee Related FR2872630B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0407309A FR2872630B1 (fr) 2004-07-01 2004-07-01 Circuit integre tolerant au phenomene de verrouillage
US11/172,609 US7868392B2 (en) 2004-07-01 2005-06-30 Integrated circuit tolerant to the locking phenomenon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0407309A FR2872630B1 (fr) 2004-07-01 2004-07-01 Circuit integre tolerant au phenomene de verrouillage

Publications (2)

Publication Number Publication Date
FR2872630A1 FR2872630A1 (fr) 2006-01-06
FR2872630B1 true FR2872630B1 (fr) 2006-12-01

Family

ID=34947675

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0407309A Expired - Fee Related FR2872630B1 (fr) 2004-07-01 2004-07-01 Circuit integre tolerant au phenomene de verrouillage

Country Status (2)

Country Link
US (1) US7868392B2 (fr)
FR (1) FR2872630B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115050736B (zh) * 2022-06-10 2023-05-23 深圳市晶扬电子有限公司 低压工艺的静电保护器件及整体静电防护方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1175503A (fr) * 1981-07-17 1984-10-02 Andreas Demetriou Circuit d'excitation a cmos
JPS60111454A (ja) * 1983-11-21 1985-06-17 Mitsubishi Electric Corp 半導体集積回路
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
US4881107A (en) * 1987-07-03 1989-11-14 Nissan Motor Company, Ltd. IC device having a vertical MOSFET and an auxiliary component
IT1268070B1 (it) * 1994-06-06 1997-02-20 Cselt Centro Studi Lab Telecom Circuito in tecnologia cmos per il pilotaggo ad alta velocita' di sorgenti ottiche.
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
US6222254B1 (en) * 1997-03-31 2001-04-24 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US6005797A (en) * 1998-03-20 1999-12-21 Micron Technology, Inc. Latch-up prevention for memory cells
JP3928837B2 (ja) * 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
US6493275B2 (en) * 2000-08-07 2002-12-10 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and electronic equipment
JP4199476B2 (ja) * 2002-04-12 2008-12-17 株式会社ルネサステクノロジ 半導体装置の保護回路

Also Published As

Publication number Publication date
FR2872630A1 (fr) 2006-01-06
US7868392B2 (en) 2011-01-11
US20060081938A1 (en) 2006-04-20

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090331