KR890004468B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890004468B1
KR890004468B1 KR1019850001124A KR850001124A KR890004468B1 KR 890004468 B1 KR890004468 B1 KR 890004468B1 KR 1019850001124 A KR1019850001124 A KR 1019850001124A KR 850001124 A KR850001124 A KR 850001124A KR 890004468 B1 KR890004468 B1 KR 890004468B1
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South Korea
Prior art keywords
electrode
lead
gate
semiconductor device
control electrode
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Expired
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KR1019850001124A
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English (en)
Korean (ko)
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KR850006654A (ko
Inventor
노오 후도시 도꾸
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
가다야미 징 하찌로오
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Publication of KR850006654A publication Critical patent/KR850006654A/ko
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Publication of KR890004468B1 publication Critical patent/KR890004468B1/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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    • H10W76/138
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
KR1019850001124A 1984-03-15 1985-02-22 반도체 장치 Expired KR890004468B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59-51623 1984-03-15
JP59051623A JPS60194565A (ja) 1984-03-15 1984-03-15 半導体装置
JP59-51623 1984-03-15

Publications (2)

Publication Number Publication Date
KR850006654A KR850006654A (ko) 1985-10-14
KR890004468B1 true KR890004468B1 (ko) 1989-11-04

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Application Number Title Priority Date Filing Date
KR1019850001124A Expired KR890004468B1 (ko) 1984-03-15 1985-02-22 반도체 장치

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US (2) US4719500A (enExample)
EP (1) EP0159797B1 (enExample)
JP (1) JPS60194565A (enExample)
KR (1) KR890004468B1 (enExample)
DE (1) DE3572424D1 (enExample)

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JPS61113249A (ja) * 1984-11-08 1986-05-31 Mitsubishi Electric Corp 半導体装置
JPS62269322A (ja) * 1986-05-17 1987-11-21 Toshiba Corp 電力用半導体装置
DE3880730D1 (de) * 1987-03-25 1993-06-09 Bbc Brown Boveri & Cie Halbleiterbauelement mit einer steuerelektrode.
JPH0693468B2 (ja) * 1988-08-09 1994-11-16 株式会社東芝 圧接平型半導体装置
JP2502386B2 (ja) * 1989-04-11 1996-05-29 富士電機株式会社 半導体装置
JPH04352457A (ja) * 1991-05-30 1992-12-07 Mitsubishi Electric Corp 圧接型半導体装置及びその製造方法
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
JP3469304B2 (ja) * 1994-04-12 2003-11-25 三菱電機株式会社 半導体装置
DE4431294A1 (de) * 1994-09-02 1996-03-07 Abb Management Ag Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
JP4129082B2 (ja) * 1998-07-30 2008-07-30 三菱電機株式会社 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
WO2000042663A1 (fr) * 1999-01-18 2000-07-20 Mitsubishi Denki Kabushiki Kaisha Dispositif a semiconducteur colle par compression
JP4125908B2 (ja) 2002-03-28 2008-07-30 三菱電機株式会社 半導体装置
JP5040234B2 (ja) * 2006-09-26 2012-10-03 三菱電機株式会社 圧接型半導体装置
JP6320564B2 (ja) * 2014-04-10 2018-05-09 アーベーベー・シュバイツ・アーゲー ゲートリングのセンタリングおよび固定が改善されたターンオフ電力半導体およびその製造方法
RU2591744C2 (ru) * 2014-12-08 2016-07-20 Открытое акционерное общество "Электровыпрямитель" Тиристор
CN111681995B (zh) * 2020-04-29 2022-09-09 株洲中车时代半导体有限公司 晶闸管元件、晶闸管元件装配结构及软启动器

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US3636419A (en) * 1969-07-11 1972-01-18 Siemens Ag Pressure-biased semiconductor component free from damage to semiconductor body
JPS55121654A (en) * 1979-03-13 1980-09-18 Toshiba Corp Compression bonded semiconductor device
JPS56130969A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Semiconductor device
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS5762562A (en) * 1980-10-03 1982-04-15 Hitachi Ltd Semiconductor device
JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device
JPS58148433A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPS594033A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 圧接型半導体装置
JPS6055633A (ja) * 1983-09-07 1985-03-30 Hitachi Ltd 半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
KR850006654A (ko) 1985-10-14
DE3572424D1 (en) 1989-09-21
JPH0530076B2 (enExample) 1993-05-07
JPS60194565A (ja) 1985-10-03
US4719500A (en) 1988-01-12
EP0159797A2 (en) 1985-10-30
EP0159797B1 (en) 1989-08-16
EP0159797A3 (en) 1987-03-25
US4835119A (en) 1989-05-30

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