KR890004457B1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
KR890004457B1
KR890004457B1 KR8503025A KR850003025A KR890004457B1 KR 890004457 B1 KR890004457 B1 KR 890004457B1 KR 8503025 A KR8503025 A KR 8503025A KR 850003025 A KR850003025 A KR 850003025A KR 890004457 B1 KR890004457 B1 KR 890004457B1
Authority
KR
South Korea
Prior art keywords
blocks
bit line
line pairs
word
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8503025A
Other languages
English (en)
Korean (ko)
Other versions
KR850008569A (ko
Inventor
Yosihiro Dakeme
Tomio Nakano
Kimiaki Satto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR850008569A publication Critical patent/KR850008569A/ko
Application granted granted Critical
Publication of KR890004457B1 publication Critical patent/KR890004457B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR8503025A 1984-05-04 1985-05-03 Semiconductor memory device Expired KR890004457B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-088331 1984-05-04
JP59088331A JPS60234295A (ja) 1984-05-04 1984-05-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR850008569A KR850008569A (ko) 1985-12-18
KR890004457B1 true KR890004457B1 (en) 1989-11-04

Family

ID=13939890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8503025A Expired KR890004457B1 (en) 1984-05-04 1985-05-03 Semiconductor memory device

Country Status (5)

Country Link
US (1) US4636982A (enExample)
EP (1) EP0165106B1 (enExample)
JP (1) JPS60234295A (enExample)
KR (1) KR890004457B1 (enExample)
DE (1) DE3584189D1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199297A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体記憶装置
JPS62197992A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp ダイナミツクｒａｍ
JPH07111823B2 (ja) * 1986-03-18 1995-11-29 三菱電機株式会社 半導体記憶装置
JPH06101229B2 (ja) * 1986-09-09 1994-12-12 三菱電機株式会社 ダイナミツク・ランダム・アクセス・メモリ
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset
JPS63113298U (enExample) * 1987-01-12 1988-07-21
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
US5172335A (en) * 1987-02-23 1992-12-15 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US4935901A (en) * 1987-02-23 1990-06-19 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US5222047A (en) * 1987-05-15 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for driving word line in block access memory
US5274596A (en) * 1987-09-16 1993-12-28 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having simultaneous operation of adjacent blocks
US4975874B1 (en) * 1988-11-01 1997-09-23 Texas Instruments Inc Metrix interconnection system with different width conductors
US4989180A (en) * 1989-03-10 1991-01-29 Board Of Regents, The University Of Texas System Dynamic memory with logic-in-refresh
US5777608A (en) * 1989-03-10 1998-07-07 Board Of Regents, The University Of Texas System Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories
US5758148A (en) * 1989-03-10 1998-05-26 Board Of Regents, The University Of Texas System System and method for searching a data base using a content-searchable memory
JP2875321B2 (ja) * 1990-01-29 1999-03-31 沖電気工業株式会社 半導体記憶装置
US5036493A (en) * 1990-03-15 1991-07-30 Digital Equipment Corporation System and method for reducing power usage by multiple memory modules
JP3058431B2 (ja) * 1990-06-12 2000-07-04 株式会社東芝 半導体記憶装置
KR920005150A (ko) * 1990-08-31 1992-03-28 김광호 씨모오스디램의 센스 앰프 구성방법
KR950004853B1 (ko) * 1991-08-14 1995-05-15 삼성전자 주식회사 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치
JPH05144263A (ja) * 1991-11-20 1993-06-11 Fujitsu Ltd 半導体記憶装置
JP3068352B2 (ja) * 1992-12-01 2000-07-24 日本電気株式会社 半導体メモリ
JP2566517B2 (ja) * 1993-04-28 1996-12-25 三菱電機株式会社 ダイナミック型半導体記憶装置
KR970001699B1 (ko) * 1994-03-03 1997-02-13 삼성전자 주식회사 자동프리차아지기능을 가진 동기식 반도체메모리장치
US6148034A (en) * 1996-12-05 2000-11-14 Linden Technology Limited Apparatus and method for determining video encoding motion compensation vectors
US6404660B1 (en) * 1999-12-23 2002-06-11 Rambus, Inc. Semiconductor package with a controlled impedance bus and method of forming same
US7120761B2 (en) * 2000-12-20 2006-10-10 Fujitsu Limited Multi-port memory based on DRAM core
US6889304B2 (en) 2001-02-28 2005-05-03 Rambus Inc. Memory device supporting a dynamically configurable core organization
US7500075B1 (en) 2001-04-17 2009-03-03 Rambus Inc. Mechanism for enabling full data bus utilization without increasing data granularity
US6825841B2 (en) * 2001-09-07 2004-11-30 Rambus Inc. Granularity memory column access
US6903956B2 (en) * 2002-09-27 2005-06-07 Oki Electric Industry Co., Ltd. Semiconductor memory device
US8190808B2 (en) * 2004-08-17 2012-05-29 Rambus Inc. Memory device having staggered memory operations
US7280428B2 (en) * 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
US7254075B2 (en) * 2004-09-30 2007-08-07 Rambus Inc. Integrated circuit memory system having dynamic memory bank count and page size
US8595459B2 (en) 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US7130238B1 (en) * 2005-01-21 2006-10-31 Altera Corporation Divisible true dual port memory system supporting simple dual port memory subsystems
US7289369B2 (en) * 2005-04-18 2007-10-30 International Business Machines Corporation DRAM hierarchical data path
CN1870873A (zh) * 2005-05-28 2006-11-29 深圳富泰宏精密工业有限公司 铰链装置及应用该铰链装置的便携式电子装置
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
JP2013114701A (ja) * 2011-11-25 2013-06-10 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
US4520465A (en) * 1983-05-05 1985-05-28 Motorola, Inc. Method and apparatus for selectively precharging column lines of a memory
JPS60136087A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体記憶装置
JPH0743925B2 (ja) * 1984-03-28 1995-05-15 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0165106A3 (en) 1989-02-15
US4636982A (en) 1987-01-13
JPH0527194B2 (enExample) 1993-04-20
EP0165106B1 (en) 1991-09-25
DE3584189D1 (de) 1991-10-31
JPS60234295A (ja) 1985-11-20
EP0165106A2 (en) 1985-12-18
KR850008569A (ko) 1985-12-18

Similar Documents

Publication Publication Date Title
KR890004457B1 (en) Semiconductor memory device
KR900005563B1 (en) Semiconductor memory device having nibble mode function
IE810717L (en) Semiconductor memory device
KR900006318B1 (en) Gate array intergrated circuit device and method thereof for various bit-word construstions
MY100970A (en) Semiconductor memory device
TW332927B (en) Sense amplifier
FR2688328B1 (fr) Circuit a redondance de rangees pour dispositif a memoire a semi-conducteurs pour reparer ou remplacer une cellule defectueuse d'un reseau de cellules a memoire.
JPS5766587A (en) Static semiconductor storage device
EP0929077A3 (en) Semiconductor memory with built-in parallel bit test mode
EP0264893A3 (en) Semiconductor memory
EP0118878A3 (en) Semiconductor memory device
GB2231984B (en) Semiconductor memory device with redundant block
JPS563499A (en) Semiconductor memory device
DE3485084D1 (de) Halbleiterspeichergeraet.
EP0318952A3 (en) Semiconductor memory device having a function of simultaneously clearing part of memory date
EP0588661A3 (en) Semiconductor read only memory
MX9502241A (es) Dispositivo semiconductor de memoria para obtener un ancho de banda grande o alto y metodo para arreglar las lineas de señales para el mismo.
EP0107387A3 (en) Semiconductor memory device
EP0101884A3 (en) Monolithic semiconductor memory
EP0272980A3 (en) Boundary-free semiconductor memory device
HK7086A (en) Memory
EP0342875A3 (en) Partial random access memory
EP0166642A3 (en) Block-divided semiconductor memory device having divided bit lines
ATE70921T1 (de) Direktzugriffsspeicher.
JPS5782288A (en) Dynamic memory

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

O035 Opposition [patent]: request for opposition

Free format text: OPPOSITION NUMBER: 001989000684; OPPOSITION DATE: 19891219

PO0301 Opposition

St.27 status event code: A-2-3-E10-E11-opp-PO0301

Opposition date: 19891219

Opposition reference: 101989000684

Opposition grounds text: 01 20

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

O122 Withdrawal of opposition [patent]
PO1201 Withdrawal of opposition

St.27 status event code: A-2-3-E10-E15-rvc-PO1201

E701 Decision to grant or registration of patent right
O073 Decision to grant registration after opposition [patent]: decision to grant registration
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PO0701 Decision to grant registration after opposition

St.27 status event code: A-3-4-F10-F13-opp-PO0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

FPAY Annual fee payment

Payment date: 19921006

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19931105

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19931105

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000