KR890004457B1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
KR890004457B1
KR890004457B1 KR8503025A KR850003025A KR890004457B1 KR 890004457 B1 KR890004457 B1 KR 890004457B1 KR 8503025 A KR8503025 A KR 8503025A KR 850003025 A KR850003025 A KR 850003025A KR 890004457 B1 KR890004457 B1 KR 890004457B1
Authority
KR
South Korea
Prior art keywords
blocks
bit line
line pairs
word
memory device
Prior art date
Application number
KR8503025A
Other languages
English (en)
Other versions
KR850008569A (ko
Inventor
Yosihiro Dakeme
Tomio Nakano
Kimiaki Satto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR850008569A publication Critical patent/KR850008569A/ko
Application granted granted Critical
Publication of KR890004457B1 publication Critical patent/KR890004457B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR8503025A 1984-05-04 1985-05-03 Semiconductor memory device KR890004457B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-088331 1984-05-04
JP59088331A JPS60234295A (ja) 1984-05-04 1984-05-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR850008569A KR850008569A (ko) 1985-12-18
KR890004457B1 true KR890004457B1 (en) 1989-11-04

Family

ID=13939890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8503025A KR890004457B1 (en) 1984-05-04 1985-05-03 Semiconductor memory device

Country Status (5)

Country Link
US (1) US4636982A (ko)
EP (1) EP0165106B1 (ko)
JP (1) JPS60234295A (ko)
KR (1) KR890004457B1 (ko)
DE (1) DE3584189D1 (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199297A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体記憶装置
JPS62197992A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp ダイナミツクｒａｍ
JPH07111823B2 (ja) * 1986-03-18 1995-11-29 三菱電機株式会社 半導体記憶装置
JPH06101229B2 (ja) * 1986-09-09 1994-12-12 三菱電機株式会社 ダイナミツク・ランダム・アクセス・メモリ
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset
JPS63113298U (ko) * 1987-01-12 1988-07-21
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
US4935901A (en) * 1987-02-23 1990-06-19 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US5172335A (en) * 1987-02-23 1992-12-15 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US5222047A (en) * 1987-05-15 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for driving word line in block access memory
US5274596A (en) * 1987-09-16 1993-12-28 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having simultaneous operation of adjacent blocks
US4975874B1 (en) * 1988-11-01 1997-09-23 Texas Instruments Inc Metrix interconnection system with different width conductors
US4989180A (en) * 1989-03-10 1991-01-29 Board Of Regents, The University Of Texas System Dynamic memory with logic-in-refresh
US5758148A (en) * 1989-03-10 1998-05-26 Board Of Regents, The University Of Texas System System and method for searching a data base using a content-searchable memory
US5777608A (en) * 1989-03-10 1998-07-07 Board Of Regents, The University Of Texas System Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories
JP2875321B2 (ja) * 1990-01-29 1999-03-31 沖電気工業株式会社 半導体記憶装置
US5036493A (en) * 1990-03-15 1991-07-30 Digital Equipment Corporation System and method for reducing power usage by multiple memory modules
JP3058431B2 (ja) * 1990-06-12 2000-07-04 株式会社東芝 半導体記憶装置
KR920005150A (ko) * 1990-08-31 1992-03-28 김광호 씨모오스디램의 센스 앰프 구성방법
KR950004853B1 (ko) * 1991-08-14 1995-05-15 삼성전자 주식회사 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치
JPH05144263A (ja) * 1991-11-20 1993-06-11 Fujitsu Ltd 半導体記憶装置
JP3068352B2 (ja) * 1992-12-01 2000-07-24 日本電気株式会社 半導体メモリ
JP2566517B2 (ja) * 1993-04-28 1996-12-25 三菱電機株式会社 ダイナミック型半導体記憶装置
US6148034A (en) * 1996-12-05 2000-11-14 Linden Technology Limited Apparatus and method for determining video encoding motion compensation vectors
US6404660B1 (en) * 1999-12-23 2002-06-11 Rambus, Inc. Semiconductor package with a controlled impedance bus and method of forming same
US7120761B2 (en) 2000-12-20 2006-10-10 Fujitsu Limited Multi-port memory based on DRAM core
US6889304B2 (en) 2001-02-28 2005-05-03 Rambus Inc. Memory device supporting a dynamically configurable core organization
US7500075B1 (en) * 2001-04-17 2009-03-03 Rambus Inc. Mechanism for enabling full data bus utilization without increasing data granularity
US6825841B2 (en) * 2001-09-07 2004-11-30 Rambus Inc. Granularity memory column access
US6903956B2 (en) * 2002-09-27 2005-06-07 Oki Electric Industry Co., Ltd. Semiconductor memory device
US8190808B2 (en) * 2004-08-17 2012-05-29 Rambus Inc. Memory device having staggered memory operations
US7280428B2 (en) * 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
US7254075B2 (en) * 2004-09-30 2007-08-07 Rambus Inc. Integrated circuit memory system having dynamic memory bank count and page size
US8595459B2 (en) * 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US7130238B1 (en) * 2005-01-21 2006-10-31 Altera Corporation Divisible true dual port memory system supporting simple dual port memory subsystems
US7289369B2 (en) * 2005-04-18 2007-10-30 International Business Machines Corporation DRAM hierarchical data path
CN1870873A (zh) * 2005-05-28 2006-11-29 深圳富泰宏精密工业有限公司 铰链装置及应用该铰链装置的便携式电子装置
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
JP2013114701A (ja) * 2011-11-25 2013-06-10 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
US4520465A (en) * 1983-05-05 1985-05-28 Motorola, Inc. Method and apparatus for selectively precharging column lines of a memory
JPS60136087A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体記憶装置
JPH0743925B2 (ja) * 1984-03-28 1995-05-15 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0165106B1 (en) 1991-09-25
JPH0527194B2 (ko) 1993-04-20
US4636982A (en) 1987-01-13
EP0165106A2 (en) 1985-12-18
DE3584189D1 (de) 1991-10-31
KR850008569A (ko) 1985-12-18
JPS60234295A (ja) 1985-11-20
EP0165106A3 (en) 1989-02-15

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Legal Events

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O035 Opposition [patent]: request for opposition

Free format text: OPPOSITION NUMBER: 001989000684; OPPOSITION DATE: 19891219

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O073 Decision to grant registration after opposition [patent]: decision to grant registration
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Payment date: 19921006

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