KR890004457A - 자력검출용 반도체소자 및 그 제조방법 - Google Patents

자력검출용 반도체소자 및 그 제조방법

Info

Publication number
KR890004457A
KR890004457A KR1019880010876A KR880010876A KR890004457A KR 890004457 A KR890004457 A KR 890004457A KR 1019880010876 A KR1019880010876 A KR 1019880010876A KR 880010876 A KR880010876 A KR 880010876A KR 890004457 A KR890004457 A KR 890004457A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor element
magnetic detection
magnetic
detection
Prior art date
Application number
KR1019880010876A
Other languages
English (en)
Other versions
KR910007386B1 (ko
Inventor
도시가즈 후쿠다
도루 스가
유타카 도미사와
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR890004457A publication Critical patent/KR890004457A/ko
Application granted granted Critical
Publication of KR910007386B1 publication Critical patent/KR910007386B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
KR1019880010876A 1987-08-28 1988-08-26 자력검출용 반도체소자 및 그 제조방법 KR910007386B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-214312 1987-08-28
JP62214312A JPH0797666B2 (ja) 1987-08-28 1987-08-28 磁力検出用半導体素子の製造方法

Publications (2)

Publication Number Publication Date
KR890004457A true KR890004457A (ko) 1989-04-22
KR910007386B1 KR910007386B1 (ko) 1991-09-25

Family

ID=16653661

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880010876A KR910007386B1 (ko) 1987-08-28 1988-08-26 자력검출용 반도체소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US4972241A (ko)
EP (1) EP0304945B1 (ko)
JP (1) JPH0797666B2 (ko)
KR (1) KR910007386B1 (ko)
DE (1) DE3850463T2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216405A (en) * 1991-01-14 1993-06-01 General Motors Corporation Package for the magnetic field sensitive device
US5173758A (en) * 1991-10-28 1992-12-22 General Motors Corporation Hall generator with four arms
US5196821A (en) * 1992-03-09 1993-03-23 General Motors Corporation Integrated magnetic field sensor
US5486804A (en) * 1993-12-03 1996-01-23 Hughes Aircraft Company Integrated magnetoresistive sensor fabrication method and apparatus
WO1997018586A1 (en) * 1995-11-15 1997-05-22 Norand Corporation Reduction of electromagnetic interference in integrated circuit device packages
JP3641796B2 (ja) * 1999-10-18 2005-04-27 Ｎｅｃトーキン株式会社 電磁干渉抑制体
KR101028258B1 (ko) 2007-02-13 2011-04-11 가시오게산키 가부시키가이샤 자성체 분말을 혼입하는 반도체장치 및 그 제조방법
US8106654B2 (en) 2008-05-27 2012-01-31 Infineon Technologies Ag Magnetic sensor integrated circuit device and method
US9000763B2 (en) * 2011-02-28 2015-04-07 Infineon Technologies Ag 3-D magnetic sensor
US10128434B2 (en) * 2016-12-09 2018-11-13 Rohm Co., Ltd. Hall element module

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS555870B2 (ko) * 1974-06-19 1980-02-12
JPS51132982A (en) * 1975-05-14 1976-11-18 Asahi Chem Ind Co Ltd High sensitivity hall element
JPS51147191A (en) * 1975-06-12 1976-12-17 Asahi Chem Ind Co Ltd Hall element and its method of manufacturing
US4048670A (en) * 1975-06-30 1977-09-13 Sprague Electric Company Stress-free hall-cell package
US4188605A (en) * 1978-07-21 1980-02-12 Stout Glenn M Encapsulated Hall effect device
JPS5934681A (ja) * 1982-08-20 1984-02-25 Sanyo Electric Co Ltd ホ−ル素子
JPS5934680A (ja) * 1982-08-20 1984-02-25 Sanyo Electric Co Ltd ホ−ル素子
JPS60226190A (ja) * 1984-04-25 1985-11-11 Matsushita Electronics Corp ホ−ル効果装置

Also Published As

Publication number Publication date
US4972241A (en) 1990-11-20
EP0304945B1 (en) 1994-06-29
JPH0797666B2 (ja) 1995-10-18
EP0304945A2 (en) 1989-03-01
KR910007386B1 (ko) 1991-09-25
DE3850463D1 (de) 1994-08-04
JPS6457769A (en) 1989-03-06
DE3850463T2 (de) 1994-10-13
EP0304945A3 (en) 1990-06-06

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Legal Events

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E701 Decision to grant or registration of patent right
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Payment date: 20070828

Year of fee payment: 17

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