WO1997018586A1 - Reduction of electromagnetic interference in integrated circuit device packages - Google Patents

Reduction of electromagnetic interference in integrated circuit device packages Download PDF

Info

Publication number
WO1997018586A1
WO1997018586A1 PCT/US1996/017916 US9617916W WO9718586A1 WO 1997018586 A1 WO1997018586 A1 WO 1997018586A1 US 9617916 W US9617916 W US 9617916W WO 9718586 A1 WO9718586 A1 WO 9718586A1
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
conductors
inductance
magnetic
ferrite
Prior art date
Application number
PCT/US1996/017916
Other languages
French (fr)
Inventor
Steven E. Koenck
Original Assignee
Norand Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norand Corporation filed Critical Norand Corporation
Publication of WO1997018586A1 publication Critical patent/WO1997018586A1/en
Priority to US10/684,072 priority Critical patent/US7125743B2/en
Priority to US11/551,712 priority patent/US20070096273A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the present invention relates generally to reduction of electromagnetic
  • EMI electromagnetic interference
  • a recurring observation in the analysis of EMI performance in products that use VLSI integrated circuits is that there is a significant amount of emission radiated directly from the integrated circuit package itself before the signal connections from the device are available on an external pin This is particularly evident in devices that have a large number of pins, such as a common 208 pin Quad Flat Pack (QFP) device
  • QFP Quad Flat Pack
  • a 208 pin QFP device is typically on the order of 1 inch square with the actual integrated circuit itself occupying only a small amount of the real estate of the QFP package
  • the integrated circuit (IC) is relatively small being on the order of 0 2 square inches to 0.3 square inches
  • there must be internal conductor leads from the IC silicon wafer to the external pins of the device This is typically implemented with a lead frame of metal strips etched or stamped from a sheet of mate ⁇ al to support the integrated circuit chip and to provide a signal path for the input and output (I/O) pins of the QFP device
  • the described physical lead lengths in typical integrated circuit packaging designs generally cause two problems
  • the first problem is mid and high frequency signal degradation introduced by the inherent series inductance of the conductor leads which is particularly a problem for the power and ground feeds.
  • the second problem is that the conductor leads may radiate EMI energy as an antenna thereby interfering with the signals an adjacent conductor leads in the package and with other signal paths and components in the electronic device in which the integrated circuit is utilized.
  • the techniques known in the art for reducing electromagnetic interference are effective only external to the integrated circuit device package Thus, there lies a need for a method and apparatus to reduce or eliminate electromagnetic radiation internal to the integrated circuit device package itself
  • the present invention provides reduction and elimination of electromagnetic radiation in an integrated circuit
  • the electromagnetic radiation is reduced or eliminated, and electrical signals internal to the integrated circuit package are conditioned internally within the integrated circuit package itself
  • FIG 1 is a somewhat diagrammatic representation of the internal design of a typical integrated circuit package
  • FIG 2 is a schematic illustration of the electrical model of a typical integrated circuit device package
  • FIG 3 is a somewhat schematic illustration of the electrical model of an integrated circuit device package utilizing the present invention
  • FIG 4 illustrates the resulting characteristic curve of the elect ⁇ cal signals conditioned by the present invention
  • FIG. 5 is a schematic elevation view of an integrated circuit device package of the present invention illustrating the magnetic flux pattern occurring therein
  • FIG 6 is a somewhat diagrammatic representation of the internal design of an integrated circuit device package utilizing the present invention
  • FIG. 7 is a schematic elevation view of an integrated circuit device package of a preferred embodiment of the present invention illustrating the magnetic flux pattern occurring therein;
  • FIG 8 is a somewhat diagrammatic representation of the internal design of an integrated circuit device package utilizing a preferred embodiment of the present invention.
  • FIG 9 is an elect ⁇ cal schematic diagram of the equivalent circuit model of a preferred embodiment of the present invention.
  • FIG 1 illustrates the model of a typical Quad Flat Pack (QFP) integrated circuit device
  • the Quad Flat Pack may comprise a 1 0 inch square integrated circuit device package 10
  • the integrated circuit (IC) 12 itself may only comprise a 0 2 inch square or 0 3 inch square wafer of silicon containing the actual integrated circuitry of the integrated circuit package 10
  • the device package 10 is formed by encapsulating the integrated circuit 12 in a plastic medium 14 which defines the physical dimensions of the device package 10
  • the plastic medium 14 protects and supports the integrated circuit 12 and contains the lead conductors which electrically connect the IC 12 to the external input/output (I/O) pins 18 of the device package 10
  • the lead frame conductors 16 connect to the IC 12 via bonding wires 20 which directly connect to strategic circuitry nodes on the IC 12.
  • FIG. 2 illustrates the electrical model of the typical integrated circuit package of FIG. 1
  • FIG. 2 illustrates how the conductor leads 16 from the I/O pins 18 to the integrated circuit 12 are not ideal transmission lines but in practice exhibit a per length se ⁇ es inductance Longer lengths of the conductor leads 16 result in larger values of the inherent series inductance Input leads 16 connect the I/O pins 18 to input buffers 22 on the integrated circuit 12, and output leads 16 connect the I/O pins 18 to output buffers on the integrated circuit 12.
  • the input and output conductor leads 16 exhibit input series inductance L, N and output series inductance L ou ⁇
  • the inductance of the V cc and V GND leads would be zero henries
  • the effective inductance of the V cc and V GND rails is effectively reduced with multiple parallel branches since there are typically multiple V cc and V GND pins in a given integrated circuit device package 10
  • Utilization of multiple signal paths to reduce the effective inductance of a data signal path 16 is not feasible, therefore the effective series inductances L, N and L ou ⁇ of the lead conductors 16 preferably exhibit a small amount of "lossy" inductance
  • the packaging function for the integrated circuit 12 is preferably completed by placing the lead frame 16 with bonded integrated circuit 12 into a injection molding cavity where molten plastic is injected to encapsulate the lead frame 16 and integrated circuit 12 to form the device package 10
  • the plastic material 14 is preferably electrically passive and electrically non-conducting so that it will cause no degradation of the electrical signals to and from the integrated circuit 12
  • a modeled plastic material 14 having desired electromagnetic properties to advantageously affect the signals to and from the integrated circuit 12 as the signals are routed through the lead frame 16 of the device is utilized
  • a small amount of femte powder is preferably blended with the plastic material 14 to achieve the slightly lossy magnetic characteristic of the encapsulating plastic medium 14 surrounding the lead frame conductors 16 Fer ⁇ te is preferred because of its high resistivity and permeability
  • FIG 3 illustrates the effects of the introduction of femte powder into the encapsulating plastic of the integrated circuit device package of FIG 1
  • the introduction of a fer ⁇ te material into the encapsulating plastic 14 alters the permeance of the encapsulating medium 14 and thereby affects the electrical characteristics of the inherent series impedance of the lead conductors 16
  • the ferrite material in the encapsulating medium 14 causes the series inductance of the lead conductors 16A and 16B to behave as a lossy inductor L F .
  • the ferrite material contributes to the mutual inductance M F and resulting coupling primarily associated with adjacent leads 16A and 16B
  • the ferrite material exhibits hysteresis loss, but because fer ⁇ te has high characteristic resistivity, it exhibits no eddy-current loss
  • a magnetic material such as ferrite produces an effect opposite to the effect resulting with magnetic core inductors, instead of concentrating the magnetic flux within the center of the inductor to thereby augment the effective inductance as with a magnetic core, the increased permeance of the surrounding medium 14 due to the magnetic material tends to distribute the flux throughout the medium away from the inductor thereby attenuating the effective inductance
  • FIG 4 illustrates the resulting preferred characteristic signal shape of a given data signal when a ferrite material is introduced into the encapsulating medium
  • the lossy inductor L F as shown in FIG 3 would serve to attenuate only the highest frequency signal components while introducing generally little true inductance effects of overshoot and ringing associated with the series inductance of the leads 16 when no femte is present
  • the Q of the inherent series inductance of the conductor leads 16 is thereby minimized rather than maximized
  • the intentionally introduced inductor loss reduces the undesired effects of the inherent series inductance such as overshoot and ringing
  • FIG. 5 illustrates a two conductor mutual coupling model of the present invention
  • Introduction of mutual coupling and signal crosstalk between two adjacent lead conductors 16A and 16B would be an undesirable effect that is preferably minimized
  • Current flowing into conductor 16A introduces magnetic flux 32 through adjacent conductor 16B thereby inducing a current therein
  • a relatively small amount of femte mate ⁇ al is blended in the encapsulating plastic 14 resulting in a relative permeability of the surrounding material 14 that is not too high to cause significant mutual coupling but yet sufficient to desirably affect the series inductance of the lead conductors 16.
  • the relative permittivity of the encapsulating medium 14 ranges from 5 to 10.
  • the actual amount of mutual inductance M F between two adjacent lead conductors 16A and 16B is small with respect to the self-inductance L F of each conductor 16.
  • the reduction of crosstalk on any particular conductor 16 may be further achieved by placing that particular lead conductor 16 adjacent to a V cc or V GND lead to avoid any coupling to another data signal path.
  • FIG. 6 illustrates a preferred embodiment of the present invention in which mutual coupling between adjacent leads is eliminated
  • the virtual elimination of the mutual inductance may be achieved by molding the device package 10 in two steps.
  • the first step preferably comprises constructing the lead frame 16 and then forming or molding individual fer ⁇ te "microbeads" 30 on each lead 16.
  • the microbeads 30 are preferably o f fset so they do not interfere with adjacent microbeads 30.
  • the microbeads 30 are made of pure ferrite mate ⁇ al which may be constructed using known ceramic techniques, and the microbeads 30 would be formed as an integral part of the lead frame 16.
  • the microbeads 30 are utilized in a manner analogous to the utilization of ferrite bead chokes in radio-frequency transmission lines and antennas.
  • the bead surrounds the transmission line and effectively chokes undesired high frequency signals immediately external to the transmission line that are the source of electromagnetic interference without affecting data signals passing therethrough.
  • the second step preferably comprises ordinary plastic encapsulation of the frame 16 and the integrated circuit 12 upon completion of the bonding and wiring of the IC 12 to the lead frame 16.
  • the inclusion of a ferrite microbead 30 on any given lead 16 is optional depending upon the type of signal transmitted thereon. For example, V cc and V GND signals perform better if there is no ferrite bead 30 on those leads.
  • the standard lead frame 16 is constructed with a microbead 30 on each lead 16. Microbeads 16 may be selectively removed by crushing away the undesired beads 30 which is facilitated by the inherent brittleness of ferrite.
  • a simple press may be utilized having small crushing pins arranged above the corresponding microbeads to be crushed in which all undesired microbeads 30 may be removed in a single step.
  • FIG. 7 illustrates a preferred embodiment of the present invention in which the magnetic flux is contained within the ferrite beads.
  • the ferrite bead 30 surrounding conductor lead 16A completely contains the magnetic flux 32 generated by the current flowing into conductor lead 16A. Thus, no current is induced in conductor lead 16B from the magnetic flux 32 created by the current flowing through conductor lead 16A.
  • only the microbeads 30 contain ferrite wherein the encapsulating medium 14 entirely comprises non-magnetic plastic.
  • a small amount of ferrite may be blended in with the encapsulating plastic 14 in conjunction with the utilization of ferrite beads to further achieve the reduction of electromagnetic interference.
  • FIG. 8 illustrates the preferred placement of the ferrite beads of the present invention relative to the integrated circuit wafer in the device package.
  • the most effective physical location for the microbeads 30 is as near to the integrated circuit 12 as possible. With the required close spacing of the lead frame conductors 16 near the IC nor. ; 'iy pads 20, the physical size of a microbead 30 may not be very laiyu w, ... yer the effects of the reduced size are offset by the fact that the placement of the ferrite microbead 30 near the IC 12 is nearly ideal.
  • FIG. 9 illustrates the resulting electrical circuit model of a given conductor path in an integrated circuit device package of the present invention.
  • An output signal V ou ⁇ from the integrated circuit 12 feeds into an output buffer 24 which is externally connected through an IC bonding wire pad 20.
  • the bonding wire 20 exhibits a small series inductance L 8 wh rn is small relative to the inductance L F of the ferrite microbead 30.
  • the i frame conductor 16 exhibits a characteristic lumped series inducta 1 ; : • ._ ou ⁇ and shunt capacitance C ou ⁇ , the effects of which are negligible compared to the inductance L F of the microbead 30, and extends through the encapsulating medium 14.
  • the effects of inductance L ou ⁇ and capacitance C ou ⁇ may be further reduced by the blending of ferrite with the encapsulation material 14.
  • the lead frame conductor 16 connects to an external pin 18 on the exterior of the device package 10.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

EMI radiation in an integrated circuit device package (10) is reduced or eliminated by the introduction of a magnetic material into the encapsulating medium (14). The permeance of the magnetic encapsulating medium (14) affects the inherent series inductance of the lead frame conductors (16) to thereby reduce electromagnetic interference. Ferrite microbeads (30) are formed around the lead frame conductors (16) to contain the magnetic flux (32) generated by an electrical current signal and to attenuate the effects of mutual inductance.

Description

TITLE:
REDUCTION OF ELECTROMAGNETIC INTERFERENCE IN INTEGRATED CIRCUIT DEVICE PACKAGES
S P E C I F I C A T I O N
TECHNICAL FIELD
The present invention relates generally to reduction of electromagnetic
interference and specifically to reduction of electromagnetic interference generated
within an integrated circuit device package.
BACKGROUND OF THE INVENTION
Advents in the performance of microcomputer based electronics have resulted
in dramatic increases in operating speeds of the logic switching circuits Increased
switching and operating speeds correspond to increased bandwidths of the electronic
signals transmitted within the interior of an electronic device which become a
significant source for electromagnetic radiation causing interference with the intemal
circuitry of the device itself and with other electronic devices operating within the
vicinity of the device. The electromagnetic radiation emitted at these higher
frequencies may cause undesirable electromagnetic coupling between data paths
resulting in cross channel interference.
The amount of internally generated electromagnetic radiation must be limited to the guidelines and regulations set by governmental agencies such as the FCC in the United States and CISPR in European countries. Sources of electromagnetic radiation originating externally to the device may also affect and interfere with the operation of the device In general the problems resulting from unwanted electromagnetic radiation are classified as electromagnetic interference (EMI)
A recurring observation in the analysis of EMI performance in products that use VLSI integrated circuits is that there is a significant amount of emission radiated directly from the integrated circuit package itself before the signal connections from the device are available on an external pin This is particularly evident in devices that have a large number of pins, such as a common 208 pin Quad Flat Pack (QFP) device A 208 pin QFP device is typically on the order of 1 inch square with the actual integrated circuit itself occupying only a small amount of the real estate of the QFP package Typically, the integrated circuit (IC) is relatively small being on the order of 0 2 square inches to 0.3 square inches As a result, there must be internal conductor leads from the IC silicon wafer to the external pins of the device This is typically implemented with a lead frame of metal strips etched or stamped from a sheet of mateπal to support the integrated circuit chip and to provide a signal path for the input and output (I/O) pins of the QFP device
In such a design there may be a significant conductor length from the IC itself through the bonding wires and the lead frame conductors to the external pins of the device. This is especially true for pins at or near the corner of the device, in which case the conductor lead length may be well over 0.5 inch.
The described physical lead lengths in typical integrated circuit packaging designs generally cause two problems The first problem is mid and high frequency signal degradation introduced by the inherent series inductance of the conductor leads which is particularly a problem for the power and ground feeds. The second problem is that the conductor leads may radiate EMI energy as an antenna thereby interfering with the signals an adjacent conductor leads in the package and with other signal paths and components in the electronic device in which the integrated circuit is utilized. The techniques known in the art for reducing electromagnetic interference are effective only external to the integrated circuit device package Thus, there lies a need for a method and apparatus to reduce or eliminate electromagnetic radiation internal to the integrated circuit device package itself
SUMMARY OF THE INVENTION
The present invention provides reduction and elimination of electromagnetic radiation in an integrated circuit The electromagnetic radiation is reduced or eliminated, and electrical signals internal to the integrated circuit package are conditioned internally within the integrated circuit package itself
BRIEF DESCRIPTION OF THE DRAWINGS
The numerous objects and advantages of the present invention may be better understood by those skilled in the art by reference to the accompanying figures in which
FIG 1 is a somewhat diagrammatic representation of the internal design of a typical integrated circuit package,
FIG 2 is a schematic illustration of the electrical model of a typical integrated circuit device package,
FIG 3 is a somewhat schematic illustration of the electrical model of an integrated circuit device package utilizing the present invention,
FIG 4 illustrates the resulting characteristic curve of the electπcal signals conditioned by the present invention,
FIG. 5 is a schematic elevation view of an integrated circuit device package of the present invention illustrating the magnetic flux pattern occurring therein,
FIG 6 is a somewhat diagrammatic representation of the internal design of an integrated circuit device package utilizing the present invention, FIG. 7 is a schematic elevation view of an integrated circuit device package of a preferred embodiment of the present invention illustrating the magnetic flux pattern occurring therein;
FIG 8 is a somewhat diagrammatic representation of the internal design of an integrated circuit device package utilizing a preferred embodiment of the present invention, and
FIG 9 is an electπcal schematic diagram of the equivalent circuit model of a preferred embodiment of the present invention
DETAILED DESCRIPTION OF AN EXEMPLARY EMBODIMENT
FIG 1 illustrates the model of a typical Quad Flat Pack (QFP) integrated circuit device The Quad Flat Pack may comprise a 1 0 inch square integrated circuit device package 10 The integrated circuit (IC) 12 itself may only comprise a 0 2 inch square or 0 3 inch square wafer of silicon containing the actual integrated circuitry of the integrated circuit package 10 The device package 10 is formed by encapsulating the integrated circuit 12 in a plastic medium 14 which defines the physical dimensions of the device package 10 The plastic medium 14 protects and supports the integrated circuit 12 and contains the lead conductors which electrically connect the IC 12 to the external input/output (I/O) pins 18 of the device package 10 The lead frame conductors 16 connect to the IC 12 via bonding wires 20 which directly connect to strategic circuitry nodes on the IC 12.
FIG. 2 illustrates the electrical model of the typical integrated circuit package of FIG. 1 FIG. 2 illustrates how the conductor leads 16 from the I/O pins 18 to the integrated circuit 12 are not ideal transmission lines but in practice exhibit a per length seπes inductance Longer lengths of the conductor leads 16 result in larger values of the inherent series inductance Input leads 16 connect the I/O pins 18 to input buffers 22 on the integrated circuit 12, and output leads 16 connect the I/O pins 18 to output buffers on the integrated circuit 12. In general, the input and output conductor leads 16 exhibit input series inductance L,N and output series inductance Louτ Ideally, the inductance of the Vcc and VGND leads would be zero henries In a preferred embodiment of the present invention the effective inductance of the Vcc and VGND rails is effectively reduced with multiple parallel branches since there are typically multiple Vcc and VGND pins in a given integrated circuit device package 10 Utilization of multiple signal paths to reduce the effective inductance of a data signal path 16 is not feasible, therefore the effective series inductances L,N and Louτ of the lead conductors 16 preferably exhibit a small amount of "lossy" inductance By making the series inductance of the conductor leads 16 lossy, the detrimental EMI effects of the series inductances may be thereby reduced
Given the construction of the lead frame 16, the packaging function for the integrated circuit 12 is preferably completed by placing the lead frame 16 with bonded integrated circuit 12 into a injection molding cavity where molten plastic is injected to encapsulate the lead frame 16 and integrated circuit 12 to form the device package 10 The plastic material 14 is preferably electrically passive and electrically non-conducting so that it will cause no degradation of the electrical signals to and from the integrated circuit 12
In a preferred embodiment of the present invention a modeled plastic material 14 having desired electromagnetic properties to advantageously affect the signals to and from the integrated circuit 12 as the signals are routed through the lead frame 16 of the device is utilized A small amount of femte powder is preferably blended with the plastic material 14 to achieve the slightly lossy magnetic characteristic of the encapsulating plastic medium 14 surrounding the lead frame conductors 16 Ferπte is preferred because of its high resistivity and permeability
FIG 3 illustrates the effects of the introduction of femte powder into the encapsulating plastic of the integrated circuit device package of FIG 1 The introduction of a ferπte material into the encapsulating plastic 14 alters the permeance of the encapsulating medium 14 and thereby affects the electrical characteristics of the inherent series impedance of the lead conductors 16 The ferrite material in the encapsulating medium 14 causes the series inductance of the lead conductors 16A and 16B to behave as a lossy inductor LF. Further, the ferrite material contributes to the mutual inductance MF and resulting coupling primarily associated with adjacent leads 16A and 16B The ferrite material exhibits hysteresis loss, but because ferπte has high characteristic resistivity, it exhibits no eddy-current loss Increasing the permeance of the physical medium 14 surrounding the inductance with the presence of a magnetic material such as ferrite produces an effect opposite to the effect resulting with magnetic core inductors, instead of concentrating the magnetic flux within the center of the inductor to thereby augment the effective inductance as with a magnetic core, the increased permeance of the surrounding medium 14 due to the magnetic material tends to distribute the flux throughout the medium away from the inductor thereby attenuating the effective inductance
FIG 4 illustrates the resulting preferred characteristic signal shape of a given data signal when a ferrite material is introduced into the encapsulating medium The lossy inductor LF as shown in FIG 3 would serve to attenuate only the highest frequency signal components while introducing generally little true inductance effects of overshoot and ringing associated with the series inductance of the leads 16 when no femte is present The Q of the inherent series inductance of the conductor leads 16 is thereby minimized rather than maximized Thus, the intentionally introduced inductor loss reduces the undesired effects of the inherent series inductance such as overshoot and ringing
FIG. 5 illustrates a two conductor mutual coupling model of the present invention Introduction of mutual coupling and signal crosstalk between two adjacent lead conductors 16A and 16B would be an undesirable effect that is preferably minimized Current flowing into conductor 16A introduces magnetic flux 32 through adjacent conductor 16B thereby inducing a current therein In a preferred embodiment of the present invention a relatively small amount of femte mateπal is blended in the encapsulating plastic 14 resulting in a relative permeability of the surrounding material 14 that is not too high to cause significant mutual coupling but yet sufficient to desirably affect the series inductance of the lead conductors 16. In a preferred embodiment of the present invention, the relative permittivity of the encapsulating medium 14 ranges from 5 to 10.
Regarding the two conductor mutual coupling example as shown in FIG. 3, the actual amount of mutual inductance MF between two adjacent lead conductors 16A and 16B is small with respect to the self-inductance LF of each conductor 16. In a preferred embodiment of the present invention, the reduction of crosstalk on any particular conductor 16 may be further achieved by placing that particular lead conductor 16 adjacent to a Vcc or VGND lead to avoid any coupling to another data signal path.
FIG. 6 illustrates a preferred embodiment of the present invention in which mutual coupling between adjacent leads is eliminated The virtual elimination of the mutual inductance may be achieved by molding the device package 10 in two steps. The first step preferably comprises constructing the lead frame 16 and then forming or molding individual ferπte "microbeads" 30 on each lead 16. The microbeads 30 are preferably offset so they do not interfere with adjacent microbeads 30. The microbead s • v> ' electrically isolated from the adjacent conductors 16.
In a preferred embodiment of the present invention the microbeads 30 are made of pure ferrite mateπal which may be constructed using known ceramic techniques, and the microbeads 30 would be formed as an integral part of the lead frame 16. The microbeads 30 are utilized in a manner analogous to the utilization of ferrite bead chokes in radio-frequency transmission lines and antennas. The bead surrounds the transmission line and effectively chokes undesired high frequency signals immediately external to the transmission line that are the source of electromagnetic interference without affecting data signals passing therethrough. The second step preferably comprises ordinary plastic encapsulation of the frame 16 and the integrated circuit 12 upon completion of the bonding and wiring of the IC 12 to the lead frame 16. In an alternative embodiment of the present invention the inclusion of a ferrite microbead 30 on any given lead 16 is optional depending upon the type of signal transmitted thereon. For example, Vcc and VGND signals perform better if there is no ferrite bead 30 on those leads. In a preferred embodiment, the standard lead frame 16 is constructed with a microbead 30 on each lead 16. Microbeads 16 may be selectively removed by crushing away the undesired beads 30 which is facilitated by the inherent brittleness of ferrite. Preferably, a simple press may be utilized having small crushing pins arranged above the corresponding microbeads to be crushed in which all undesired microbeads 30 may be removed in a single step.
FIG. 7 illustrates a preferred embodiment of the present invention in which the magnetic flux is contained within the ferrite beads. The ferrite bead 30 surrounding conductor lead 16A completely contains the magnetic flux 32 generated by the current flowing into conductor lead 16A. Thus, no current is induced in conductor lead 16B from the magnetic flux 32 created by the current flowing through conductor lead 16A. In a preferred embodiment of the present invention, only the microbeads 30 contain ferrite wherein the encapsulating medium 14 entirely comprises non-magnetic plastic. Alternatively, a small amount of ferrite may be blended in with the encapsulating plastic 14 in conjunction with the utilization of ferrite beads to further achieve the reduction of electromagnetic interference.
FIG. 8 illustrates the preferred placement of the ferrite beads of the present invention relative to the integrated circuit wafer in the device package. The most effective physical location for the microbeads 30 is as near to the integrated circuit 12 as possible. With the required close spacing of the lead frame conductors 16 near the IC nor. ; 'iy pads 20, the physical size of a microbead 30 may not be very laiyu w, ... yer the effects of the reduced size are offset by the fact that the placement of the ferrite microbead 30 near the IC 12 is nearly ideal.
FIG. 9 illustrates the resulting electrical circuit model of a given conductor path in an integrated circuit device package of the present invention. An output signal Vouτ from the integrated circuit 12 feeds into an output buffer 24 which is externally connected through an IC bonding wire pad 20. The bonding wire 20 exhibits a small series inductance L8 wh rn is small relative to the inductance LF of the ferrite microbead 30. The i frame conductor 16 exhibits a characteristic lumped series inducta1; :• ._ouτ and shunt capacitance Couτ, the effects of which are negligible compared to the inductance LF of the microbead 30, and extends through the encapsulating medium 14. The effects of inductance Louτ and capacitance Couτ may be further reduced by the blending of ferrite with the encapsulation material 14. The lead frame conductor 16 connects to an external pin 18 on the exterior of the device package 10.
In view of the above detailed description of a preferred embodiment and modifications thereof, various other modifications will now become apparent to those skilled in the art. The contemplation of the invention below encompasses the disclosed embodiments and all reasonable modifications and variations without departing from the spirit and scope of the invention.

Claims

Claims
1 An integrated circuit comprising
a wafer having circuitry disposed thereon,
a plurality of conductors coupled to the wafer,
a structure that encapsulates and supports the wafer, and
magnetic material disposed to alter an inductance associated with at least one
of the plurality of conductors
2 The integrated circuit of claim 1 , wherein the magnetic material is at least
partially disposed within the structure
3 The integrated circuit of claim 1 , wherein the magnetic material is substantially
homogeneously disposed throughout the structure
4 The integrated circuit of claim 1 , wherein at least a portion of the magnetic
material is disposed external to the structure
5 The integrated circuit of claim 1 , wherein the magnetic mateπal comprises a
ferromagnetic material
6 The integrated circuit of claim 1 , wherein the magnetic mateπal comprises a
ferrite material
7. The integrated circuit of claim 1 , further comprising at least one choke structure formed of the magnetic material, wherein each chock structure associates with at
least one respective conductor of the plurality of conductors.
8. The integrated circuit of claim 1 , wherein the magnetic material forms a plurality of choke structures, each of the choke structures being associated with at least
one respective conductor of the plurality of conductors
9. The integrated circuit of claim 7, wherein the structure comprises a dielectric material encapsulating at least a portion of the choke structures.
10. The integrated circuit of claim 7, wherein at least some of the choke structures are disposed external to the structure.
PCT/US1996/017916 1995-11-15 1996-11-15 Reduction of electromagnetic interference in integrated circuit device packages WO1997018586A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/684,072 US7125743B2 (en) 1995-11-15 2003-10-13 Method for reduction of electromagnetic interference in integrated circuit packages
US11/551,712 US20070096273A1 (en) 1995-11-15 2006-10-21 Reduction of Electromagnetic Interference in Integrated Circuit Device Packages

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US675595P 1995-11-15 1995-11-15
US60/006,755 1995-11-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US09068685 A-371-Of-International 1998-05-13
US10/040,256 Division US20020190389A1 (en) 1995-11-15 2001-12-31 Reduction of electromagnetic interference in integrated circuit device packages

Publications (1)

Publication Number Publication Date
WO1997018586A1 true WO1997018586A1 (en) 1997-05-22

Family

ID=21722417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/017916 WO1997018586A1 (en) 1995-11-15 1996-11-15 Reduction of electromagnetic interference in integrated circuit device packages

Country Status (1)

Country Link
WO (1) WO1997018586A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0844697A2 (en) * 1996-11-22 1998-05-27 Sony Corporation Connecting cables, communication devices and communication methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529755A (en) * 1982-10-23 1985-07-16 Denki Kagaku Kogyo Kabushiki Kaisha Epoxy resin composition for encapsulating semiconductor
US4972241A (en) * 1987-08-28 1990-11-20 Kabushiki Kaisha Toshiba Magnetic force detecting semiconductor device and method for manufacturing the same
US5138431A (en) * 1990-01-31 1992-08-11 Vlsi Technology, Inc. Lead and socket structures with reduced self-inductance
US5469334A (en) * 1991-09-09 1995-11-21 Power Integrations, Inc. Plastic quad-packaged switched-mode integrated circuit with integrated transformer windings and mouldings for transformer core pieces

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529755A (en) * 1982-10-23 1985-07-16 Denki Kagaku Kogyo Kabushiki Kaisha Epoxy resin composition for encapsulating semiconductor
US4972241A (en) * 1987-08-28 1990-11-20 Kabushiki Kaisha Toshiba Magnetic force detecting semiconductor device and method for manufacturing the same
US5138431A (en) * 1990-01-31 1992-08-11 Vlsi Technology, Inc. Lead and socket structures with reduced self-inductance
US5469334A (en) * 1991-09-09 1995-11-21 Power Integrations, Inc. Plastic quad-packaged switched-mode integrated circuit with integrated transformer windings and mouldings for transformer core pieces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0844697A2 (en) * 1996-11-22 1998-05-27 Sony Corporation Connecting cables, communication devices and communication methods
EP0844697A3 (en) * 1996-11-22 1999-04-14 Sony Corporation Connecting cables, communication devices and communication methods
US6252163B1 (en) 1996-11-22 2001-06-26 Sony Corporation Connecting cable, communications device and communication method

Similar Documents

Publication Publication Date Title
JP3426023B2 (en) Package for integrated circuit and method for attenuating electromagnetic radiation
CA1249379A (en) Integrated circuit device having stacked conductive layers connecting circuit elements therethrough
EP0766503B1 (en) Multi-layered printed circuit board, and grid array package adopting the same
US7042303B2 (en) Energy conditioning circuit assembly
JP3530920B2 (en) Multilayer package, packaging method, and multilayer packaged semiconductor device
WO2005117255A1 (en) Filter circuit, logic ic, multi-chip module, filter-equipped connector, transmitting apparatus and transmitting system
US6885258B2 (en) Method and apparatus for reducing radiant noise energy by radiating noise energy from a quasi-ground into a signal wire
US20070096273A1 (en) Reduction of Electromagnetic Interference in Integrated Circuit Device Packages
EP3745591A1 (en) Broadband filter
EP1577947A1 (en) Semiconductor device comprising an encapsulating material that attenuates electromagnetic interference
WO2005065336A2 (en) High-frequency chip packages
CN108352329A (en) Method and apparatus for mitigating the parasitic couplings in encapsulation integrated circuit
US20050046046A1 (en) Semiconductor package structure and method for manufacturing the same
WO1997018586A1 (en) Reduction of electromagnetic interference in integrated circuit device packages
US11689170B2 (en) Transient noise reduction filtering system
JP2007005477A (en) Noise removal method by underfill
CN113972921A (en) Isolation device and method for transmitting signal across isolation material using wire bonding
WO2020225718A1 (en) Broadband filter
JP2759395B2 (en) Semiconductor device
US6646343B1 (en) Matched impedance bonding technique in high-speed integrated circuits
US11990422B2 (en) Ferrite electro-magnetic interference (EMI) shield between an integrated-circuit (IC) chip and an air-core inductor all inside a hybrid lead-frame package
JPH0595055A (en) Semiconductor integrated circuit
KR100327926B1 (en) Integrated Circuit Packaging
JPH04162557A (en) Lsi package
JP2867710B2 (en) Plastic pin grid array

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CA US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA