KR880701973A - 집적회로 마스터슬라이스 - Google Patents
집적회로 마스터슬라이스Info
- Publication number
- KR880701973A KR880701973A KR1019880700489A KR880700489A KR880701973A KR 880701973 A KR880701973 A KR 880701973A KR 1019880700489 A KR1019880700489 A KR 1019880700489A KR 880700489 A KR880700489 A KR 880700489A KR 880701973 A KR880701973 A KR 880701973A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- master slice
- circuit master
- slice
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90499886A | 1986-09-08 | 1986-09-08 | |
| US904,998 | 1986-09-08 | ||
| PCT/US1987/001707 WO1988002185A1 (en) | 1986-09-08 | 1987-07-20 | Integrated circuit masterslice |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880701973A true KR880701973A (ko) | 1988-11-07 |
| KR910008989B1 KR910008989B1 (ko) | 1991-10-26 |
Family
ID=25420131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880700489A KR910008989B1 (ko) | 1986-09-08 | 1987-07-20 | 집적회로 마스터슬라이스 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0281590B1 (ko) |
| JP (1) | JPH0642538B2 (ko) |
| KR (1) | KR910008989B1 (ko) |
| DE (1) | DE3780297T2 (ko) |
| WO (1) | WO1988002185A1 (ko) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056292B2 (ja) * | 1981-04-23 | 1985-12-09 | 三菱電機株式会社 | 相補形ｍｏｓ集積回路装置 |
| US4513307A (en) * | 1982-05-05 | 1985-04-23 | Rockwell International Corporation | CMOS/SOS transistor gate array apparatus |
| JPS6021542A (ja) * | 1983-07-15 | 1985-02-02 | Toshiba Corp | 半導体集積回路装置 |
-
1987
- 1987-07-20 EP EP87905678A patent/EP0281590B1/en not_active Expired - Lifetime
- 1987-07-20 WO PCT/US1987/001707 patent/WO1988002185A1/en active IP Right Grant
- 1987-07-20 JP JP62505216A patent/JPH0642538B2/ja not_active Expired - Lifetime
- 1987-07-20 KR KR1019880700489A patent/KR910008989B1/ko not_active IP Right Cessation
- 1987-07-20 DE DE8787905678T patent/DE3780297T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3780297T2 (de) | 1993-02-25 |
| EP0281590A1 (en) | 1988-09-14 |
| KR910008989B1 (ko) | 1991-10-26 |
| JPH01500709A (ja) | 1989-03-09 |
| WO1988002185A1 (en) | 1988-03-24 |
| JPH0642538B2 (ja) | 1994-06-01 |
| DE3780297D1 (de) | 1992-08-13 |
| EP0281590B1 (en) | 1992-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 19941011 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |