DE3780297D1 - Integrierte schaltung in hauptscheibentechnik. - Google Patents

Integrierte schaltung in hauptscheibentechnik.

Info

Publication number
DE3780297D1
DE3780297D1 DE8787905678T DE3780297T DE3780297D1 DE 3780297 D1 DE3780297 D1 DE 3780297D1 DE 8787905678 T DE8787905678 T DE 8787905678T DE 3780297 T DE3780297 T DE 3780297T DE 3780297 D1 DE3780297 D1 DE 3780297D1
Authority
DE
Germany
Prior art keywords
integrated circuit
main disc
disc technology
technology
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787905678T
Other languages
English (en)
Other versions
DE3780297T2 (de
Inventor
C Henderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3780297D1 publication Critical patent/DE3780297D1/de
Publication of DE3780297T2 publication Critical patent/DE3780297T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8787905678T 1986-09-08 1987-07-20 Integrierte schaltung in hauptscheibentechnik. Expired - Fee Related DE3780297T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90499886A 1986-09-08 1986-09-08
PCT/US1987/001707 WO1988002185A1 (en) 1986-09-08 1987-07-20 Integrated circuit masterslice

Publications (2)

Publication Number Publication Date
DE3780297D1 true DE3780297D1 (de) 1992-08-13
DE3780297T2 DE3780297T2 (de) 1993-02-25

Family

ID=25420131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787905678T Expired - Fee Related DE3780297T2 (de) 1986-09-08 1987-07-20 Integrierte schaltung in hauptscheibentechnik.

Country Status (5)

Country Link
EP (1) EP0281590B1 (de)
JP (1) JPH0642538B2 (de)
KR (1) KR910008989B1 (de)
DE (1) DE3780297T2 (de)
WO (1) WO1988002185A1 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056292B2 (ja) * 1981-04-23 1985-12-09 三菱電機株式会社 相補形ｍｏｓ集積回路装置
US4513307A (en) * 1982-05-05 1985-04-23 Rockwell International Corporation CMOS/SOS transistor gate array apparatus
JPS6021542A (ja) * 1983-07-15 1985-02-02 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0642538B2 (ja) 1994-06-01
JPH01500709A (ja) 1989-03-09
WO1988002185A1 (en) 1988-03-24
KR880701973A (ko) 1988-11-07
KR910008989B1 (ko) 1991-10-26
DE3780297T2 (de) 1993-02-25
EP0281590B1 (de) 1992-07-08
EP0281590A1 (de) 1988-09-14

Similar Documents

Publication Publication Date Title
DE3750770D1 (de) Integrierte Schaltung in Hauptscheibentechnik.
DE3585756D1 (de) Halbleiterschaltungsanordnung in hauptscheibentechnik.
DE3769564D1 (de) Logische schaltung.
DE3587715D1 (de) Integrierte Schaltung.
DE58906492D1 (de) Halbleiterschaltung.
NO891828L (no) Integrert kretskort.
NL191912C (nl) Geïntegreerd circuit.
DE3751376D1 (de) Schaltungselement.
DE3853814D1 (de) Integrierte Halbleiterschaltung.
DE3779784D1 (de) Logische schaltung.
DE3766422D1 (de) Integrierte hybridschaltung.
DE3782775D1 (de) Integrierte halbleiterschaltung.
DE68916093D1 (de) Integrierte Schaltung.
DE3785833D1 (de) Logikschaltung.
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
DE3775781D1 (de) Plattenspieler.
DE3783507D1 (de) Zusammengesetztes halbleiterbauelement.
DE3784957D1 (de) Plattenspieler.
DE3482084D1 (de) Integrierte schaltung.
FI880876A0 (fi) Foerbaettringar i anordningar foer att injektera aemnen in i vaetskor.
FI881031A0 (fi) Foerbaettringar till munstycken foer injektion av aemnen in i vaetskor.
DE3884460D1 (de) Intergrierte halbleiterschaltung.
DE68920785D1 (de) Logische Schaltung.
DE3884713D1 (de) Logische Schaltung.
DE3787037D1 (de) Halteschaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee