DE3675827D1 - Dreidimensionaler integrierter schaltkreis. - Google Patents

Dreidimensionaler integrierter schaltkreis.

Info

Publication number
DE3675827D1
DE3675827D1 DE8686109293T DE3675827T DE3675827D1 DE 3675827 D1 DE3675827 D1 DE 3675827D1 DE 8686109293 T DE8686109293 T DE 8686109293T DE 3675827 T DE3675827 T DE 3675827T DE 3675827 D1 DE3675827 D1 DE 3675827D1
Authority
DE
Germany
Prior art keywords
integrated circuit
dimensional integrated
dimensional
circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686109293T
Other languages
English (en)
Inventor
Kazuhiko Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3675827D1 publication Critical patent/DE3675827D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8686109293T 1985-07-11 1986-07-08 Dreidimensionaler integrierter schaltkreis. Expired - Fee Related DE3675827D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60152902A JPS6213063A (ja) 1985-07-11 1985-07-11 化合物半導体多層集積回路

Publications (1)

Publication Number Publication Date
DE3675827D1 true DE3675827D1 (de) 1991-01-10

Family

ID=15550630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109293T Expired - Fee Related DE3675827D1 (de) 1985-07-11 1986-07-08 Dreidimensionaler integrierter schaltkreis.

Country Status (4)

Country Link
US (1) US4779127A (de)
EP (1) EP0208294B1 (de)
JP (1) JPS6213063A (de)
DE (1) DE3675827D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611305B1 (fr) * 1987-02-20 1990-04-27 Labo Electronique Physique Circuit comportant des lignes conductrices pour le transfert de signaux rapides
JPS63237581A (ja) * 1987-03-26 1988-10-04 Nec Corp 化合物半導体３次元集積回路
US5140399A (en) * 1987-04-30 1992-08-18 Sony Corporation Heterojunction bipolar transistor and the manufacturing method thereof
DE3743776C2 (de) * 1987-12-23 1995-08-10 Licentia Gmbh Verfahren zur Herstellung vergrabener Halbleiterbauelemente
US6281555B1 (en) * 1998-11-06 2001-08-28 Advanced Micro Devices, Inc. Integrated circuit having isolation structures
US6455903B1 (en) 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
JP2002231721A (ja) * 2001-02-06 2002-08-16 Mitsubishi Electric Corp 半導体装置
US6835974B2 (en) * 2002-03-14 2004-12-28 Jeng-Jye Shau Three dimensional integrated circuits using sub-micron thin-film diodes
US10657853B2 (en) * 2016-10-31 2020-05-19 E Ink Holdings Inc. Identifiable element, display device, method of manufacturing the same, and method of forming a display pattern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2832012A1 (de) * 1978-07-20 1980-01-31 Siemens Ag Verfahren zum herstellen einer dreidimensionalen integrierten schaltung
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
JPS5789260A (en) * 1980-11-26 1982-06-03 Nippon Telegr & Teleph Corp <Ntt> Semiconductor logic circuit
JPS5868963A (ja) * 1981-10-19 1983-04-25 Fujitsu Ltd 半導体装置
US4490632A (en) * 1981-11-23 1984-12-25 Texas Instruments Incorporated Noninverting amplifier circuit for one propagation delay complex logic gates
JPS5963753A (ja) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol 積層化合物半導体集積回路
JPS61204961A (ja) * 1985-03-04 1986-09-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体回路装置

Also Published As

Publication number Publication date
JPS6213063A (ja) 1987-01-21
EP0208294A1 (de) 1987-01-14
JPH0558580B2 (de) 1993-08-26
EP0208294B1 (de) 1990-11-28
US4779127A (en) 1988-10-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee