KR870011650A - 함침형음극 - Google Patents

함침형음극 Download PDF

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Publication number
KR870011650A
KR870011650A KR870005242A KR870005242A KR870011650A KR 870011650 A KR870011650 A KR 870011650A KR 870005242 A KR870005242 A KR 870005242A KR 870005242 A KR870005242 A KR 870005242A KR 870011650 A KR870011650 A KR 870011650A
Authority
KR
South Korea
Prior art keywords
thin film
oxide
film layer
tungsten
scandium
Prior art date
Application number
KR870005242A
Other languages
English (en)
Other versions
KR900009071B1 (ko
Inventor
시게히꼬 야마모또
이사또 와타나베
사다노리 타구찌
스스므 사사키
Original Assignee
미다 가쯔시게
가부시기 가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12100586A external-priority patent/JPH0756776B2/ja
Priority claimed from JP23456986A external-priority patent/JP2585232B2/ja
Application filed by 미다 가쯔시게, 가부시기 가이샤 히다찌세이사구쇼 filed Critical 미다 가쯔시게
Publication of KR870011650A publication Critical patent/KR870011650A/ko
Application granted granted Critical
Publication of KR900009071B1 publication Critical patent/KR900009071B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/28—Dispenser-type cathodes, e.g. L-cathode

Landscapes

  • Solid Thermionic Cathode (AREA)

Abstract

내용 없음

Description

함침형음극
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 함침형음극의 일실시예를 모식적으로 도시한 평면도.
제 2 도, 제 3 도는 본 발명을 설명하기 위한 도면.

Claims (11)

  1. 내열다공 질체의 세공부에 바륨을 함유하는 전자방출 물질을 함침시킨 기체와 그 표면에 스칸듐및 스칸듐의 산화물로 이루어진 군으로부터 선택된 적어도 1종의 텅스텐으로 이루어지는 박막층을 가진 함침형 음극에 있어서,
    상기 박막층은 텅스텐의 산화물 및 텅스텐과 스칸듐을 함유한 산화물로 이루어진 군으로부터 선택된 적어도 1종의 산화물을 함유하는 것을 특징으로 하는 함침형음극.
  2. 제 1 항에 있어서,
    상기 산화물은, 스칸듐 및 스칸듐의 산화물로 이루어진 군으로부터 선택된 적어도 1종의 텅스텐으로 이루어진 박막층속의 텅스텐을 산화 처리해서 얻은 산화물인 함침형음극.
  3. 제 2 항에 있어서,
    상기 박막층의 두께는 10nm~10㎛인 것을 특징으로 하는 함침형음극.
  4. 제 1 항에 있어서,
    상기 박막층은 텅스텐과 스칸듐을 함유하는 산화물을 함유하는 것을 특징으로 하는 함침형음극.
  5. 제 4 항에 있어서,
    상기 텅스텐과 스칸듐을 함유하는 산화물은, Sc2W3O12, Sc6WO12의 적어도 1종을 함유한 산화물인 것을 특징으로 하는 함침형음극.
  6. 제 4 항에 있어서,
    상기 박막층의 두께는 10nm~10㎛인 것을 특징으로 하는 함침형음극.
  7. 제 4 항에 있어서,
    상기 텅스텐과 스칸듐을 함유하는 산화물은, 박막층 중량의 2%이상, 50%이하인 것을 특징으로 하는 함침형음극.
  8. 제 1 항에 있어서,
    상기 박막층은 산화텅스텐을 함유하는 것을 특징으로 하는 함침형음극.
  9. 제 8 항에 있어서,
    상기 산화텅스텐은 2산화 텅스텐인 함침형음극.
  10. 제 8 항에 있어서,
    상기 박막층의 두께는 50~1000nm인 것을 특징으로 하는 함침형음극.
  11. 제 9 항에 있어서,
    상기 박막층의 산화스칸듐량은, 박막층 중량의 2~30%이고, 또한 2산화 텅스텐과의 합계가, 박막층 중량의 50% 이하로 한 것을 특징으로 하는 함침형음극.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870005242A 1986-05-28 1987-05-27 함침형 음극 KR900009071B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP121005 1986-05-28
JP61-121005 1986-05-28
JP12100586A JPH0756776B2 (ja) 1986-05-28 1986-05-28 含浸形カソ−ド
JP234569 1986-10-03
JP23456986A JP2585232B2 (ja) 1986-10-03 1986-10-03 含浸形陰極
JP61-234569 1986-10-03

Publications (2)

Publication Number Publication Date
KR870011650A true KR870011650A (ko) 1987-12-24
KR900009071B1 KR900009071B1 (ko) 1990-12-20

Family

ID=26458479

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005242A KR900009071B1 (ko) 1986-05-28 1987-05-27 함침형 음극

Country Status (2)

Country Link
US (1) US4783613A (ko)
KR (1) KR900009071B1 (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8702727A (nl) * 1987-11-16 1989-06-16 Philips Nv Scandaatkathode.
US4894257A (en) * 1988-07-05 1990-01-16 The United States Of America As Represented By The Secretary Of America Method of overcoating a high current density cathode with rhodium
US5077771A (en) * 1989-03-01 1991-12-31 Kevex X-Ray Inc. Hand held high power pulsed precision x-ray source
NL8900765A (nl) * 1989-03-29 1990-10-16 Philips Nv Scandaatkathode.
KR920001333B1 (ko) * 1989-11-09 1992-02-10 삼성전관 주식회사 디스펜서 음극
KR920001334B1 (ko) * 1989-11-09 1992-02-10 삼성전관 주식회사 디스펜서 음극
NL8902793A (nl) * 1989-11-13 1991-06-03 Philips Nv Scandaatkathode.
US5041757A (en) * 1990-12-21 1991-08-20 Hughes Aircraft Company Sputtered scandate coatings for dispenser cathodes and methods for making same
FR2672425A1 (fr) * 1991-02-06 1992-08-07 Samsung Electronic Devices Cathode de reserve pour tube electronique.
FR2673036A1 (fr) * 1991-02-15 1992-08-21 Samsung Electronic Devices Cathode de reserve pour tube electronique.
FR2680799B1 (fr) * 1991-09-03 1993-10-29 Elf Aquitaine Ste Nale Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element.
DE4142535A1 (de) * 1991-12-21 1993-06-24 Philips Patentverwaltung Scandat-kathode und verfahren zur ihrer herstellung
US5298830A (en) * 1992-04-03 1994-03-29 The United States Of America As Represented By The Secretary Of The Army Method of preparing an impregnated cathode with an enhanced thermionic emission from a porous billet and cathode so prepared
US5828164A (en) * 1992-04-03 1998-10-27 The United States Of America As Represented By The Secretary Of The Army Thermionic cathode using oxygen deficient and fully oxidized material for high electron density emissions
KR950012511A (ko) * 1993-10-05 1995-05-16 이헌조 음극선관용 함침형 음극
US5847498A (en) * 1994-12-23 1998-12-08 Philips Electronics North America Corporation Multiple layer composite electrodes for discharge lamps
US5545945A (en) * 1995-03-29 1996-08-13 The United States Of America As Represented By The Secretary Of The Army Thermionic cathode
US6034469A (en) * 1995-06-09 2000-03-07 Kabushiki Kaisha Toshiba Impregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assembly
FR2821205A1 (fr) * 2001-02-19 2002-08-23 Thomson Tubes & Displays Canon a electrons a emission parasite reduite
US20020169880A1 (en) * 2001-04-19 2002-11-14 Koninklijke Philips Electronics N.V. Method and device for robust real-time estimation of the bottleneck bandwidth in the internet
CN101073134A (zh) * 2004-12-09 2007-11-14 皇家飞利浦电子股份有限公司 电子发射阴极
JP5423240B2 (ja) * 2009-08-24 2014-02-19 パナソニック株式会社 閃光放電管用電極及び閃光放電管
EP2739762A1 (en) * 2011-08-03 2014-06-11 Koninklijke Philips N.V. Target for barium - scandate dispenser cathode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000169A1 (de) * 1980-01-04 1982-08-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer vorratskathode
JPS58154131A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 含浸形陰極
NL8201371A (nl) * 1982-04-01 1983-11-01 Philips Nv Werkwijzen voor het vervaardigen van een naleveringskathode en naleveringskathode vervaardigd volgens deze werkwijzen.
NL8403032A (nl) * 1984-10-05 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een scandaatnaleveringskathode, naleveringskathode vervaardigd met deze werkwijze.

Also Published As

Publication number Publication date
US4783613A (en) 1988-11-08
KR900009071B1 (ko) 1990-12-20

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