KR870003472A - 양극처리된 메모리 디스크 기판 및 그 제조방법 - Google Patents

양극처리된 메모리 디스크 기판 및 그 제조방법 Download PDF

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Publication number
KR870003472A
KR870003472A KR1019860007405A KR860007405A KR870003472A KR 870003472 A KR870003472 A KR 870003472A KR 1019860007405 A KR1019860007405 A KR 1019860007405A KR 860007405 A KR860007405 A KR 860007405A KR 870003472 A KR870003472 A KR 870003472A
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KR
South Korea
Prior art keywords
thickness
anodized
anode film
substrate
aluminum
Prior art date
Application number
KR1019860007405A
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English (en)
Other versions
KR950007135B1 (ko
Inventor
미쯔야 미야모또
야스유끼 오오세끼
모또히로 나바에
Original Assignee
구사까베 에쯔지
후루까와 알루미늄 고교 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 구사까베 에쯔지, 후루까와 알루미늄 고교 가부시끼 가이샤 filed Critical 구사까베 에쯔지
Publication of KR870003472A publication Critical patent/KR870003472A/ko
Application granted granted Critical
Publication of KR950007135B1 publication Critical patent/KR950007135B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/739—Magnetic recording media substrates
    • G11B5/73911—Inorganic substrates
    • G11B5/73917—Metallic substrates, i.e. elemental metal or metal alloy substrates
    • G11B5/73919—Aluminium or titanium elemental or alloy substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

내용 없음

Description

양극처리된 메모리 디스크 기판 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 내열성과 경도가 우수하고 두께는 3㎛이상인 양극막이 크롬산-황산 혼합액에 의해 알루미늄 또는 알루미늄 합금 기판의 표면에 형성된 것을 특징으로 하는 양극처리된 메모리 디스크 기판.
  2. 알루미늄 또는 알루미늄 합금 기판을 크롬산 10 내지 200g/ℓ, 황산 0.1 내지 50g/ℓ 로 이루어지는 혼합 산용액에서 온도 30 내지 90℃, 전압 25 내지 90V로 양극처리를 행하여 기판의 표면에 두께 4㎛이상의 양극막을 형성한 다음, 양극막의 두께를 적어도 3㎛가 되도록 하면서 폴리싱하는 것을 특징으로 하는 양극처리된 메모리 디스크 기판의 제조방법.
  3. 알루미늄 또는 알루미늄 합금 기판을 크롬산 10 내지 200g/ℓ, 황산 0.1 내지 50g/ℓ 로 이루어지는 혼합 산용액에서 온도 30 내지 90℃, 전압 25 내지 90V로 양극처리를 행하여 기판의 표면에 두께 4㎛이상의 양극막을 형성한 다음, 양극막의 두께를 적어도 3㎛가 되도록 하면서 폴리싱하는데, 폴리싱 전 또는 후에 10분 이상 150 내지 450℃의 온도로 가열하는 것을 특징으로 하는 양극처리된 메모리 디스크 기판의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860007405A 1985-09-04 1986-09-04 양극처리된 메모리 디스크 기판 및 그 제조방법 KR950007135B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-193953 1985-09-04
JP19395385 1985-09-04

Publications (2)

Publication Number Publication Date
KR870003472A true KR870003472A (ko) 1987-04-17
KR950007135B1 KR950007135B1 (ko) 1995-06-30

Family

ID=16316502

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007405A KR950007135B1 (ko) 1985-09-04 1986-09-04 양극처리된 메모리 디스크 기판 및 그 제조방법

Country Status (5)

Country Link
US (1) US4678547A (ko)
EP (1) EP0216543B1 (ko)
JP (1) JPS62149029A (ko)
KR (1) KR950007135B1 (ko)
DE (1) DE3678235D1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506123B2 (ja) * 1987-09-29 1996-06-12 シャープ株式会社 光ディスク
EP0519018A1 (en) * 1990-02-20 1992-12-23 Technology Developments Company Membrane memory system
JPH04280922A (ja) * 1991-03-06 1992-10-06 Furukawa Electric Co Ltd:The ディスク歪取焼鈍用アルマイトスペーサー
WO1993003207A1 (en) * 1991-07-30 1993-02-18 Minsky Radiotekhnichesky Institut Method for making metal sublayer based on aluminium or its alloys
US7179551B2 (en) 1999-02-12 2007-02-20 General Electric Company Poly(arylene ether) data storage media
WO2000048172A2 (en) 1999-02-12 2000-08-17 General Electric Company Data storage media
JP2008202112A (ja) * 2007-02-21 2008-09-04 Fujifilm Corp 微細構造体および製造方法
FR2922899B1 (fr) * 2007-10-26 2010-11-26 Univ Toulouse Procede de fabrication d'une structure poreuse ordonnee a partir d'un substrat d'aluminium
CN102312260A (zh) * 2011-08-22 2012-01-11 吴江市精工铝字制造厂 铜铝合金的混合酸硬质阳极氧化交直流叠加法
JP6170029B2 (ja) * 2014-11-07 2017-07-26 トヨタ自動車株式会社 遮熱膜の形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE414610A (ko) * 1935-03-31
US2437620A (en) * 1943-08-31 1948-03-09 Aluminum Co Of America Method of coating masses of small copper-bearing aluminum articles
US3616310A (en) * 1969-03-10 1971-10-26 Kaiser Aluminium Chem Corp Aluminum-anodizing process
GB1464857A (en) * 1974-05-08 1977-02-16 Nat Res Dev Chromic acid anodising of aluminium and its alloys
FR2278790A1 (fr) * 1974-07-05 1976-02-13 Galvanoplastie Ind Perfectionnements aux bains chromiques d'oxydation anodique de l'aluminium allie ou non et aux procedes de preparation et d'utilisation de ces bains, notamment en vue de la revelation de la macrographie du substrat
US4256547A (en) * 1979-07-12 1981-03-17 General Dynamics Corporation Universal chromic acid anodizing method
JPS59171023A (ja) * 1983-03-18 1984-09-27 Nippon Light Metal Co Ltd 高密度磁気記録材用アルマイト基板の製造法
JPS59180832A (ja) * 1983-03-31 1984-10-15 Nippon Light Metal Co Ltd 磁気記録材用アルマイト基板

Also Published As

Publication number Publication date
EP0216543B1 (en) 1991-03-20
DE3678235D1 (de) 1991-04-25
US4678547A (en) 1987-07-07
KR950007135B1 (ko) 1995-06-30
EP0216543A1 (en) 1987-04-01
JPS62149029A (ja) 1987-07-03

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