KR870000152B1 - 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 - Google Patents

고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 Download PDF

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Publication number
KR870000152B1
KR870000152B1 KR1019830005520A KR830005520A KR870000152B1 KR 870000152 B1 KR870000152 B1 KR 870000152B1 KR 1019830005520 A KR1019830005520 A KR 1019830005520A KR 830005520 A KR830005520 A KR 830005520A KR 870000152 B1 KR870000152 B1 KR 870000152B1
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KR
South Korea
Prior art keywords
region
emitter
gate
thyristor
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830005520A
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English (en)
Korean (ko)
Other versions
KR840006874A (ko
Inventor
필립 레뛰르끄
Original Assignee
라 텔레메카니끄 엘렉트리끄
쟝-뽈 프랑시롱
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 라 텔레메카니끄 엘렉트리끄, 쟝-뽈 프랑시롱 filed Critical 라 텔레메카니끄 엘렉트리끄
Publication of KR840006874A publication Critical patent/KR840006874A/ko
Application granted granted Critical
Publication of KR870000152B1 publication Critical patent/KR870000152B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

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  • Thyristors (AREA)
KR1019830005520A 1982-11-25 1983-11-23 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치 Expired KR870000152B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR8219728 1982-11-25
JP19728 1982-11-25
FR8219728A FR2536909A1 (fr) 1982-11-25 1982-11-25 Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel

Publications (2)

Publication Number Publication Date
KR840006874A KR840006874A (ko) 1984-12-03
KR870000152B1 true KR870000152B1 (ko) 1987-02-12

Family

ID=9279493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830005520A Expired KR870000152B1 (ko) 1982-11-25 1983-11-23 고유스위치 온 특성을 가진 다이리스터 및 그를 응용한 양방향성장치

Country Status (9)

Country Link
EP (1) EP0110777A1 (https=)
JP (1) JPS59108353A (https=)
KR (1) KR870000152B1 (https=)
BR (1) BR8306509A (https=)
DK (1) DK541383A (https=)
ES (1) ES8501923A1 (https=)
FR (1) FR2536909A1 (https=)
IN (1) IN159925B (https=)
ZA (1) ZA838817B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2566963B1 (fr) * 1984-06-29 1987-03-06 Silicium Semiconducteur Ssc Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch
FR2579007B1 (fr) * 1985-03-12 1988-09-09 Telemecanique Electrique Interrupteur hybride
FR2582882A1 (fr) * 1985-05-30 1986-12-05 Telemecanique Electrique Relais statique comportant des thyristors normalement conducteurs.
WO2016096956A1 (en) 2014-12-17 2016-06-23 Abb Technology Ag Bidirectional power semiconductor device
JP7432098B2 (ja) * 2020-03-31 2024-02-16 ヒタチ・エナジー・リミテッド サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss

Also Published As

Publication number Publication date
EP0110777A1 (fr) 1984-06-13
ES527571A0 (es) 1984-12-01
ZA838817B (en) 1984-07-25
IN159925B (https=) 1987-06-13
FR2536909A1 (fr) 1984-06-01
FR2536909B1 (https=) 1985-03-29
KR840006874A (ko) 1984-12-03
ES8501923A1 (es) 1984-12-01
BR8306509A (pt) 1984-07-03
DK541383A (da) 1984-05-26
JPS59108353A (ja) 1984-06-22
DK541383D0 (da) 1983-11-25

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Patent event date: 19831122

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Patent event date: 19861010

Patent event code: PE09021S01D

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Patent event date: 19861219

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Patent event date: 19870418

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