KR860001477A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR860001477A
KR860001477A KR1019850004374A KR850004374A KR860001477A KR 860001477 A KR860001477 A KR 860001477A KR 1019850004374 A KR1019850004374 A KR 1019850004374A KR 850004374 A KR850004374 A KR 850004374A KR 860001477 A KR860001477 A KR 860001477A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
wire
copper
electrode pad
Prior art date
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KR1019850004374A
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English (en)
Other versions
KR900005348B1 (ko
Inventor
오사무 우스다
Original Assignee
사바 쇼오이찌
가부시기 가이샤 도오시바
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Publication of KR860001477A publication Critical patent/KR860001477A/ko
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Publication of KR900005348B1 publication Critical patent/KR900005348B1/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/06—Wiring by machine
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K

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Abstract

내용 없음

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 1 실시예의 설명을 하기 위한 부분 확대도
제2도는 동계통 와이어(5)의 절단접합상태도
제3도는 동계통 와이어(5)의 굴곡상태도
1A…리드 프레임(lead frame)의 도상부 1B…리드부 2…반도체칩 2A…전극패드 2B…접촉막 3…히터 4…모세관 5…동계통와이어 5A…본딩 와이어 6…커버 6a…구멍 7…토우치 8…환원성개스 9…본딩기구 10…로울러

Claims (1)

  1. 반도체 칩(2)의 전극 패드(2A)와 리드부(1B)를 접속시키는 와이어를 동선이나 동합금금선 등과 같은 동계통와이어(5)를 사용하는 반도체 장치의 제조방법에 있어서, 상기 동계통 와이어(5)의 단부에 용접용보올(5a)을 형성시킨 다음 상기 보올(5a)을 200℃ 이상의 환원성개스(8)로 환원시켜 전극 패드(2A)나 외부 리드부 (1B)에 접속시키는 것을 특징으로 한 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850004374A 1984-07-27 1985-06-20 반도체장치의 제조방법 KR900005348B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15559184A JPS6135545A (ja) 1984-07-27 1984-07-27 半導体装置の製造方法
JP59-155591 1984-07-27

Publications (2)

Publication Number Publication Date
KR860001477A true KR860001477A (ko) 1986-02-26
KR900005348B1 KR900005348B1 (ko) 1990-07-27

Family

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Application Number Title Priority Date Filing Date
KR1019850004374A KR900005348B1 (ko) 1984-07-27 1985-06-20 반도체장치의 제조방법

Country Status (2)

Country Link
JP (1) JPS6135545A (ko)
KR (1) KR900005348B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129169B2 (ja) * 1995-11-08 2001-01-29 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6135545A (ja) 1986-02-20
JPH0325019B2 (ko) 1991-04-04
KR900005348B1 (ko) 1990-07-27

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