KR840006558A - X선 로광 장치( 線露光裝置) - Google Patents

X선 로광 장치( 線露光裝置) Download PDF

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Publication number
KR840006558A
KR840006558A KR1019830004846A KR830004846A KR840006558A KR 840006558 A KR840006558 A KR 840006558A KR 1019830004846 A KR1019830004846 A KR 1019830004846A KR 830004846 A KR830004846 A KR 830004846A KR 840006558 A KR840006558 A KR 840006558A
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KR
South Korea
Prior art keywords
meter
axis
backside
rotation
synchrotron radiation
Prior art date
Application number
KR1019830004846A
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English (en)
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KR920001171B1 (ko
Inventor
다게시(외 2) 기무라
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840006558A publication Critical patent/KR840006558A/ko
Application granted granted Critical
Publication of KR920001171B1 publication Critical patent/KR920001171B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Particle Accelerators (AREA)

Abstract

내용 없음

Description

X선 로광 장치( 線露光裝置)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 X선 리소그래피(lithography)의 구성을 설명하기 위한 도식도.
제3도는 전자 싱크로트론(synchrotron) 방사광(放射光)의 파장(波長) 특성을 표시한 곡선도.
제4도는 본 발명의 원리를 설명하기 위한 모식도.

Claims (4)

  1. 원하는 광경을 가진 싱크로트론 방사선속을 凸면 미러에 입사하는 수단과, 상기 凸면 미터로부터의 반사광을, 원하는 패턴을 가진 마스크를 거쳐서 감방사선성 레지스트막에 조사하는 수단을 구비하는 것에 있어서, 상기 凸면 미터를, 상기 凸면 미터의 중심축과 평행이며, 또한, 편심한 축을 회전축으로서 회전 혹은 회전 진동시키는 수단을 구비한 것을 특징으로 하는 X선.
  2. 특허 청구 범위 제1항에 있어서, 상기 凸면 미터의 단면은 원호상 또는 원형이다.
  3. 특허 청구 범위 제2항에 있어서, 상기 凸면 미터의 회전축은 상기 凸면 미터에 입사 되는 상기 싱크로트론 방사선 속의 광축과 거의 직교한다.
  4. 특허 청구 범위 제3항에 있어서, 상기 凸면 미터의 회전축은 상기 싱크로트론 방사선속 내에 위치하고 또한 해당 凸면 미터의 반사면 쪽에 있는 해당 방사선속 쪽 끝에 일치 또는 접근한다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830004846A 1982-10-15 1983-10-13 X선 노출 장치 KR920001171B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP179851 1982-10-15
JP57179851A JPS5969927A (ja) 1982-10-15 1982-10-15 Ｘ線露光装置
JP82-179851 1982-10-15

Publications (2)

Publication Number Publication Date
KR840006558A true KR840006558A (ko) 1984-11-30
KR920001171B1 KR920001171B1 (ko) 1992-02-06

Family

ID=16073018

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830004846A KR920001171B1 (ko) 1982-10-15 1983-10-13 X선 노출 장치

Country Status (6)

Country Link
US (1) US4514857A (ko)
EP (1) EP0109193B1 (ko)
JP (1) JPS5969927A (ko)
KR (1) KR920001171B1 (ko)
CA (1) CA1192673A (ko)
DE (1) DE3379915D1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155201B (en) * 1984-02-24 1988-07-13 Canon Kk An x-ray exposure apparatus
US4788698A (en) * 1984-04-15 1988-11-29 Hitachi, Ltd. X-ray exposure system
JPS62222634A (ja) * 1986-03-18 1987-09-30 Fujitsu Ltd Ｘ線露光方法
DE3639346A1 (de) * 1986-11-18 1988-05-26 Siemens Ag Verfahren und anordnung zur aenderung des abbildungsmassstabes in der roentgenlithografie
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JPH0196600A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd Ｘ線露光装置
US5365561A (en) * 1988-03-25 1994-11-15 Canon Kabushiki Kaisha Exposure control in an X-ray exposure apparatus
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
JP2731955B2 (ja) * 1989-09-07 1998-03-25 キヤノン株式会社 Ｘ線露光装置
US5285488A (en) * 1989-09-21 1994-02-08 Canon Kabushiki Kaisha Exposure apparatus
DE68921341T2 (de) * 1989-10-30 1995-08-17 Canon Kk Ausrichtevorrichtung und eine damit versehene Synchrotron-Röntgenbelichtungsvorrichtung.
US5214685A (en) * 1991-10-08 1993-05-25 Maxwell Laboratories, Inc. X-ray lithography mirror and method of making same
US5458999A (en) * 1993-06-24 1995-10-17 Szabo; Gabor Interferometric phase shifting method for high resolution microlithography
US6558878B1 (en) * 1999-07-08 2003-05-06 Korea Electronics Technology Institute Microlens manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242588A (en) * 1979-08-13 1980-12-30 American Science And Engineering, Inc. X-ray lithography system having collimating optics
DE3270459D1 (en) * 1981-12-31 1986-05-15 Ibm A method and apparatus for providing a uniform illumination of an area

Also Published As

Publication number Publication date
EP0109193A3 (en) 1986-06-11
KR920001171B1 (ko) 1992-02-06
DE3379915D1 (en) 1989-06-29
EP0109193B1 (en) 1989-05-24
CA1192673A (en) 1985-08-27
JPH0324769B2 (ko) 1991-04-04
JPS5969927A (ja) 1984-04-20
US4514857A (en) 1985-04-30
EP0109193A2 (en) 1984-05-23

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