KR840000069A - 광도전막 - Google Patents

광도전막 Download PDF

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Publication number
KR840000069A
KR840000069A KR1019820002439A KR820002439A KR840000069A KR 840000069 A KR840000069 A KR 840000069A KR 1019820002439 A KR1019820002439 A KR 1019820002439A KR 820002439 A KR820002439 A KR 820002439A KR 840000069 A KR840000069 A KR 840000069A
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KR
South Korea
Prior art keywords
added
tellurium
concentration
weight
range
Prior art date
Application number
KR1019820002439A
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English (en)
Other versions
KR860000815B1 (ko
Inventor
게이이찌 시다라 (외 6)
Original Assignee
미다 가쓰시게루 (외 1)
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미다 가쓰시게루 (외 1), 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미다 가쓰시게루 (외 1)
Publication of KR840000069A publication Critical patent/KR840000069A/ko
Application granted granted Critical
Publication of KR860000815B1 publication Critical patent/KR860000815B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Luminescent Compositions (AREA)

Abstract

내용 없음

Description

광 도 전 막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도와 제4도는 촬상관에 사용하기 위한 타게트의 원리적인 구조도. 제2도는 종래의 촬상관 타게트의 증감영역(增減領域)의 성분분포의 1예를 나타낸 도면. 제3도는 본 발명에 의한 광도전막의 제1부분의 성분분포의 1예를 나타낸 도면. 제5도는 고강도의 입사광에 의하여 생긴 잔상이 시간에 따라 변화하거나 없어지는 것을 설명하기 위한 도면이다.

Claims (7)

  1. 주로 세레륨으로 만들어진 광도전층과 층의 두께 방향으로 텔루르가 첨가된 부위로 구성 되었고, 텔루르가 첨가된 부위의 구멍 흐름 방향내의 일부와 텔루르가 첨가된 부위에 인접하여 위치한 다른 부위의 구멍흐름 방향내의 일부중 어느 하나는 세레륨내의 부공간 전하를 형성할 수 있는 산화물, 불화물 및 Ⅱ,Ⅲ과 Ⅶ족에 속하는 원소들로 부터 선택한 적어도 한 물질과 중량으로 10ppm-1%의 농도로 배합시킴을 특징으로 하는 광도전막.
  2. 제1항에 있어서, 농도가 중량으로 30ppm-5000ppm인 것을 특징으로 하는 광도전막.
  3. 제1항 또는 제2항에 있어서, Cuo,In2O3,SeO2,V2O5및 WO3로 부터 선택한 것이고, 불화물은 GaF3와 InF3의 적어도 하나를 포함하고 적어도 선택한 한 원소는 Zn,Ga,In,Cl,I 및 Br로 부터 선택한 것을 특징으로 하는 광도전막.
  4. 제1항 또는 제2항에 있어서, 텔루르가 첨가된 부위에 인접하여 위치하고, 50Å∼5000Å 범위의 두께를 가진 부위의 한 부위에 As,Bi,Ge 및 Si로 부터 선택한 적어도 한개의 원소를 중량으로 1%∼30%농도 범위로 첨가한 것을 특징으로 하는 광도전막.
  5. 제1항 또는 제2항에 있어서, 신호전류의 주부분을 만들기 위하여 투사광을 흡수하는 부위의 적어도 한 부분이 LiF,MgF2,AlF3,CrF3,MnF2,CoF2,MnF2,CoF|2,PbF2,BaF2,CeF3및 TlF로 부터 선택한 적어도 한 성분과 중량으로 50ppm∼5% 범위 농도로 배합시키는 것을 특징으로 하는 광도전막.
  6. 제3항에 있어서, 텔루르가 첨가된 부위에 인접하여 위치하고 50Å∼5000Å범위의 두께를 가진 부위에 As,Bi,Sb,Ge 및 Si로 부터 선택한 적어도 한개의 원소를 중량으로 1∼30% 농도 범위를 첨가하는 것을 특징으로 하는 광도전막.
  7. 제3항에 있어서, 신호 전류의 주부분을 참조하기 위하여 입사광을 흡수하는 부위의 적어도 일부분을 중량으로 50ppm∼5% 농도 범위로서 LiF,MgF2,AlF3,CrF3,MnF2,CoF2,MnF2,CoF|2,PbF2,BaF2,CeF3및 TlF로 부터 선택한 적어도 한 성분과 배합시키는 것을 특징으로 하는 광도전막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8202439A 1981-05-29 1982-05-28 광도전막 KR860000815B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56080914A JPS57197876A (en) 1981-05-29 1981-05-29 Photoconductive film
JP???81-80914 1981-05-29
JP80914 1981-05-29

Publications (2)

Publication Number Publication Date
KR840000069A true KR840000069A (ko) 1984-01-30
KR860000815B1 KR860000815B1 (ko) 1986-06-28

Family

ID=13731655

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8202439A KR860000815B1 (ko) 1981-05-29 1982-05-28 광도전막

Country Status (5)

Country Link
US (1) US4463279A (ko)
EP (1) EP0067015B1 (ko)
JP (1) JPS57197876A (ko)
KR (1) KR860000815B1 (ko)
DE (1) DE3273528D1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132541A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 撮像管タ−ゲツト
US4587456A (en) * 1984-01-17 1986-05-06 Hitachi, Ltd. Image pickup tube target
JPH0648616B2 (ja) * 1984-05-21 1994-06-22 株式会社日立製作所 光導電膜
JPS62223951A (ja) * 1986-03-26 1987-10-01 Hitachi Ltd 光導電膜
US4816715A (en) * 1987-07-09 1989-03-28 Hitachi, Ltd. Image pick-up tube target
DE3925483A1 (de) * 1988-08-05 1990-02-08 Fuji Electric Co Ltd Elektrofotografisches aufzeichnungsmaterial
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
CA2184667C (en) * 1996-09-03 2000-06-20 Bradley Trent Polischuk Multilayer plate for x-ray imaging and method of producing same
JP5521030B2 (ja) * 2010-03-05 2014-06-11 健 岡野 太陽電池の製造方法
WO2015198388A1 (ja) * 2014-06-24 2015-12-30 パイオニア株式会社 光電変換膜およびこれを備えた撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391297A (en) * 1965-03-29 1968-07-02 Westinghouse Electric Corp Photoconductive target having arsenicselenium layers of different densities on cryolite layer
US3922579A (en) * 1970-04-22 1975-11-25 Hitachi Ltd Photoconductive target
JPS5240809B2 (ko) * 1972-04-07 1977-10-14
US3890525A (en) * 1972-07-03 1975-06-17 Hitachi Ltd Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer
JPS5246772B2 (ko) * 1973-05-21 1977-11-28
JPS51120611A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Photoconducting film
JPS5488720A (en) * 1977-12-26 1979-07-14 Sony Corp Image pick up tube unit
IT1141339B (it) * 1979-04-25 1986-10-01 Hofsass P Corpo di bobina con un interruttore di protezione dal calore o interruttore di isolamento termico

Also Published As

Publication number Publication date
EP0067015A2 (en) 1982-12-15
US4463279A (en) 1984-07-31
EP0067015A3 (en) 1983-02-09
EP0067015B1 (en) 1986-10-01
DE3273528D1 (en) 1986-11-06
JPS57197876A (en) 1982-12-04
KR860000815B1 (ko) 1986-06-28
JPH0120554B2 (ko) 1989-04-17

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