KR830000497B1 - 고전압 접합 솔리드 스테이트 스위치 - Google Patents

고전압 접합 솔리드 스테이트 스위치 Download PDF

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Publication number
KR830000497B1
KR830000497B1 KR7904541A KR790004541A KR830000497B1 KR 830000497 B1 KR830000497 B1 KR 830000497B1 KR 7904541 A KR7904541 A KR 7904541A KR 790004541 A KR790004541 A KR 790004541A KR 830000497 B1 KR830000497 B1 KR 830000497B1
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KR
South Korea
Prior art keywords
region
cathode
anode
regions
semiconductor
Prior art date
Application number
KR7904541A
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English (en)
Korean (ko)
Inventor
랠프 하트만 아드리안
토마스 머피 버나드
제임스 릴리 테렌스
윌리암 색클 피터
Original Assignee
알. 씨. 윈 터
웨스턴 이레트릭 컴패니, 인코페레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 알. 씨. 윈 터, 웨스턴 이레트릭 컴패니, 인코페레이티드 filed Critical 알. 씨. 윈 터
Application granted granted Critical
Publication of KR830000497B1 publication Critical patent/KR830000497B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
KR7904541A 1978-12-20 1979-12-20 고전압 접합 솔리드 스테이트 스위치 KR830000497B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20
US????971886 1978-12-20

Publications (1)

Publication Number Publication Date
KR830000497B1 true KR830000497B1 (ko) 1983-03-10

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR7904541A KR830000497B1 (ko) 1978-12-20 1979-12-20 고전압 접합 솔리드 스테이트 스위치

Country Status (22)

Country Link
JP (1) JPS55501041A (xx)
KR (1) KR830000497B1 (xx)
AU (1) AU529486B2 (xx)
BE (1) BE880727A (xx)
CA (1) CA1131800A (xx)
CH (1) CH659152A5 (xx)
DD (1) DD147898A5 (xx)
ES (1) ES487065A1 (xx)
FR (1) FR2445028B1 (xx)
GB (1) GB2049282B (xx)
HK (1) HK69284A (xx)
HU (1) HU181028B (xx)
IE (1) IE48719B1 (xx)
IL (1) IL58973A (xx)
IN (1) IN152898B (xx)
IT (1) IT1126602B (xx)
NL (1) NL7920185A (xx)
PL (1) PL220496A1 (xx)
SE (1) SE438577B (xx)
SG (1) SG34884G (xx)
TR (1) TR21213A (xx)
WO (1) WO1980001338A1 (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (xx) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (xx) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (ja) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
IL58973A0 (en) 1980-03-31
IE792473L (en) 1980-06-20
TR21213A (tr) 1984-01-02
AU5386879A (en) 1980-06-26
AU529486B2 (en) 1983-06-09
FR2445028A1 (fr) 1980-07-18
FR2445028B1 (fr) 1985-10-11
NL7920185A (nl) 1980-10-31
CH659152A5 (de) 1986-12-31
GB2049282B (en) 1983-05-18
IN152898B (xx) 1984-04-28
SG34884G (en) 1985-11-15
JPS55501041A (xx) 1980-11-27
GB2049282A (en) 1980-12-17
ES487065A1 (es) 1980-09-16
IT7928205A0 (it) 1979-12-19
DD147898A5 (de) 1981-04-22
IL58973A (en) 1982-07-30
IT1126602B (it) 1986-05-21
CA1131800A (en) 1982-09-14
PL220496A1 (xx) 1980-09-08
HU181028B (en) 1983-05-30
HK69284A (en) 1984-09-14
WO1980001338A1 (en) 1980-06-26
SE438577B (sv) 1985-04-22
IE48719B1 (en) 1985-05-01
SE8005746L (sv) 1980-08-14
BE880727A (fr) 1980-04-16

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