HU181028B - Hig voltage solid state switch with blocking-layer - Google Patents
Hig voltage solid state switch with blocking-layer Download PDFInfo
- Publication number
- HU181028B HU181028B HU79WE612A HUWE000612A HU181028B HU 181028 B HU181028 B HU 181028B HU 79WE612 A HU79WE612 A HU 79WE612A HU WE000612 A HUWE000612 A HU WE000612A HU 181028 B HU181028 B HU 181028B
- Authority
- HU
- Hungary
- Prior art keywords
- region
- cathode
- semiconductor
- type
- substrate
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 101100336452 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GDS1 gene Proteins 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G25/00—Watering gardens, fields, sports grounds or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Environmental Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Water Supply & Treatment (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97188678A | 1978-12-20 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HU181028B true HU181028B (en) | 1983-05-30 |
Family
ID=25518914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU79WE612A HU181028B (en) | 1978-12-20 | 1979-12-10 | Hig voltage solid state switch with blocking-layer |
Country Status (22)
| Country | Link |
|---|---|
| JP (1) | JPS55501041A (xx) |
| KR (1) | KR830000497B1 (xx) |
| AU (1) | AU529486B2 (xx) |
| BE (1) | BE880727A (xx) |
| CA (1) | CA1131800A (xx) |
| CH (1) | CH659152A5 (xx) |
| DD (1) | DD147898A5 (xx) |
| ES (1) | ES487065A1 (xx) |
| FR (1) | FR2445028B1 (xx) |
| GB (1) | GB2049282B (xx) |
| HK (1) | HK69284A (xx) |
| HU (1) | HU181028B (xx) |
| IE (1) | IE48719B1 (xx) |
| IL (1) | IL58973A (xx) |
| IN (1) | IN152898B (xx) |
| IT (1) | IT1126602B (xx) |
| NL (1) | NL7920185A (xx) |
| PL (1) | PL220496A1 (xx) |
| SE (1) | SE438577B (xx) |
| SG (1) | SG34884G (xx) |
| TR (1) | TR21213A (xx) |
| WO (1) | WO1980001338A1 (xx) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933432B1 (xx) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5011389A (xx) * | 1973-05-30 | 1975-02-05 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| JPS5168777A (ja) * | 1974-12-11 | 1976-06-14 | Fujitsu Ltd | Fuseiteikohandotaisochi |
| JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
| GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
-
1979
- 1979-11-28 CA CA340,799A patent/CA1131800A/en not_active Expired
- 1979-12-06 WO PCT/US1979/001044 patent/WO1980001338A1/en unknown
- 1979-12-06 NL NL7920185A patent/NL7920185A/nl not_active Application Discontinuation
- 1979-12-06 CH CH6267/80A patent/CH659152A5/de not_active IP Right Cessation
- 1979-12-06 JP JP50020880A patent/JPS55501041A/ja active Pending
- 1979-12-06 GB GB8025969A patent/GB2049282B/en not_active Expired
- 1979-12-10 HU HU79WE612A patent/HU181028B/hu unknown
- 1979-12-14 DD DD79217695A patent/DD147898A5/de unknown
- 1979-12-14 AU AU53868/79A patent/AU529486B2/en not_active Ceased
- 1979-12-17 IL IL58973A patent/IL58973A/xx unknown
- 1979-12-18 PL PL22049679A patent/PL220496A1/xx unknown
- 1979-12-18 TR TR21213A patent/TR21213A/xx unknown
- 1979-12-18 FR FR7930941A patent/FR2445028B1/fr not_active Expired
- 1979-12-19 IT IT28205/79A patent/IT1126602B/it active
- 1979-12-19 ES ES487065A patent/ES487065A1/es not_active Expired
- 1979-12-19 IE IE2473/79A patent/IE48719B1/en unknown
- 1979-12-19 BE BE0/198640A patent/BE880727A/fr not_active IP Right Cessation
- 1979-12-20 KR KR7904541A patent/KR830000497B1/ko active
-
1980
- 1980-08-14 SE SE8005746A patent/SE438577B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1327/CAL/80A patent/IN152898B/en unknown
-
1984
- 1984-05-04 SG SG348/84A patent/SG34884G/en unknown
- 1984-09-06 HK HK692/84A patent/HK69284A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IE792473L (en) | 1980-06-20 |
| NL7920185A (nl) | 1980-10-31 |
| IT7928205A0 (it) | 1979-12-19 |
| IN152898B (xx) | 1984-04-28 |
| IT1126602B (it) | 1986-05-21 |
| SE8005746L (sv) | 1980-08-14 |
| IE48719B1 (en) | 1985-05-01 |
| SG34884G (en) | 1985-11-15 |
| IL58973A0 (en) | 1980-03-31 |
| IL58973A (en) | 1982-07-30 |
| DD147898A5 (de) | 1981-04-22 |
| JPS55501041A (xx) | 1980-11-27 |
| SE438577B (sv) | 1985-04-22 |
| BE880727A (fr) | 1980-04-16 |
| CH659152A5 (de) | 1986-12-31 |
| GB2049282A (en) | 1980-12-17 |
| AU5386879A (en) | 1980-06-26 |
| GB2049282B (en) | 1983-05-18 |
| PL220496A1 (xx) | 1980-09-08 |
| KR830000497B1 (ko) | 1983-03-10 |
| HK69284A (en) | 1984-09-14 |
| FR2445028A1 (fr) | 1980-07-18 |
| ES487065A1 (es) | 1980-09-16 |
| CA1131800A (en) | 1982-09-14 |
| AU529486B2 (en) | 1983-06-09 |
| WO1980001338A1 (en) | 1980-06-26 |
| TR21213A (tr) | 1984-01-02 |
| FR2445028B1 (fr) | 1985-10-11 |
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