AU529486B2 - Gated diode switch - Google Patents

Gated diode switch

Info

Publication number
AU529486B2
AU529486B2 AU53868/79A AU5386879A AU529486B2 AU 529486 B2 AU529486 B2 AU 529486B2 AU 53868/79 A AU53868/79 A AU 53868/79A AU 5386879 A AU5386879 A AU 5386879A AU 529486 B2 AU529486 B2 AU 529486B2
Authority
AU
Australia
Prior art keywords
diode switch
gated diode
gated
switch
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU53868/79A
Other languages
English (en)
Other versions
AU5386879A (en
Inventor
Adrian Ralph Hartman
Bernard Thomas Murphy
Terence James Riley
Peter William Shackle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of AU5386879A publication Critical patent/AU5386879A/en
Application granted granted Critical
Publication of AU529486B2 publication Critical patent/AU529486B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01GHORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00Watering gardens, fields, sports grounds or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
AU53868/79A 1978-12-20 1979-12-14 Gated diode switch Ceased AU529486B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20
US971886 1978-12-20

Publications (2)

Publication Number Publication Date
AU5386879A AU5386879A (en) 1980-06-26
AU529486B2 true AU529486B2 (en) 1983-06-09

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
AU53868/79A Ceased AU529486B2 (en) 1978-12-20 1979-12-14 Gated diode switch

Country Status (22)

Country Link
JP (1) JPS55501041A (xx)
KR (1) KR830000497B1 (xx)
AU (1) AU529486B2 (xx)
BE (1) BE880727A (xx)
CA (1) CA1131800A (xx)
CH (1) CH659152A5 (xx)
DD (1) DD147898A5 (xx)
ES (1) ES487065A1 (xx)
FR (1) FR2445028B1 (xx)
GB (1) GB2049282B (xx)
HK (1) HK69284A (xx)
HU (1) HU181028B (xx)
IE (1) IE48719B1 (xx)
IL (1) IL58973A (xx)
IN (1) IN152898B (xx)
IT (1) IT1126602B (xx)
NL (1) NL7920185A (xx)
PL (1) PL220496A1 (xx)
SE (1) SE438577B (xx)
SG (1) SG34884G (xx)
TR (1) TR21213A (xx)
WO (1) WO1980001338A1 (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (xx) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5011389A (xx) * 1973-05-30 1975-02-05
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
JPS5168777A (ja) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Also Published As

Publication number Publication date
IL58973A0 (en) 1980-03-31
IE792473L (en) 1980-06-20
TR21213A (tr) 1984-01-02
AU5386879A (en) 1980-06-26
FR2445028A1 (fr) 1980-07-18
FR2445028B1 (fr) 1985-10-11
NL7920185A (nl) 1980-10-31
CH659152A5 (de) 1986-12-31
GB2049282B (en) 1983-05-18
IN152898B (xx) 1984-04-28
SG34884G (en) 1985-11-15
JPS55501041A (xx) 1980-11-27
GB2049282A (en) 1980-12-17
ES487065A1 (es) 1980-09-16
IT7928205A0 (it) 1979-12-19
DD147898A5 (de) 1981-04-22
IL58973A (en) 1982-07-30
IT1126602B (it) 1986-05-21
CA1131800A (en) 1982-09-14
PL220496A1 (xx) 1980-09-08
KR830000497B1 (ko) 1983-03-10
HU181028B (en) 1983-05-30
HK69284A (en) 1984-09-14
WO1980001338A1 (en) 1980-06-26
SE438577B (sv) 1985-04-22
IE48719B1 (en) 1985-05-01
SE8005746L (sv) 1980-08-14
BE880727A (fr) 1980-04-16

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