KR20260002600A - 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성 조성물 - Google Patents

습식 제거 가능한 실리콘 함유 레지스트 하층막 형성 조성물

Info

Publication number
KR20260002600A
KR20260002600A KR1020257026951A KR20257026951A KR20260002600A KR 20260002600 A KR20260002600 A KR 20260002600A KR 1020257026951 A KR1020257026951 A KR 1020257026951A KR 20257026951 A KR20257026951 A KR 20257026951A KR 20260002600 A KR20260002600 A KR 20260002600A
Authority
KR
South Korea
Prior art keywords
group
silicon
underlayer film
optionally substituted
resist underlayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257026951A
Other languages
English (en)
Korean (ko)
Inventor
다이키 사이조
슈헤이 시가키
와타루 시바야마
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20260002600A publication Critical patent/KR20260002600A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020257026951A 2023-04-27 2024-04-26 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성 조성물 Pending KR20260002600A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-073223 2023-04-27
JP2023073223 2023-04-27
PCT/JP2024/016368 WO2024225411A1 (ja) 2023-04-27 2024-04-26 湿式除去可能なシリコン含有レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
KR20260002600A true KR20260002600A (ko) 2026-01-06

Family

ID=93256558

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257026951A Pending KR20260002600A (ko) 2023-04-27 2024-04-26 습식 제거 가능한 실리콘 함유 레지스트 하층막 형성 조성물

Country Status (5)

Country Link
JP (1) JPWO2024225411A1 (https=)
KR (1) KR20260002600A (https=)
CN (1) CN120513432A (https=)
TW (1) TW202507419A (https=)
WO (1) WO2024225411A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016074774A (ja) 2014-10-03 2016-05-12 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
WO2018181989A1 (ja) 2017-03-31 2018-10-04 日産化学株式会社 カルボニル構造を有するシリコン含有レジスト下層膜形成組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5862894B2 (ja) * 2010-09-21 2016-02-16 日産化学工業株式会社 保護された脂肪族アルコールを含有する有機基を有するシリコン含有レジスト下層膜形成組成物
CN111226175A (zh) * 2017-10-25 2020-06-02 日产化学株式会社 使用包含具有铵基的有机基的含硅抗蚀剂下层膜形成用组合物的半导体装置的制造方法
US12585188B2 (en) * 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film
CN118159910A (zh) * 2021-10-28 2024-06-07 日产化学株式会社 含添加剂含硅抗蚀剂下层膜形成组合物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016074774A (ja) 2014-10-03 2016-05-12 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
WO2018181989A1 (ja) 2017-03-31 2018-10-04 日産化学株式会社 カルボニル構造を有するシリコン含有レジスト下層膜形成組成物

Also Published As

Publication number Publication date
TW202507419A (zh) 2025-02-16
WO2024225411A1 (ja) 2024-10-31
JPWO2024225411A1 (https=) 2024-10-31
CN120513432A (zh) 2025-08-19

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)