CN120513432A - 能够湿式去除的含硅抗蚀剂下层膜形成组合物 - Google Patents

能够湿式去除的含硅抗蚀剂下层膜形成组合物

Info

Publication number
CN120513432A
CN120513432A CN202480008548.2A CN202480008548A CN120513432A CN 120513432 A CN120513432 A CN 120513432A CN 202480008548 A CN202480008548 A CN 202480008548A CN 120513432 A CN120513432 A CN 120513432A
Authority
CN
China
Prior art keywords
group
silicon
underlayer film
resist underlayer
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480008548.2A
Other languages
English (en)
Chinese (zh)
Inventor
西条太规
志垣修平
柴山亘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN120513432A publication Critical patent/CN120513432A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN202480008548.2A 2023-04-27 2024-04-26 能够湿式去除的含硅抗蚀剂下层膜形成组合物 Pending CN120513432A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-073223 2023-04-27
JP2023073223 2023-04-27
PCT/JP2024/016368 WO2024225411A1 (ja) 2023-04-27 2024-04-26 湿式除去可能なシリコン含有レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
CN120513432A true CN120513432A (zh) 2025-08-19

Family

ID=93256558

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480008548.2A Pending CN120513432A (zh) 2023-04-27 2024-04-26 能够湿式去除的含硅抗蚀剂下层膜形成组合物

Country Status (5)

Country Link
JP (1) JPWO2024225411A1 (https=)
KR (1) KR20260002600A (https=)
CN (1) CN120513432A (https=)
TW (1) TW202507419A (https=)
WO (1) WO2024225411A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5862894B2 (ja) * 2010-09-21 2016-02-16 日産化学工業株式会社 保護された脂肪族アルコールを含有する有機基を有するシリコン含有レジスト下層膜形成組成物
JP6250514B2 (ja) 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
CN110494807A (zh) 2017-03-31 2019-11-22 日产化学株式会社 具有羰基结构的含有硅的抗蚀剂下层膜形成用组合物
CN111226175A (zh) * 2017-10-25 2020-06-02 日产化学株式会社 使用包含具有铵基的有机基的含硅抗蚀剂下层膜形成用组合物的半导体装置的制造方法
US12585188B2 (en) * 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film
CN118159910A (zh) * 2021-10-28 2024-06-07 日产化学株式会社 含添加剂含硅抗蚀剂下层膜形成组合物

Also Published As

Publication number Publication date
TW202507419A (zh) 2025-02-16
WO2024225411A1 (ja) 2024-10-31
KR20260002600A (ko) 2026-01-06
JPWO2024225411A1 (https=) 2024-10-31

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