TW202507419A - 濕式可去除之含矽抗蝕下層膜形成組合物 - Google Patents

濕式可去除之含矽抗蝕下層膜形成組合物 Download PDF

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Publication number
TW202507419A
TW202507419A TW113115738A TW113115738A TW202507419A TW 202507419 A TW202507419 A TW 202507419A TW 113115738 A TW113115738 A TW 113115738A TW 113115738 A TW113115738 A TW 113115738A TW 202507419 A TW202507419 A TW 202507419A
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TW
Taiwan
Prior art keywords
group
silicon
formula
hydrolyzable silane
underlayer film
Prior art date
Application number
TW113115738A
Other languages
English (en)
Chinese (zh)
Inventor
西條太規
志垣修平
柴山亘
Original Assignee
日商日產化學有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商日產化學有限公司 filed Critical 日商日產化學有限公司
Publication of TW202507419A publication Critical patent/TW202507419A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW113115738A 2023-04-27 2024-04-26 濕式可去除之含矽抗蝕下層膜形成組合物 TW202507419A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-073223 2023-04-27
JP2023073223 2023-04-27

Publications (1)

Publication Number Publication Date
TW202507419A true TW202507419A (zh) 2025-02-16

Family

ID=93256558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113115738A TW202507419A (zh) 2023-04-27 2024-04-26 濕式可去除之含矽抗蝕下層膜形成組合物

Country Status (5)

Country Link
JP (1) JPWO2024225411A1 (https=)
KR (1) KR20260002600A (https=)
CN (1) CN120513432A (https=)
TW (1) TW202507419A (https=)
WO (1) WO2024225411A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5862894B2 (ja) * 2010-09-21 2016-02-16 日産化学工業株式会社 保護された脂肪族アルコールを含有する有機基を有するシリコン含有レジスト下層膜形成組成物
JP6250514B2 (ja) 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ｂｐｓｇ膜形成用組成物、基板、及びパターン形成方法
CN110494807A (zh) 2017-03-31 2019-11-22 日产化学株式会社 具有羰基结构的含有硅的抗蚀剂下层膜形成用组合物
CN111226175A (zh) * 2017-10-25 2020-06-02 日产化学株式会社 使用包含具有铵基的有机基的含硅抗蚀剂下层膜形成用组合物的半导体装置的制造方法
US12585188B2 (en) * 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film
CN118159910A (zh) * 2021-10-28 2024-06-07 日产化学株式会社 含添加剂含硅抗蚀剂下层膜形成组合物

Also Published As

Publication number Publication date
WO2024225411A1 (ja) 2024-10-31
KR20260002600A (ko) 2026-01-06
JPWO2024225411A1 (https=) 2024-10-31
CN120513432A (zh) 2025-08-19

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