KR20250150572A - 에칭 방법 및 플라즈마 처리 장치 - Google Patents
에칭 방법 및 플라즈마 처리 장치Info
- Publication number
- KR20250150572A KR20250150572A KR1020257029718A KR20257029718A KR20250150572A KR 20250150572 A KR20250150572 A KR 20250150572A KR 1020257029718 A KR1020257029718 A KR 1020257029718A KR 20257029718 A KR20257029718 A KR 20257029718A KR 20250150572 A KR20250150572 A KR 20250150572A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- etching
- carbon
- etching method
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H01L21/31122—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H01L21/31144—
-
- H01L21/67069—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2023-020225 | 2023-02-13 | ||
| JP2023020225 | 2023-02-13 | ||
| PCT/JP2024/000496 WO2024171669A1 (ja) | 2023-02-13 | 2024-01-11 | エッチング方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250150572A true KR20250150572A (ko) | 2025-10-20 |
Family
ID=92421503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257029718A Pending KR20250150572A (ko) | 2023-02-13 | 2024-01-11 | 에칭 방법 및 플라즈마 처리 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250357136A1 (https=) |
| JP (2) | JP7774375B2 (https=) |
| KR (1) | KR20250150572A (https=) |
| CN (1) | CN120642031A (https=) |
| TW (1) | TW202503886A (https=) |
| WO (1) | WO2024171669A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018200925A (ja) | 2017-05-25 | 2018-12-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6035117B2 (ja) | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| KR102372892B1 (ko) | 2017-08-10 | 2022-03-10 | 삼성전자주식회사 | 집적회로 소자의 제조 방법 |
| WO2021090516A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| US11443954B2 (en) | 2019-12-10 | 2022-09-13 | Tokyo Electron Limited | Method and apparatus for controlling a shape of a pattern over a substrate |
| CN116034454A (zh) | 2021-04-28 | 2023-04-28 | 东京毅力科创株式会社 | 蚀刻方法 |
| WO2022234640A1 (ja) | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2024
- 2024-01-11 CN CN202480010282.5A patent/CN120642031A/zh active Pending
- 2024-01-11 KR KR1020257029718A patent/KR20250150572A/ko active Pending
- 2024-01-11 WO PCT/JP2024/000496 patent/WO2024171669A1/ja not_active Ceased
- 2024-01-11 JP JP2025500722A patent/JP7774375B2/ja active Active
- 2024-01-30 TW TW113103506A patent/TW202503886A/zh unknown
-
2025
- 2025-08-05 US US19/291,186 patent/US20250357136A1/en active Pending
- 2025-11-07 JP JP2025188436A patent/JP2026009407A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018200925A (ja) | 2017-05-25 | 2018-12-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2026009407A (ja) | 2026-01-19 |
| CN120642031A (zh) | 2025-09-12 |
| WO2024171669A1 (ja) | 2024-08-22 |
| US20250357136A1 (en) | 2025-11-20 |
| JP7774375B2 (ja) | 2025-11-21 |
| TW202503886A (zh) | 2025-01-16 |
| JPWO2024171669A1 (https=) | 2024-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |